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SI4909DY-T1-GE3

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4909DY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4909DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1 (dual P-channel 40 V, D-S MOSFET; VDS = -40 V absolute maximum).
2 G1 input Gate of P-channel MOSFET 1; gate-source voltage is limited to ±20 V per the absolute maximum ratings.
3 S2 passive Source of P-channel MOSFET 2 (dual P-channel 40 V, D-S MOSFET; VDS = -40 V absolute maximum).
4 G2 input Gate of P-channel MOSFET 2; gate-source voltage is limited to ±20 V per the absolute maximum ratings.
5 D2 passive Drain of P-channel MOSFET 2; drain-source voltage is limited to -40 V per the absolute maximum ratings.
6 D2 passive Drain of P-channel MOSFET 2 (internally common with pin 5); drain-source voltage is limited to -40 V.
7 D1 passive Drain of P-channel MOSFET 1; drain-source voltage is limited to -40 V per the absolute maximum ratings.
8 D1 passive Drain of P-channel MOSFET 1 (internally common with pin 7); drain-source voltage is limited to -40 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -6.5 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -6.4 A TJ = 150 °C, TA = 25 °C (notes a, b) 1
Continuous Drain Current ID -5.1 A TJ = 150 °C, TA = 70 °C (notes a, b) 1
Pulsed Drain Current IDM -30 A note e (limited by package) 1
Continuous Source-Drain Diode Current IS -2.6 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1.6 A TA = 25 °C (notes a, b) 1
Avalanche Current IAS -20 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 20 mJ 1
Maximum Power Dissipation PD 3.2 W TC = 25 °C 1
Maximum Power Dissipation PD 2.1 W TC = 70 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C (notes a, b) 1
Maximum Power Dissipation PD 1.28 W TA = 70 °C (notes a, b) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 47 62.5 °C/W t 10 s (note a, b) 1
Maximum Junction-to-Ambient RthJA 110 °C/W steady state (note c) 1
Maximum Junction-to-Foot Steady State RthJF 29 38 °C/W steady state 1
Drain-Source Breakdown Voltage VDS -40 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1.2 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS -10 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.021 0.027 Ω VGS = -10 V, ID = -8 A 2
Drain-Source On-State Resistance RDS(on) 0.027 0.034 Ω VGS = -4.5 V, ID = -5 A 2
Gate Resistance Rg 1.5 6 12 Ω f = 1 MHz 2
Total Gate Charge Qg 41.5 63 nC VDS = -20 V, VGS = -10 V, ID = -10 A 2
Total Gate Charge Qg 21.7 33 nC VDS = -20 V, VGS = -4.5 V, ID = -10 A 2
Turn-On Delay Time td(on) 10 20 ns VDD = -20 V, RL = 2 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 9 18 ns VDD = -20 V, RL = 2 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 50 90 ns VDD = -20 V, RL = 2 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 13 26 ns VDD = -20 V, RL = 2 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 42 75 ns VDD = -20 V, RL = 2 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 40 70 ns VDD = -20 V, RL = 2 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 40 70 ns VDD = -20 V, RL = 2 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 18 35 ns VDD = -20 V, RL = 2 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -2.6 A TC = 25 °C 2
Pulse Diode Forward Current ISM -30 A 2
Body Diode Voltage VSD -0.75 -1.2 V IS = -2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 41 80 ns IF = -2 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 32 65 nC IF = -2 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4909DY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4909dy-t1-ge3-etched.step / si4909dy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4909dy-t1-ge3.step / si4909dy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 7e1ba507d06d2f07, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF