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SI4943DY-T1-E3-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4943DY-T1-E3-VB

VBsemi Elec · MOSFETs · SO-8

SI4943DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the channel-1 P-channel MOSFET; the datasheet gives a diode continuous source current of -1.7 A at TA = 25 °C (10 s).
2 G1 input Gate of the channel-1 MOSFET; the gate-source voltage is rated at ±12 V.
3 S2 passive Source of the channel-2 P-channel MOSFET; the datasheet gives a diode continuous source current of -1.7 A at TA = 25 °C (10 s).
4 G2 input Gate of the channel-2 MOSFET; the gate-source voltage is rated at ±12 V.
5 D2 passive Drain of the channel-2 MOSFET; the drain-source voltage is rated at -20 V, with continuous drain current of -8.9 A at TA = 25 °C (10 s).
6 D2 passive Drain of the channel-2 MOSFET (second drain lead); the drain-source voltage is rated at -20 V, with continuous drain current of -8.9 A at TA = 25 °C (10 s).
7 D1 passive Drain of the channel-1 MOSFET; the drain-source voltage is rated at -20 V, with continuous drain current of -8.9 A at TA = 25 °C (10 s).
8 D1 passive Drain of the channel-1 MOSFET (second drain lead); the drain-source voltage is rated at -20 V, with continuous drain current of -8.9 A at TA = 25 °C (10 s).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -8.9 A TJ = 150 °C, TA = 25 °C, t ≤ 10 s 1
Continuous Drain Current ID -6.7 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current ID -7.1 A TJ = 150 °C, TA = 70 °C, t ≤ 10 s 1
Continuous Drain Current ID -5.4 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM -30 A 1
Continuous Source Current (Diode Conduction) IS -1.7 A TA = 25 °C, t ≤ 10 s 1
Continuous Source Current (Diode Conduction) IS -0.9 A TA = 25 °C, steady state 1
Maximum Power Dissipation PD 2 W TA = 25 °C, t ≤ 10 s 1
Maximum Power Dissipation PD 1.1 W TA = 25 °C, steady state 1
Maximum Power Dissipation PD 1.3 W TA = 70 °C, t ≤ 10 s 1
Maximum Power Dissipation PD 0.7 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 46 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 80 110 °C/W Steady state 1
Maximum Junction-to-Foot (Drain) RthJF 24 32 °C/W Steady state 1
Gate Threshold Voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -350 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS = -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.018 Ω VGS = -4.5 V, ID = -8.9 A 2
Drain-Source On-State Resistance RDS(on) 0.022 Ω VGS = -2.5 V, ID = -8.1 A 2
Drain-Source On-State Resistance RDS(on) 0.03 Ω VGS = -1.8 V, ID = -3.6 A 2
Diode Forward Voltage VSD -0.7 -1.2 V IS = -1.7 A, VGS = 0 V 2
Total Gate Charge Qg 34.5 52 nC VDS = -10 V, VGS = -4.5 V, ID = -8.9 A 2
Turn-On Delay Time td(on) 25 40 ns VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Rise Time tr 46 70 ns VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 230 345 ns VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Fall Time tf 155 235 ns VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 128 200 ns IF = -1.7 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: SI4943DY-T1-E3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4943dy-t1-e3-vb-etched.step / si4943dy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4943dy-t1-e3-vb.step / si4943dy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 57ef92318c538491, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF