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SI7635DP-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI7635DP-T1-GE3-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
SI7635DP-T1-GE3-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and VGS of ±12V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and VGS of ±12V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and VGS of ±12V. |
| 4 | G | input | Gate terminal of the P-channel MOSFET; the datasheet specifies VGS absolute maximum of ±12V and VGS(th) of -0.4V to -1.0V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and continuous ID of -80A at TC=25℃. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and continuous ID of -80A at TC=25℃. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and continuous ID of -80A at TC=25℃. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and continuous ID of -80A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -18 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | printed as ±12 V | 1 | |
| Continuous Drain Current | ID@TC=25℃ | -80 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -360 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 41.67 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 3 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -18 | V | VGS=0V, ID=-250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -30 | uA | VDS=-16V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -500 | 500 | nA | VGS=±12V, VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.5 | 3 | mΩ | VGS=-4.5V, ID=-20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.3 | 4.5 | mΩ | VGS=-2.5V, ID=-20A | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | -1 | V | VGS=VDS, ID=-250uA | 2 |
| Total Gate Charge | Qg | 149 | 225 | nC | VDS=-16V, VGS=-4.5V, ID=-5A | 2 | |
| Gate-Source Charge | Qgs | 14.4 | 22 | nC | 2 | ||
| Gate-Drain Charge | Qgd | 42.8 | 65 | nC | 2 | ||
| Turn-On Delay Time | Td(on) | 21.2 | 42 | nS | VDD=-15V, VGS=-4.5V, RG=25, ID=-1A | 2 | |
| Rise Time | Tr | 20.6 | 40 | nS | 2 | ||
| Turn-Off Delay Time | Td(off) | 26 | 52 | nS | 2 | ||
| Fall Time | Tf | 400 | 600 | nS | 2 | ||
| Input Capacitance | Ciss | 12000 | 16000 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 | |
| Output Capacitance | Coss | 1670 | 2500 | pF | 2 | ||
| Reverse Transfer Capacitance | Crss | 730 | 1100 | pF | 2 | ||
| Continuous Source Current | IS | -85 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -190 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
SI7635DP-T1-GE3-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
si7635dp-t1-ge3-hxy-etched.step/si7635dp-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si7635dp-t1-ge3-hxy.step/si7635dp-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
e5e16a120b46fb23, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI7635DP-T1-GE3-HXY
**HXY MOSFET** · MOSFETs · DFN5x6-8L
SI7635DP-T1-GE3-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and VGS of ±12V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and VGS of ±12V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and VGS of ±12V. |
| 4 | G | input | Gate terminal of the P-channel MOSFET; the datasheet specifies VGS absolute maximum of ±12V and VGS(th) of -0.4V to -1.0V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and continuous ID of -80A at TC=25℃. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and continuous ID of -80A at TC=25℃. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and continuous ID of -80A at TC=25℃. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, rated with the device absolute maximum VDS of -18V and continuous ID of -80A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -18 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | printed as ±12 V | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | -80 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | -360 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 41.67 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 3 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -18 | | | V | VGS=0V, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -30 | uA | VDS=-16V, VGS=0V, TJ=125℃ | 2 |
| Gate-Source Leakage Current | IGSS | -500 | | 500 | nA | VGS=±12V, VDS=0V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 2.5 | 3 | mΩ | VGS=-4.5V, ID=-20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 3.3 | 4.5 | mΩ | VGS=-2.5V, ID=-20A | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | -1 | V | VGS=VDS, ID=-250uA | 2 |
| Total Gate Charge | Qg | | 149 | 225 | nC | VDS=-16V, VGS=-4.5V, ID=-5A | 2 |
| Gate-Source Charge | Qgs | | 14.4 | 22 | nC | | 2 |
| Gate-Drain Charge | Qgd | | 42.8 | 65 | nC | | 2 |
| Turn-On Delay Time | Td(on) | | 21.2 | 42 | nS | VDD=-15V, VGS=-4.5V, RG=25, ID=-1A | 2 |
| Rise Time | Tr | | 20.6 | 40 | nS | | 2 |
| Turn-Off Delay Time | Td(off) | | 26 | 52 | nS | | 2 |
| Fall Time | Tf | | 400 | 600 | nS | | 2 |
| Input Capacitance | Ciss | | 12000 | 16000 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 |
| Output Capacitance | Coss | | 1670 | 2500 | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 730 | 1100 | pF | | 2 |
| Continuous Source Current | IS | | | -85 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -190 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `SI7635DP-T1-GE3-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `si7635dp-t1-ge3-hxy-etched.step` / `si7635dp-t1-ge3-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si7635dp-t1-ge3-hxy.step` / `si7635dp-t1-ge3-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/si7635dp-t1-ge3-hxy-datasheet.pdf) (6 pp, sha256 `e5e16a120b46fb23`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si7635dp-t1-ge3-hxy-datasheet.pdf)