main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17h ago
viewers si4936cdy-t1-ge3-hxy: viewers · Ray 17h ago
package.json Publish 0.1.0 · Ray 17h ago
page.json Set visibility: public · Ray 17h ago
README.md Publish 0.1.0 · Ray 17h ago
si4936cdy-t1-ge3-hxy-etched.glb Publish 0.1.0 · Ray 17h ago
si4936cdy-t1-ge3-hxy-etched.step si4936cdy-t1-ge3-hxy: factory component page (tier=lcsc) · Ray 17h ago
si4936cdy-t1-ge3-hxy-hero.glb si4936cdy-t1-ge3-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 17h ago
si4936cdy-t1-ge3-hxy-hero.overlay.json Publish 0.1.0 · Ray 17h ago
si4936cdy-t1-ge3-hxy.glb Publish 0.1.0 · Ray 17h ago
si4936cdy-t1-ge3-hxy.kicad_mod Publish 0.1.0 · Ray 17h ago
si4936cdy-t1-ge3-hxy.kicad_sym Publish 0.1.0 · Ray 17h ago
si4936cdy-t1-ge3-hxy.lbr Publish 0.1.0 · Ray 17h ago
si4936cdy-t1-ge3-hxy.step Publish 0.1.0 · Ray 17h ago

SI4936CDY-T1-GE3-HXY

HXY MOSFET · MOSFETs · SOP-8

SI4936CDY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of N-channel MOSFET 1, part of a dual device rated VDS 30V and ID 6A at TA=25°C.
2 G1 input Gate of N-channel MOSFET 1, with gate-source voltage rated VGS ±20V and threshold VGS(th) of 1.2 to 2.4 V.
3 S2 passive Source terminal of N-channel MOSFET 2, part of a dual device rated VDS 30V and ID 6A at TA=25°C.
4 G2 input Gate of N-channel MOSFET 2, with gate-source voltage rated VGS ±20V and threshold VGS(th) of 1.2 to 2.4 V.
5 D2 passive Drain terminal of N-channel MOSFET 2, rated VDS 30V with continuous drain current 6A at TA=25°C.
6 D2 passive Drain terminal of N-channel MOSFET 2, rated VDS 30V with continuous drain current 6A at TA=25°C.
7 D1 passive Drain terminal of N-channel MOSFET 1, rated VDS 30V with continuous drain current 6A at TA=25°C.
8 D1 passive Drain terminal of N-channel MOSFET 1, rated VDS 30V with continuous drain current 6A at TA=25°C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID@TA=25℃ 6 A VGS @ 4.5V 1
Drain Current ID@TA=70℃ 5 A VGS @ 4.5V 1
Pulsed Drain Current IDM 30 A 1
Total Power Dissipation PD@TA=25℃ 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V ID=-250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA TJ=55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.4 V VDS=VGS ID=250µA 2
On state drain current ID(ON) 30 A VGS=10V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 25 30 mΩ VGS=10V, ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 40 48 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 33 42 mΩ VGS=4.5V, ID=5A 2
Forward Transconductance gFS 15 S VDS=5V, ID=6A 2
Diode Forward Voltage VSD 0.76 1 V IS=1A,VGS=0V 2
Maximum Body-Diode Continuous Current IS 2.5 A 2
Input Capacitance Ciss 255 310 pF VGS=0V, VDS=15V, f=1MHz 2
Output Capacitance Coss 45 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse Transfer Capacitance Crss 35 50 pF VGS=0V, VDS=15V, f=1MHz 2
Gate resistance Rg 1.6 3.25 4.9 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg(10V) 5.2 6.3 nC VGS=10V, VDS=15V, ID=6A 2
Total Gate Charge Qg(4.5V) 2.55 3.2 nC VGS=4.5V, VDS=15V, ID=6A 2
Gate Source Charge Qgs 0.85 nC 2
Gate Drain Charge Qgd 1.3 nC 2
Turn-On DelayTime tD(on) 4.5 ns VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 2
Turn-On Rise Time tr 2.5 ns VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 2
Turn-Off DelayTime tD(off) 14.5 ns VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 3.5 ns VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Time trr 8.5 ns IF=6A, dI/dt=100A/µs 2
Body Diode Reverse Recovery Charge Qrr 2.2 nC IF=6A, dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: SI4936CDY-T1-GE3-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4936cdy-t1-ge3-hxy-etched.step / si4936cdy-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4936cdy-t1-ge3-hxy.step / si4936cdy-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 3a5666221fb3040f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF