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SI6544BDQ-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI6544BDQ-T1-GE3-VB
VBsemi Elec · MOSFETs · TSSOP-8
SI6544BDQ-T1-GE3-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of the N-channel MOSFET (30V, 22mΩ at VGS=10V, 6.2A continuous). |
| 2 | S1 | passive | Source of the N-channel MOSFET. |
| 3 | S1 | passive | Source of the N-channel MOSFET, tied to the other S1 pin. |
| 4 | G1 | input | Gate of the N-channel MOSFET, rated VGS ±20V with threshold 1 to 3V. |
| 5 | G2 | input | Gate of the P-channel MOSFET, rated VGS ±20V with threshold -1 to -3V. |
| 6 | S2 | passive | Source of the P-channel MOSFET. |
| 7 | S2 | passive | Source of the P-channel MOSFET, tied to the other S2 pin. |
| 8 | D2 | passive | Drain of the P-channel MOSFET (-30V, 45mΩ at VGS=-10V, -5.0A continuous). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 30 | V | N-channel | 1 | ||
| Drain-Source Voltage (P-channel) | VDS | -30 | V | P-channel | 1 | ||
| Gate-Source Voltage (N-channel) | VGS | 20 | V | N-channel | 1 | ||
| Gate-Source Voltage (P-channel) | VGS | 20 | V | P-channel | 1 | ||
| Continuous Drain Current (N-channel) | ID@TA=25℃ | 6.2 | A | TA=25℃, N-channel | 1 | ||
| Continuous Drain Current (P-channel) | ID@TA=25℃ | -5 | A | TA=25℃, P-channel | 1 | ||
| Continuous Drain Current (N-channel) | ID@TA=70℃ | 5 | A | TA=70℃, N-channel | 1 | ||
| Continuous Drain Current (P-channel) | ID@TA=70℃ | -4 | A | TA=70℃, P-channel | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 20 | A | N-channel | 1 | ||
| Pulsed Drain Current (P-channel) | IDM | -18 | A | P-channel | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 90 | ℃/W | Junction-ambient, note 3 | 1 | ||
| Maximum Thermal Resistance, Junction-ambient (minimum copper pad) | Rthj-a | 208 | ℃/W | Mounted on minimum copper pad, note 3 | 3 | ||
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current (N-channel) | IDSS | 1 | uA | VDS=24V, VGS=0V | 2 | ||
| Gate-Source Leakage (N-channel) | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Total Gate Charge (N-channel) | Qg | 7 | 11 | nC | ID=6A | 2 | |
| Forward On Voltage (N-channel) | VSD | 1.2 | V | IS=1.2A, VGS=0V | 2 | ||
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -30 | V | VGS=0V, ID=-250uA | 3 | ||
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250uA | 3 | |
| Drain-Source Leakage Current (P-channel) | IDSS | -1 | uA | VDS=-24V, VGS=0V | 3 | ||
| Gate-Source Leakage (P-channel) | IGSS | 100 | nA | VGS=+20V, VDS=0V | 3 | ||
| Total Gate Charge (P-channel) | Qg | 14.4 | 23 | nC | 3 | ||
| Forward On Voltage (P-channel) | VSD | -1.2 | V | IS=-1.2A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
SI6544BDQ-T1-GE3-VB - Footprint:
Package_SO:TSSOP-8_4.4x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
si6544bdq-t1-ge3-vb-etched.step/si6544bdq-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si6544bdq-t1-ge3-vb.step/si6544bdq-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
fe2c40baa3bf9e4c, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI6544BDQ-T1-GE3-VB
**VBsemi Elec** · MOSFETs · TSSOP-8
SI6544BDQ-T1-GE3-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of the N-channel MOSFET (30V, 22mΩ at VGS=10V, 6.2A continuous). |
| 2 | S1 | passive | Source of the N-channel MOSFET. |
| 3 | S1 | passive | Source of the N-channel MOSFET, tied to the other S1 pin. |
| 4 | G1 | input | Gate of the N-channel MOSFET, rated VGS ±20V with threshold 1 to 3V. |
| 5 | G2 | input | Gate of the P-channel MOSFET, rated VGS ±20V with threshold -1 to -3V. |
| 6 | S2 | passive | Source of the P-channel MOSFET. |
| 7 | S2 | passive | Source of the P-channel MOSFET, tied to the other S2 pin. |
| 8 | D2 | passive | Drain of the P-channel MOSFET (-30V, 45mΩ at VGS=-10V, -5.0A continuous). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | | | 30 | V | N-channel | 1 |
| Drain-Source Voltage (P-channel) | VDS | -30 | | | V | P-channel | 1 |
| Gate-Source Voltage (N-channel) | VGS | | | 20 | V | N-channel | 1 |
| Gate-Source Voltage (P-channel) | VGS | | | 20 | V | P-channel | 1 |
| Continuous Drain Current (N-channel) | ID@TA=25℃ | | | 6.2 | A | TA=25℃, N-channel | 1 |
| Continuous Drain Current (P-channel) | ID@TA=25℃ | -5 | | | A | TA=25℃, P-channel | 1 |
| Continuous Drain Current (N-channel) | ID@TA=70℃ | | | 5 | A | TA=70℃, N-channel | 1 |
| Continuous Drain Current (P-channel) | ID@TA=70℃ | -4 | | | A | TA=70℃, P-channel | 1 |
| Pulsed Drain Current (N-channel) | IDM | | | 20 | A | N-channel | 1 |
| Pulsed Drain Current (P-channel) | IDM | -18 | | | A | P-channel | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 90 | ℃/W | Junction-ambient, note 3 | 1 |
| Maximum Thermal Resistance, Junction-ambient (minimum copper pad) | Rthj-a | | | 208 | ℃/W | Mounted on minimum copper pad, note 3 | 3 |
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | | 3 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-channel) | IDSS | | | 1 | uA | VDS=24V, VGS=0V | 2 |
| Gate-Source Leakage (N-channel) | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Total Gate Charge (N-channel) | Qg | | 7 | 11 | nC | ID=6A | 2 |
| Forward On Voltage (N-channel) | VSD | | | 1.2 | V | IS=1.2A, VGS=0V | 2 |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 3 |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | | -3 | V | VDS=VGS, ID=-250uA | 3 |
| Drain-Source Leakage Current (P-channel) | IDSS | | | -1 | uA | VDS=-24V, VGS=0V | 3 |
| Gate-Source Leakage (P-channel) | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 3 |
| Total Gate Charge (P-channel) | Qg | | 14.4 | 23 | nC | | 3 |
| Forward On Voltage (P-channel) | VSD | | | -1.2 | V | IS=-1.2A, VGS=0V | 3 |
## CAD (KiCad official)
- Symbol: `SI6544BDQ-T1-GE3-VB`
- Footprint: `Package_SO:TSSOP-8_4.4x3mm_P0.65mm`
- 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files: `si6544bdq-t1-ge3-vb-etched.step` / `si6544bdq-t1-ge3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si6544bdq-t1-ge3-vb.step` / `si6544bdq-t1-ge3-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/si6544bdq-t1-ge3-vb-datasheet.pdf) (9 pp, sha256 `fe2c40baa3bf9e4c`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si6544bdq-t1-ge3-vb-datasheet.pdf)