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SI4963DY-T1-E3-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi4963dy-t1-e3-vbfactory-2.0.0extractor-text

Verified SI4963DY-T1-E3-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SI4963DY-T1-E3-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-voblv1gs/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ si4963dy-t1-e3-vb.kicad_sym✓ si4963dy-t1-e3-vb.kicad_mod✓ si4963dy-t1-e3-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 5d ago
viewers si4963dy-t1-e3-vb: viewers · Ray 5d ago
package.json Publish 0.1.0 · Ray 5d ago
page.json Set visibility: public · Ray 5d ago
README.md Publish 0.1.0 · Ray 5d ago
si4963dy-t1-e3-vb-etched.glb Publish 0.1.0 · Ray 5d ago
si4963dy-t1-e3-vb-etched.step si4963dy-t1-e3-vb: factory component page (tier=lcsc) · Ray 5d ago
si4963dy-t1-e3-vb-hero.glb si4963dy-t1-e3-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 5d ago
si4963dy-t1-e3-vb-hero.overlay.json Publish 0.1.0 · Ray 5d ago
si4963dy-t1-e3-vb.glb Publish 0.1.0 · Ray 5d ago
si4963dy-t1-e3-vb.kicad_mod Publish 0.1.0 · Ray 5d ago
si4963dy-t1-e3-vb.kicad_sym Publish 0.1.0 · Ray 5d ago
si4963dy-t1-e3-vb.lbr Publish 0.1.0 · Ray 5d ago
si4963dy-t1-e3-vb.step Publish 0.1.0 · Ray 5d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 5d ago

SI4963DY-T1-E3-VB

VBsemi Elec · MOSFETs · SO-8

SI4963DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1, with VDS rated at -20 V and continuous drain current of -8.9 A (10 s) for the device.
2 G1 input Gate of P-channel MOSFET 1, with gate-source voltage limited to ±12 V and threshold of -0.4 V to -1.0 V.
3 S2 passive Source of P-channel MOSFET 2, with VDS rated at -20 V and continuous drain current of -8.9 A (10 s) for the device.
4 G2 input Gate of P-channel MOSFET 2, with gate-source voltage limited to ±12 V and threshold of -0.4 V to -1.0 V.
5 D2 passive Drain of P-channel MOSFET 2, with RDS(on) of 0.018 Ω at VGS = -4.5 V and pulsed drain current up to -30 A.
6 D2 passive Drain of P-channel MOSFET 2, with RDS(on) of 0.018 Ω at VGS = -4.5 V and pulsed drain current up to -30 A.
7 D1 passive Drain of P-channel MOSFET 1, with RDS(on) of 0.018 Ω at VGS = -4.5 V and pulsed drain current up to -30 A.
8 D1 passive Drain of P-channel MOSFET 1, with RDS(on) of 0.018 Ω at VGS = -4.5 V and pulsed drain current up to -30 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -350 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS = -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.018 Ω VGS = -4.5 V, ID = -8.9 A 2
Drain-Source On-State Resistance RDS(on) 0.022 Ω VGS = -2.5 V, ID = -8.1 A 2
Drain-Source On-State Resistance RDS(on) 0.03 Ω VGS = -1.8 V, ID = -3.6 A 2
Diode Forward Voltage VSD -0.7 -1.2 V IS = -1.7 A, VGS = 0 V 2
Total Gate Charge Qg 34.5 52 nC VDS = -10 V, VGS = -4.5 V, ID = -8.9 A 2
Turn-On Delay Time td(on) 25 40 ns VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Rise Time tr 46 70 ns VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 230 345 ns VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Fall Time tf 155 235 ns VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 128 200 ns IF = -1.7 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS -20 V TA = 25 °C 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C 1
Continuous Drain Current, 10 s ID -8.9 A TJ = 150 °C, TA = 25 °C, 10 s 1
Continuous Drain Current, Steady State ID -6.7 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current, 10 s ID -7.1 A TJ = 150 °C, TA = 70 °C, 10 s 1
Continuous Drain Current, Steady State ID -5.4 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM -30 A TA = 25 °C 1
Continuous Source Current, 10 s IS -1.7 A Diode conduction, 10 s 1
Continuous Source Current, Steady State IS -0.9 A Diode conduction, steady state 1
Maximum Power Dissipation, 10 s PD 2 W TA = 25 °C, 10 s 1
Maximum Power Dissipation, Steady State PD 1.1 W TA = 25 °C, steady state 1
Maximum Power Dissipation, 10 s PD 1.3 W TA = 70 °C, 10 s 1
Maximum Power Dissipation, Steady State PD 0.7 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance, t ≤ 10 s RthJA 46 62.5 °C/W t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance, Steady State RthJA 80 110 °C/W Steady state 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 24 32 °C/W Steady state 1
Forward Transconductance gfs 26 S VDS = -10 V, ID = -8.9 A 2
Gate-Source Charge Qgs 5.1 nC VDS = -10 V, VGS = -4.5 V, ID = -8.9 A 2
Gate-Drain Charge Qgd 9.6 nC VDS = -10 V, VGS = -4.5 V, ID = -8.9 A 2
Gate Resistance Rg 9 Ω 2

CAD (KiCad official)

  • Symbol: SI4963DY-T1-E3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4963dy-t1-e3-vb-etched.step / si4963dy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4963dy-t1-e3-vb.step / si4963dy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 379311bd30153911, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF