component
SI7386DP-T1-E3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| si7386dp-t1-e3-hxy-etched.glb | 17d ago |
| si7386dp-t1-e3-hxy-etched.step | 17d ago |
| si7386dp-t1-e3-hxy-hero.glb | 17d ago |
| si7386dp-t1-e3-hxy-hero.overlay.json | 17d ago |
| si7386dp-t1-e3-hxy.glb | 17d ago |
| si7386dp-t1-e3-hxy.kicad_mod | 17d ago |
| si7386dp-t1-e3-hxy.kicad_sym | 17d ago |
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| si7386dp-t1-e3-hxy.step | 17d ago |
SI7386DP-T1-E3-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
SI7386DP-T1-E3-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, with body diode forward drop VSD of 1.2 V max at ISD=20A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with body diode forward drop VSD of 1.2 V max at ISD=20A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with body diode forward drop VSD of 1.2 V max at ISD=20A. |
| 4 | G | input | Gate terminal, rated for ±20 V gate-source voltage with a threshold of 1.0 V min to 2.5 V max at 250 µA. |
| 5 | D | passive | Drain terminal, rated for 30 V drain-source voltage and 80 A continuous current at TC=25°C. |
| 6 | D | passive | Drain terminal, rated for 30 V drain-source voltage and 80 A continuous current at TC=25°C. |
| 7 | D | passive | Drain terminal, rated for 30 V drain-source voltage and 80 A continuous current at TC=25°C. |
| 8 | D | passive | Drain terminal, rated for 30 V drain-source voltage and 80 A continuous current at TC=25°C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25°C | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 80 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | 45 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 280 | A | TC=25°C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 56 | mJ | TC=25°C | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 37 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 30 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.1 | μA | VDS=30V,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (Tj=125℃) | IDSS | 100 | μA | VDS=30V,VGS=0V, Tj=125℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 6 | mΩ | VGS=10V, ID=20A | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 5.4 | 8 | mΩ | VGS=4.5V, ID=16A | 2 | |
| Forward on voltage | VSD | 0.8 | 1.2 | V | ISD=20A,VGS=0V | 2 | |
| Input Capacitance | Ciss | 1930 | pF | VDS=15V,VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 310 | pF | VDS=15V,VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 260 | pF | VDS=15V,VGS=0V, f=1MHz | 2 | ||
| Gate Resistance | Rg | 0.85 | Ω | f=1MHz | 2 | ||
| Total Gate Charge | Qg | 38 | nC | VDS=15V,ID=20A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 5.1 | nC | VDS=15V,ID=20A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 12 | nC | VDS=15V,ID=20A, VGS=10V | 2 | ||
| Turn-on Delay Time | td(on) | 8.5 | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 | ||
| Turn-on Rise Time | tr | 9 | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 | ||
| Turn-Off Delay Time | td(off) | 31 | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 | ||
| Turn-Off Fall Time | tf | 9 | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 | ||
| Reverse Recovery Time | trr | 16 | nS | Tj=25℃,Isd=20A, VGS=0V, di/dt=500A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 42 | nC | Tj=25℃,Isd=20A, VGS=0V, di/dt=500A/μs | 2 |
CAD (KiCad official)
- Symbol:
SI7386DP-T1-E3-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
si7386dp-t1-e3-hxy-etched.step/si7386dp-t1-e3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si7386dp-t1-e3-hxy.step/si7386dp-t1-e3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
11a2ba6973b1fcef, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).