component
Si7850DP-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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Si7850DP-MS
MSKSEMI · MOSFETs · DFN5x6-8L
Si7850DP-MS from MSKSEMI, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, carrying up to 30 A continuous (ID at TC=25°C) and sitting at the low side of the 60 V VDS rating. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, carrying up to 30 A continuous (ID at TC=25°C) and sitting at the low side of the 60 V VDS rating. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, carrying up to 30 A continuous (ID at TC=25°C) and sitting at the low side of the 60 V VDS rating. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, rated for ±20 V gate-source voltage with a threshold of 1.2 to 2.5 V and RDS(ON) specified at VGS=10 V and 4.5 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID@TC=25℃ | 30 | A | TC=25℃, VGS @ 10V | 2 | ||
| Continuous Drain Current | ID@TC=100℃ | 15 | A | TC=100℃, VGS @ 10V | 2 | ||
| Pulsed Drain Current | IDM | 46 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 25.5 | mJ | 2 | |||
| Avalanche Current | IAS | 22.6 | A | 2 | |||
| Total Power Dissipation | PD@TC=25℃ | 34.7 | W | TC=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | 2 | |||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 3 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 20 | 25 | mΩ | VGS=10V, ID=15A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 24 | 20 | mΩ | VGS=4.5V, ID=10A | 3 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS, ID=250uA | 3 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Continuous Source Current | IS | 30 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | 46 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
Si7850DP-MS - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
si7850dp-ms-etched.step/si7850dp-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si7850dp-ms.step/si7850dp-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
857cabef938d5b59, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# Si7850DP-MS
**MSKSEMI** · MOSFETs · DFN5x6-8L
Si7850DP-MS from MSKSEMI, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, carrying up to 30 A continuous (ID at TC=25°C) and sitting at the low side of the 60 V VDS rating. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, carrying up to 30 A continuous (ID at TC=25°C) and sitting at the low side of the 60 V VDS rating. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, carrying up to 30 A continuous (ID at TC=25°C) and sitting at the low side of the 60 V VDS rating. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, rated for ±20 V gate-source voltage with a threshold of 1.2 to 2.5 V and RDS(ON) specified at VGS=10 V and 4.5 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID@TC=25℃ | | | 30 | A | TC=25℃, VGS @ 10V | 2 |
| Continuous Drain Current | ID@TC=100℃ | | | 15 | A | TC=100℃, VGS @ 10V | 2 |
| Pulsed Drain Current | IDM | | | 46 | A | | 2 |
| Single Pulse Avalanche Energy | EAS | | | 25.5 | mJ | | 2 |
| Avalanche Current | IAS | | | 22.6 | A | | 2 |
| Total Power Dissipation | PD@TC=25℃ | | | 34.7 | W | TC=25℃ | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance Junction-ambient | RθJA | | | 62 | ℃/W | | 2 |
| Thermal Resistance Junction-Case | RθJC | | | 3.6 | ℃/W | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250uA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 20 | 25 | mΩ | VGS=10V, ID=15A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 24 | 20 | mΩ | VGS=4.5V, ID=10A | 3 |
| Gate Threshold Voltage | VGS(th) | 1.2 | | 2.5 | V | VGS=VDS, ID=250uA | 3 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 3 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Continuous Source Current | IS | | | 30 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current | ISM | | | 46 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 |
## CAD (KiCad official)
- Symbol: `Si7850DP-MS`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `si7850dp-ms-etched.step` / `si7850dp-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si7850dp-ms.step` / `si7850dp-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](docs/si7850dp-ms-datasheet.pdf) (7 pp, sha256 `857cabef938d5b59`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si7850dp-ms-datasheet.pdf)