component
SI5618-TP
Public Made by Adomby adom
MCC(Micro Commercial Components) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
| si5618-tp-etched.glb | 16d ago |
| si5618-tp-etched.step | 16d ago |
| si5618-tp-hero.glb | 16d ago |
| si5618-tp-hero.overlay.json | 16d ago |
| si5618-tp.glb | 16d ago |
| si5618-tp.kicad_mod | 16d ago |
| si5618-tp.kicad_sym | 16d ago |
| si5618-tp.lbr | 16d ago |
| si5618-tp.step | 16d ago |
SI5618-TP
MCC(Micro Commercial Components) · MOSFETs · SOT-23
SI5618-TP from MCC(Micro Commercial Components), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate control terminal; the datasheet limits gate-source voltage to ±20 V. |
| 2 | SOURCE | passive | Source terminal; the datasheet gives no pin-specific limit, so the device ratings apply (VDS -60 V, VGS ±20 V). |
| 3 | DRAIN | passive | Drain terminal; the drain-source voltage is rated -60 V and continuous drain current is -1.9 A when surface mounted on a 1 in² pad (t≤10 s). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC(Micro Commercial Components) |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TA=25°C) | ID | -1.9 | A | TA=25°C; Note 2: surface mounted on 1 in² pad, t≤10 sec | 1 | ||
| Continuous Drain Current (TA=100°C) | ID | -1.2 | A | TA=100°C; Note 2: surface mounted on 1 in² pad, t≤10 sec | 1 | ||
| Pulsed Drain Current | IDM | -7.6 | A | Note 3: pulse width ≤300µs, duty cycle ≤2% | 1 | ||
| Total Power Dissipation | PD | 0.83 | W | 1 | |||
| Operating Junction Temperature Range | -55 | 150 | °C | 1 | |||
| Storage Temperature Range | -55 | 150 | °C | 1 | |||
| Thermal Resistance, Junction to Ambient | 150 | °C/W | Junction to ambient | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS=0V, ID=-250µA | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-48V, VGS=0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -1 | -2 | -3 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-Source On-Resistance (VGS=-10V) | RDS(on) | 125 | 150 | mΩ | VGS=-10V, ID=-1.5A | 2 | |
| Drain-Source On-Resistance (VGS=-4.5V) | RDS(on) | 165 | 200 | mΩ | VGS=-4.5V, ID=-1A | 2 | |
| Diode Forward Voltage | VSD | -0.8 | -1.4 | V | VGS=0V, IS=-1A | 2 | |
| Continuous Body Diode Current | IS | -1.9 | A | 2 |
CAD (KiCad official)
- Symbol:
SI5618-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si5618-tp-etched.step/si5618-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si5618-tp.step/si5618-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC(Micro Commercial Components) datasheet (4 pp, sha256
9e803c609dd22b8b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).