# SI4925DDY-T1-GE3-HXY

**HXY MOSFET** · MOSFETs · SOP-8

SI4925DDY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; the device is rated for a drain-source voltage of -30 V and continuous drain current of -8.5 A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage is rated ±20 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; the device is rated for a drain-source voltage of -30 V and continuous drain current of -8.5 A. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage is rated ±20 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; pulsed drain current is rated -26 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2; pulsed drain current is rated -26 A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; pulsed drain current is rated -26 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1; pulsed drain current is rated -26 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V | TA=25°C unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA=25°C unless otherwise noted | 1 |
| Drain Current-Continuous | ID | -8.5 |  |  | A | TA=25°C unless otherwise noted | 1 |
| Drain Current-Pulsed (Note 1) | IDM | -26 |  |  | A | TA=25°C unless otherwise noted | 1 |
| Maximum Power Dissipation | PD |  |  | 1.5 | W | TA=25°C unless otherwise noted | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA |  |  | 85 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 18 | mΩ | VGS=-10V, ID=-6A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 28 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 |  | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | -6.5 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -26 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | -0.022 |  | V/℃ | Reference to 25℃, ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | 4.6 |  | mV/℃ |  | 2 |
| Forward Transconductance | gfs |  | 17 |  | S | VDS=-5V, ID=-6A | 2 |
| Gate Resistance | Rg |  | 13 |  |  | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (-4.5V) | Qg |  | 12.6 |  | nC | VDS=-15V, VGS=-4.5V, ID=-6A | 2 |
| Gate-Source Charge | Qgs |  | 4.8 |  | nC | VDS=-15V, VGS=-4.5V, ID=-6A | 2 |
| Gate-Drain Charge | Qgd |  | 4.8 |  | nC | VDS=-15V, VGS=-4.5V, ID=-6A | 2 |
| Turn-On Delay Time | Td(on) |  | 4.6 |  | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-6A | 2 |
| Rise Time | Tr |  | 14.8 |  | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-6A | 2 |
| Turn-Off Delay Time | Td(off) |  | 41 |  | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-6A | 2 |
| Fall Time | Tf |  | 19.6 |  | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-6A | 2 |
| Input Capacitance | Ciss |  | 1345 |  | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 194 |  | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 158 |  | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Reverse Recovery Time | trr |  | 16.3 |  | nS | IF=-6A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  | 5.9 |  | nC | IF=-6A, dI/dt=100A/µs, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `SI4925DDY-T1-GE3-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `si4925ddy-t1-ge3-hxy-etched.step` / `si4925ddy-t1-ge3-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si4925ddy-t1-ge3-hxy.step` / `si4925ddy-t1-ge3-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/si4925ddy-t1-ge3-hxy-datasheet.pdf) (6 pp, sha256 `6c587712202af582`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si4925ddy-t1-ge3-hxy-datasheet.pdf)