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SI4840BDY-T1-GE3

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4840BDY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4840BDY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet rates the continuous source-drain diode current at 5 A (TC = 25 °C).
2 S passive Source terminal of the N-channel MOSFET; the datasheet rates the continuous source-drain diode current at 5 A (TC = 25 °C).
3 S passive Source terminal of the N-channel MOSFET; the datasheet rates the continuous source-drain diode current at 5 A (TC = 25 °C).
4 G input Gate terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage at ±20 V and the gate-source threshold voltage VGS(th) at 1 V to 3 V.
5 D passive Drain terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage VDS at 40 V.
6 D passive Drain terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage VDS at 40 V.
7 D passive Drain terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage VDS at 40 V.
8 D passive Drain terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage VDS at 40 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 40 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 19 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID 15 A TJ = 150 °C, TC = 70 °C 1
Continuous drain current ID 12.4 A TJ = 150 °C, TA = 25 °C, notes a, b 1
Continuous drain current ID 9.9 A TJ = 150 °C, TA = 70 °C, notes a, b 1
Pulsed drain current IDM 50 A 1
Avalanche current IAS 15 A L = 0.1 mH 1
Avalanche energy EAS 11 mJ 1
Continuous source-drain diode current IS 5 A TC = 25 °C 1
Continuous source-drain diode current IS 2.1 A TA = 25 °C, notes a, b 1
Maximum power dissipation PD 6 W TC = 25 °C 1
Maximum power dissipation PD 3.8 W TC = 70 °C 1
Maximum power dissipation PD 2.5 W TA = 25 °C, notes a, b 1
Maximum power dissipation PD 1.6 W TA = 70 °C, notes a, b 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 37 50 °C/W t ≤ 10 s, notes a, c 1
Maximum junction-to-foot (drain) RthJF 17 21 °C/W Steady state 1
Maximum junction-to-ambient, steady state (note c) RthJA 85 °C/W Steady state, note c 1
Drain-source breakdown voltage VDS 40 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 1 3 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 40 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 5 μA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current ID(on) 50 A VDS ≥ 5 V, VGS = 10 V 2
Drain-source on-state resistance RDS(on) 0.0074 0.009 Ω VGS = 10 V, ID = 12.4 A 2
Drain-source on-state resistance RDS(on) 0.0095 0.012 Ω VGS = 4.5 V, ID = 10.8 A 2
Total gate charge Qg 33 50 nC VDS = 20 V, VGS = 10 V, ID = 12.4 A 2
Total gate charge Qg 15 23 nC VDS = 20 V, VGS = 4.5 V, ID = 12.4 A 2
Gate resistance Rg 1.4 2.1 Ω f = 1 MHz 2
Turn-on delay time td(on) 25 40 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise time tr 12 20 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 25 40 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall time tf 10 15 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-on delay time td(on) 10 15 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise time tr 15 25 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 30 45 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous source-drain diode current IS 30 A TC = 25 °C 2
Pulse diode forward current ISM 50 A 2
Body diode voltage VSD 0.8 1.2 V IS = 10 A, VGS = 0 V 2
Body diode reverse recovery time trr 30 60 ns IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 26 52 nC IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4840BDY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4840bdy-t1-ge3-etched.step / si4840bdy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4840bdy-t1-ge3.step / si4840bdy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 f42d90f7b66cedb9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF