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SI4948BEY-T1-E3

Public Made by Adom

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4948BEY-T1-E3

Vishay Intertech · MOSFETs · SO-8

SI4948BEY-T1-E3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; gate-source voltage limit is ±20 V.
2 G1 input Gate of P-channel MOSFET 1; VGS maximum ±20 V, threshold -1 to -3 V at ID = -250 µA.
3 S2 passive Source of P-channel MOSFET 2; gate-source voltage limit is ±20 V.
4 G2 input Gate of P-channel MOSFET 2; VGS maximum ±20 V, threshold -1 to -3 V at ID = -250 µA.
5 D2 passive Drain of P-channel MOSFET 2; VDS rated -60 V, continuous ID -3.1 A (10 s, TA = 25 °C).
6 D2 passive Drain of P-channel MOSFET 2, tied with pin 5; VDS rated -60 V, continuous ID -3.1 A (10 s, TA = 25 °C).
7 D1 passive Drain of P-channel MOSFET 1; VDS rated -60 V, continuous ID -3.1 A (10 s, TA = 25 °C).
8 D1 passive Drain of P-channel MOSFET 1, tied with pin 7; VDS rated -60 V, continuous ID -3.1 A (10 s, TA = 25 °C).

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 60 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) -25 A VDS = - 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.1 0.12 Ω VGS = - 10 V, ID = - 3.1 A 2
Drain-Source On-State Resistance RDS(on) 0.126 0.15 Ω VGS = - 4.5 V, ID = - 0.2 A 2
Diode Forward Voltage VSD -0.8 -1.2 V IS = - 2 A, VGS = 0 V 2
Total Gate Charge Qg 14.5 22 nC VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A 2
Turn-On Delay Time td(on) 10 15 ns VDD = - 30 V, RL = 30 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 2
Rise Time tr 15 22 ns VDD = - 30 V, RL = 30 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 50 75 ns VDD = - 30 V, RL = 30 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 2
Fall Time tf 35 55 ns VDD = - 30 V, RL = 30 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 30 50 ns IF = - 2 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS -60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current, 10 s ID -3.1 A TJ = 150 °C, TA = 25 °C, 10 s 1
Continuous Drain Current, Steady State ID -2.4 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current, 10 s ID -2.6 A TJ = 150 °C, TA = 70 °C, 10 s 1
Continuous Drain Current, Steady State ID -2 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM -25 A 10 µs pulse width 1
Continuous Source Current, 10 s IS -2 A Diode conduction, 10 s 1
Continuous Source Current, Steady State IS -1.1 A Diode conduction, steady state 1
Avalanche Current IAS 15 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 11 mJ L = 0.1 mH 1
Maximum Power Dissipation, 10 s PD 2.4 W TA = 25 °C, 10 s 1
Maximum Power Dissipation, Steady State PD 1.4 W TA = 25 °C, steady state 1
Maximum Power Dissipation, 10 s PD 1.7 W TA = 70 °C, 10 s 1
Maximum Power Dissipation, Steady State PD 0.95 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance, t ≤ 10 s RthJA 53 62.5 °C/W t ≤ 10 s, surface mounted 1" x 1" FR4 1
Junction-to-Ambient Thermal Resistance, Steady State RthJA 85 110 °C/W Steady state, surface mounted 1" x 1" FR4 1
Junction-to-Foot Thermal Resistance RthJF 30 37 °C/W Steady state 1
Forward Transconductance gfs 8.5 S VDS = - 15 V, ID = - 3.1 A 2
Gate-Source Charge Qgs 2.2 nC VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A 2
Gate-Drain Charge Qgd 3.7 nC VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A 2
Gate Resistance Rg 14 Ω f = 1 MHz 2

CAD (KiCad official)

  • Symbol: SI4948BEY-T1-E3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4948bey-t1-e3-etched.step / si4948bey-t1-e3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4948bey-t1-e3.step / si4948bey-t1-e3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 0ccf3701395e1fd9, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF