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Ray Publish 0.1.0 4467ed9 6h ago

SI6544BDQ-T1-GE3-VB

VBsemi Elec · MOSFETs · TSSOP-8

SI6544BDQ-T1-GE3-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D1 passive Drain of the N-channel MOSFET (30V, 22mΩ at VGS=10V, 6.2A continuous).
2 S1 passive Source of the N-channel MOSFET.
3 S1 passive Source of the N-channel MOSFET, tied to the other S1 pin.
4 G1 input Gate of the N-channel MOSFET, rated VGS ±20V with threshold 1 to 3V.
5 G2 input Gate of the P-channel MOSFET, rated VGS ±20V with threshold -1 to -3V.
6 S2 passive Source of the P-channel MOSFET.
7 S2 passive Source of the P-channel MOSFET, tied to the other S2 pin.
8 D2 passive Drain of the P-channel MOSFET (-30V, 45mΩ at VGS=-10V, -5.0A continuous).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSSOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDS 30 V N-channel 1
Drain-Source Voltage (P-channel) VDS -30 V P-channel 1
Gate-Source Voltage (N-channel) VGS 20 V N-channel 1
Gate-Source Voltage (P-channel) VGS 20 V P-channel 1
Continuous Drain Current (N-channel) ID@TA=25℃ 6.2 A TA=25℃, N-channel 1
Continuous Drain Current (P-channel) ID@TA=25℃ -5 A TA=25℃, P-channel 1
Continuous Drain Current (N-channel) ID@TA=70℃ 5 A TA=70℃, N-channel 1
Continuous Drain Current (P-channel) ID@TA=70℃ -4 A TA=70℃, P-channel 1
Pulsed Drain Current (N-channel) IDM 20 A N-channel 1
Pulsed Drain Current (P-channel) IDM -18 A P-channel 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 90 ℃/W Junction-ambient, note 3 1
Maximum Thermal Resistance, Junction-ambient (minimum copper pad) Rthj-a 208 ℃/W Mounted on minimum copper pad, note 3 3
Drain-Source Breakdown Voltage (N-channel) BVDSS 30 V VGS=0V, ID=250uA 2
Gate Threshold Voltage (N-channel) VGS(th) 1 3 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current (N-channel) IDSS 1 uA VDS=24V, VGS=0V 2
Gate-Source Leakage (N-channel) IGSS 100 nA VGS=+20V, VDS=0V 2
Total Gate Charge (N-channel) Qg 7 11 nC ID=6A 2
Forward On Voltage (N-channel) VSD 1.2 V IS=1.2A, VGS=0V 2
Drain-Source Breakdown Voltage (P-channel) BVDSS -30 V VGS=0V, ID=-250uA 3
Gate Threshold Voltage (P-channel) VGS(th) -1 -3 V VDS=VGS, ID=-250uA 3
Drain-Source Leakage Current (P-channel) IDSS -1 uA VDS=-24V, VGS=0V 3
Gate-Source Leakage (P-channel) IGSS 100 nA VGS=+20V, VDS=0V 3
Total Gate Charge (P-channel) Qg 14.4 23 nC 3
Forward On Voltage (P-channel) VSD -1.2 V IS=-1.2A, VGS=0V 3

CAD (KiCad official)

  • Symbol: SI6544BDQ-T1-GE3-VB
  • Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: si6544bdq-t1-ge3-vb-etched.step / si6544bdq-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si6544bdq-t1-ge3-vb.step / si6544bdq-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 fe2c40baa3bf9e4c, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF