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SI4848BDY-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI4848BDY-T1-GE3

Vishay Intertech · MOSFETs · SOIC-8

SI4848BDY-T1-GE3 from Vishay Intertech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, tied with pins 2 and 3.
2 S passive Source terminal of the N-channel MOSFET, tied with pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET, tied with pins 1 and 2.
4 G input Gate terminal with VGS rated ±20 V and a threshold voltage of 2 V to 4 V at ID = 250 µA.
5 D passive Drain terminal rated for VDS of 150 V, tied with pins 6, 7 and 8.
6 D passive Drain terminal rated for VDS of 150 V, tied with pins 5, 7 and 8.
7 D passive Drain terminal rated for VDS of 150 V, tied with pins 5, 6 and 8.
8 D passive Drain terminal rated for VDS of 150 V, tied with pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 150 V TA = 25 °C 1
Gate-source voltage VGS -20 20 V TA = 25 °C 1
Continuous drain current ID 5 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID 4 A TJ = 150 °C, TC = 70 °C 1
Continuous drain current ID 3.7 A TJ = 150 °C, TA = 25 °C, a, b 1
Continuous drain current ID 3 A TJ = 150 °C, TA = 70 °C, a, b 1
Pulsed drain current IDM 15 A t = 100 μs 1
Continuous source-drain diode current IS 3.8 A TC = 25 °C 1
Continuous source-drain diode current IS 2.1 A TA = 25 °C, a, b 1
Single pulse avalanche current IAS 4 A L = 0.1 mH 1
Single pulse avalanche energy EAS 0.8 mJ L = 0.1 mH 1
Maximum power dissipation PD 4.5 W TC = 25 °C 1
Maximum power dissipation PD 2.9 W TC = 70 °C 1
Maximum power dissipation PD 2.5 W TA = 25 °C, a, b 1
Maximum power dissipation PD 1.6 W TA = 70 °C, a, b 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Junction-to-ambient thermal resistance RthJA 43 50 °C/W t ≤ 10 s, a, c 1
Junction-to-foot (drain) thermal resistance RthJF 22 28 °C/W Steady state 1
Drain-source breakdown voltage VDS 150 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 150 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 10 μA VDS = 150 V, VGS = 0 V, TJ = 70 °C 2
On-state drain current ID(on) 10 A VDS ≤ 10 V, VGS = 10 V 2
Drain-source on-state resistance RDS(on) 0.0742 0.089 Ω VGS = 10 V, ID = 3.7 A 2
Drain-source on-state resistance RDS(on) 0.084 0.11 Ω VGS = 6 V, ID = 3.0 A 2
Total gate charge Qg 6 9 nC VDS = 75 V, VGS = 10 V, ID = 3.7 A 2
Total gate charge Qg 3.7 5.6 nC VDS = 75 V, VGS = 6 V, ID = 3.7 A 2
Gate resistance Rg 0.5 2.5 5 Ω f = 1 MHz 2
Turn-on delay time td(on) 8 16 ns VDD = 75 V, RL = 25 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω 2
Rise time tr 6 12 ns VDD = 75 V, RL = 25 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 12 24 ns VDD = 75 V, RL = 25 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω 2
Fall time tf 35 53 ns VDD = 75 V, RL = 25 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-on delay time td(on) 10 20 ns VDD = 75 V, RL = 25 Ω, ID ≅ 3 A, VGEN = 6 V, Rg = 1 Ω 2
Rise time tr 8 16 ns VDD = 75 V, RL = 25 Ω, ID ≅ 3 A, VGEN = 6 V, Rg = 1 Ω 2
Turn-off delay time td(off) 15 30 ns VDD = 75 V, RL = 25 Ω, ID ≅ 3 A, VGEN = 6 V, Rg = 1 Ω 2
Fall time tf 32 48 ns VDD = 75 V, RL = 25 Ω, ID ≅ 3 A, VGEN = 6 V, Rg = 1 Ω 2
Continuous source-drain diode current IS 2.1 A TC = 25 °C 2
Pulse diode forward current ISM 15 A 2
Body diode voltage VSD 0.85 1.2 V IS = 3 A, VGS = 0 V 2
Body diode reverse recovery time trr 238 357 ns IF = 3 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 1895 2843 nC IF = 3 A, di/dt = 100 A/μs, TJ = 25 °C 2
VDS temperature coefficient ΔVDS/TJ 92 mV/°C ID = 250 μA 2
VGS(th) temperature coefficient ΔVGS(th)/TJ -5.2 mV/°C ID = 250 μA 2
Forward transconductance gfs 5 S VDS = 10 V, ID = 3.7 A 2
Input capacitance Ciss 400 pF VDS = 75 V, VGS = 0 V, f = 1 MHz 2
Output capacitance Coss 41 pF VDS = 75 V, VGS = 0 V, f = 1 MHz 2
Reverse transfer capacitance Crss 3 pF VDS = 75 V, VGS = 0 V, f = 1 MHz 2
Gate-source charge Qgs 2.2 nC VDS = 75 V, VGS = 6 V, ID = 3.7 A 2
Gate-drain charge Qgd 0.8 nC VDS = 75 V, VGS = 6 V, ID = 3.7 A 2

CAD (KiCad official)

  • Symbol: SI4848BDY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: si4848bdy-t1-ge3-etched.step / si4848bdy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4848bdy-t1-ge3.step / si4848bdy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 a7258a2153934cac, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF