component
SI8400AB-B-IS
Public Made by Adomby adom
Skyworks Solutions I2C Isolators, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSI8400AB-B-IS
Skyworks Solutions · I2C Isolators · SOIC-8
SI8400AB-B-IS from Skyworks Solutions, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | AVDD | power_in | Side A power supply terminal; connect to a source of 3.0 to 5.5 V. |
| 2 | ASDA | bidirectional | Side A data (open drain) input or output. |
| 3 | ASCL | bidirectional | Side A clock input or output; open drain I/O for Si8400/01. |
| 4 | AGND | power_in | Side A ground terminal. |
| 5 | BGND | power_in | Side B ground terminal. |
| 6 | BSCL | bidirectional | Side B clock input or output; open drain I/O for Si8400/01. |
| 7 | BSDA | bidirectional | Side B data (open drain) input or output. |
| 8 | BVDD | power_in | Side B power supply terminal; connect to a source of 3.0 to 5.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Skyworks Solutions |
| Package | SOIC-8 |
| Category | Signal Isolation Devices |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature | TSTG | -65 | 150 | °C | 4 | ||
| Ambient Temperature Under Bias | TA | -40 | 125 | °C | 4 | ||
| Supply Voltage (Revision B) | VDD | -0.5 | 6 | V | 4 | ||
| Input Voltage | VI | -0.5 | V | 4 | |||
| Output Voltage | VO | -0.5 | V | 4 | |||
| Side A output current drive (I2C channels) | IO | -15 | 15 | mA | 4 | ||
| Side B output current drive (I2C channels) | IO | -75 | 75 | mA | 4 | ||
| Lead Solder Temperature | 260 | °C | 10 s | 4 | |||
| Maximum Isolation Voltage | 3600 | VRMS | 1 s | 4 | |||
| Maximum Working Insulation Voltage | VIORM | 560 | V peak | 10 | |||
| AVDD current | Idda | 4.2 | 6.3 | mA | All channels = 0 dc | 4 | |
| BVDD current | Iddb | 3.9 | 5.9 | mA | All channels = 0 dc | 4 | |
| AVDD current | Idda | 2.3 | 3.5 | mA | All channels = 1 dc | 4 | |
| BVDD current | Iddb | 1.9 | 2.9 | mA | All channels = 1 dc | 4 | |
| AVDD current | Idda | 3.2 | 4.8 | mA | All channels = 1.7 MHz | 4 | |
| BVDD current | Iddb | 2.9 | 4.4 | mA | All channels = 1.7 MHz | 4 | |
| Logic Input Threshold (Side A) | I2CVT | 450 | 550 | 650 | mV | 5 | |
| Logic Low Output Voltage (Side A) | I2CVOL | 910 | mV | ISDAA = ISCLA = 3.0 mA | 5 | ||
| Logic Low Output Voltage (Side A) | I2CVOL | 825 | mV | ISDAA = ISCLA = 0.5 mA | 5 | ||
| Logic Low Output Voltage (Side A), full temperature range | I2CVOL | 955 | mV | TA = -40 to 125 °C, ISDAA = ISCLA = 3.0 mA (Table 3 note 3) | 5 | ||
| Logic Low Output Voltage (Side A), full temperature range | I2CVOL | 875 | mV | TA = -40 to 125 °C, ISDAA = ISCLA = 0.5 mA (Table 3 note 3) | 5 | ||
| Input/Output Logic Low Level Difference (Side A) | I2CV | 50 | mV | 5 | |||
| Logic Low Input Voltage (Side B) | I2CVIL | 0.8 | V | 5 | |||
| Logic High Input Voltage (Side B) | I2CVIH | 2 | V | 5 | |||
| Logic Low Output Voltage (Side B) | I2CVOL | 400 | mV | ISCLB = 35 mA | 5 | ||
| SCL and SDA Logic High Leakage (Side A) | Isdaa, Iscla | 2 | 10 | µA | SDAA, SCLA = VSSA | 5 | |
| SCL and SDA Logic High Leakage (Side B) | Isdab, Isclb | 2 | 10 | µA | SDAB, SCLB = VSSB | 5 | |
| VDD Undervoltage Threshold | VDDUV+ | 2.15 | 2.3 | 2.5 | V | AVDD, BVDD rising | 8 |
| VDD Negative-going Lockout Hysteresis | VDDH- | 45 | 75 | 95 | mV | AVDD, BVDD falling | 8 |
| Start-up Time | tSTART | 15 | 40 | µs | 8 | ||
| Maximum I2C bus Frequency | Fmax | 1.7 | MHz | 6 | |||
| Propagation Delay, Side A to side B rising (5 V) | Tphab | 25 | 29 | ns | 5 V operation; no bus capacitance, R1 = 1400, R2 = 499 | 6 | |
| Propagation Delay, Side A to side B falling (5 V) | Tplab | 15 | 22 | ns | 5 V operation; no bus capacitance, R1 = 1400, R2 = 499 | 6 | |
| Propagation Delay, Side B to side A rising (5 V) | Tphba | 20 | 30 | ns | 5 V operation; no bus capacitance, R1 = 1400, R2 = 499 | 6 | |
| Propagation Delay, Side B to side A falling (5 V) | Tplba | 9 | 12 | ns | 5 V operation; no bus capacitance, R1 = 1400, R2 = 499 | 6 | |
| Propagation Delay, Side A to side B rising (3.3 V) | Tphab | 28 | 35 | ns | 3.3 V operation; R1 = 806, R2 = 499 | 6 | |
| Propagation Delay, Side A to side B falling (3.3 V) | Tplab | 13 | 18 | ns | 3.3 V operation; R1 = 806, R2 = 499 | 6 | |
| Propagation Delay, Side B to side A rising (3.3 V) | Tphba | 20 | 40 | ns | 3.3 V operation; R1 = 806, R2 = 499 | 6 | |
| Propagation Delay, Side B to side A falling (3.3 V) | Tplba | 10 | 15 | ns | 3.3 V operation; R1 = 806, R2 = 499 | 6 | |
| Pulse Width Distortion, Side A low to Side B low (5 V) | PWDAB | 9 | 15 | ns | 5 V operation; no bus capacitance, R1 = 1400, R2 = 499 | 6 | |
| Pulse Width Distortion, Side B low to Side A low (5 V) | PWDBA | 11 | 20 | ns | 5 V operation; no bus capacitance, R1 = 1400, R2 = 499 | 6 | |
| Pulse Width Distortion, Side A low to Side B low (3.3 V) | PWDAB | 15 | 22 | ns | 3.3 V operation; R1 = 806, R2 = 499 | 6 | |
| Pulse Width Distortion, Side B low to Side A low (3.3 V) | PWDBA | 11 | 30 | ns | 3.3 V operation; R1 = 806, R2 = 499 | 6 | |
| Case Temperature (safety limiting) | TS | 150 | °C | NB SOIC-8 | 10 | ||
| Safety Input Current (NB SOIC-8) | IS | 160 | mA | AVDD, BVDD = 5.5 V, TJ = 150 °C, TA = 25 °C; JA = 140 °C/W (NB SOIC-8) | 10 | ||
| Device Power Dissipation (NB SOIC-8) | PD | 220 | W | 10 | |||
| Supply Voltage (AVDD, BVDD) operating range | VDD | 3 | 5.5 | V | 4 | ||
| Operating Ambient Temperature | TA | -40 | 125 | °C | 4 | ||
| IC Junction-to-Air Thermal Resistance (NB SOIC-8) | θJA | 140 | °C/W | 11 |
CAD (KiCad official)
- Symbol:
SI8400AB-B-IS - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
si8400ab-b-is-etched.step/si8400ab-b-is-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si8400ab-b-is.step/si8400ab-b-is.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Skyworks Solutions datasheet (34 pp, sha256
42eb9c2871c52c24, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).