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SI4942DY-T1-E3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI4942DY-T1-E3-VB
VBsemi Elec · MOSFETs · SO-8
SI4942DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1, rated for 30 V drain-source with continuous drain current of 8.5 A at TC = 25 °C. |
| 2 | G1 | input | Gate of N-channel MOSFET 1, with a gate-source voltage limit of ±20 V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2, rated for 30 V drain-source with continuous drain current of 8.5 A at TC = 25 °C. |
| 4 | G2 | input | Gate of N-channel MOSFET 2, with a gate-source voltage limit of ±20 V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2, with a maximum drain-source voltage of 30 V and RDS(on) of 0.016 Ω at VGS = 10 V. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2, with a maximum drain-source voltage of 30 V and RDS(on) of 0.016 Ω at VGS = 10 V. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1, with a maximum drain-source voltage of 30 V and RDS(on) of 0.016 Ω at VGS = 10 V. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1, with a maximum drain-source voltage of 30 V and RDS(on) of 0.016 Ω at VGS = 10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
SI4942DY-T1-E3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4942dy-t1-e3-vb-etched.step/si4942dy-t1-e3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4942dy-t1-e3-vb.step/si4942dy-t1-e3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
1aa2a05d0b6fc646, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI4942DY-T1-E3-VB
**VBsemi Elec** · MOSFETs · SO-8
SI4942DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1, rated for 30 V drain-source with continuous drain current of 8.5 A at TC = 25 °C. |
| 2 | G1 | input | Gate of N-channel MOSFET 1, with a gate-source voltage limit of ±20 V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2, rated for 30 V drain-source with continuous drain current of 8.5 A at TC = 25 °C. |
| 4 | G2 | input | Gate of N-channel MOSFET 2, with a gate-source voltage limit of ±20 V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2, with a maximum drain-source voltage of 30 V and RDS(on) of 0.016 Ω at VGS = 10 V. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2, with a maximum drain-source voltage of 30 V and RDS(on) of 0.016 Ω at VGS = 10 V. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1, with a maximum drain-source voltage of 30 V and RDS(on) of 0.016 Ω at VGS = 10 V. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1, with a maximum drain-source voltage of 30 V and RDS(on) of 0.016 Ω at VGS = 10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## CAD (KiCad official)
- Symbol: `SI4942DY-T1-E3-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `si4942dy-t1-e3-vb-etched.step` / `si4942dy-t1-e3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si4942dy-t1-e3-vb.step` / `si4942dy-t1-e3-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/si4942dy-t1-e3-vb-datasheet.pdf) (9 pp, sha256 `1aa2a05d0b6fc646`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si4942dy-t1-e3-vb-datasheet.pdf)