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SI7940DP-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI7940DP-VB

VBsemi Elec · MOSFETs · DFN5x6-8

SI7940DP-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of N-channel MOSFET 1, which is paired with D1 and G1 in the dual-MOSFET schematic; the device's continuous source (diode) current is rated IS = 2.9 A at TA = 25 °C.
2 G1 input Gate of N-channel MOSFET 1, with gate-source voltage limited to ±20 V under the absolute maximum ratings.
3 S2 passive Source terminal of N-channel MOSFET 2, which is paired with D2 and G2 in the dual-MOSFET schematic; the device's continuous source (diode) current is rated IS = 2.9 A at TA = 25 °C.
4 G2 input Gate of N-channel MOSFET 2, with gate-source voltage limited to ±20 V under the absolute maximum ratings.
5 D1 passive Drain terminal of N-channel MOSFET 1 (shared with pin 6), with drain-source voltage rated VDS = 30 V.
6 D1 passive Drain terminal of N-channel MOSFET 1 (shared with pin 5), with drain-source voltage rated VDS = 30 V.
7 D2 passive Drain terminal of N-channel MOSFET 2 (shared with pin 8), with drain-source voltage rated VDS = 30 V.
8 D2 passive Drain terminal of N-channel MOSFET 2 (shared with pin 7), with drain-source voltage rated VDS = 30 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 22 A TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current ID 15 A TJ = 150 °C, TA = 70 °C 1
Pulsed Drain Current IDM 50 A 1
Continuous Source Current (Diode Conduction) IS 2.9 A 1
Maximum Power Dissipation PD 3.5 W TA = 25 °C 1
Maximum Power Dissipation PD 2.2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient (10 s) RthJA 26 35 °C/W t = 10 s 1
Maximum Junction-to-Ambient (Steady State) RthJA 60 85 °C/W Steady State 1
Maximum Junction-to-Case (Drain) RthJC 3.9 5.5 °C/W Steady State 1
Gate Threshold Voltage VGS(th) 0.8 2.4 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.018 Ω VGS = 10 V, ID = 10 A 2
Drain-Source On-State Resistance RDS(on) 0.024 Ω VGS = 4.5 V, ID = 8.5 A 2
Diode Forward Voltage VSD 0.75 1.2 V IS = 2.9 A, VGS = 0 V 2
Total Gate Charge Qg 13 20 nC VDS = 15 V, VGS = 10 V, ID = 10 A 2
Turn-On Delay Time td(on) 8 16 ns VDD = 15 V, RL = 15, ID 1 A, VGEN = 10 V, Rg = 6 2
Rise Time tr 10 20 ns VDD = 15 V, RL = 15, ID 1 A, VGEN = 10 V, Rg = 6 2
Turn-Off Delay Time td(off) 21 40 ns VDD = 15 V, RL = 15, ID 1 A, VGEN = 10 V, Rg = 6 2
Fall Time tf 10 20 ns VDD = 15 V, RL = 15, ID 1 A, VGEN = 10 V, Rg = 6 2
Source-Drain Reverse Recovery Time trr 40 80 ns IF = 2.9 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: SI7940DP-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: si7940dp-vb-etched.step / si7940dp-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si7940dp-vb.step / si7940dp-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 4bb419bc91d1bed2, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF