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SI4840BDY-T1-E3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI4840BDY-T1-E3-VB

VBsemi Elec · MOSFETs · SO-8

SI4840BDY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, one of three source pins tied together on the SO-8 package, with the source-drain body diode rated for continuous current IS per the datasheet.
2 S passive Source terminal of the N-channel MOSFET, one of three source pins tied together on the SO-8 package, with the source-drain body diode rated for continuous current IS per the datasheet.
3 S passive Source terminal of the N-channel MOSFET, one of three source pins tied together on the SO-8 package, with the source-drain body diode rated for continuous current IS per the datasheet.
4 G input Gate terminal of the MOSFET, with a maximum gate-source voltage of ±20 V (VGS) per the absolute maximum ratings.
5 D passive Drain terminal of the MOSFET, one of four drain pins tied together on the SO-8 package, with a drain-source voltage rating of 40 V (VDS).
6 D passive Drain terminal of the MOSFET, one of four drain pins tied together on the SO-8 package, with a drain-source voltage rating of 40 V (VDS).
7 D passive Drain terminal of the MOSFET, one of four drain pins tied together on the SO-8 package, with a drain-source voltage rating of 40 V (VDS).
8 D passive Drain terminal of the MOSFET, one of four drain pins tied together on the SO-8 package, with a drain-source voltage rating of 40 V (VDS).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 10.4 A TA = 25 °C 1
Continuous Drain Current ID 8.8 A TA = 70 °C 1
Pulsed Drain Current IDM 50 A 1
Avalanche Current IAS 15 A 1
Avalanche Energy EAS 11 mJ L = 0.1 mH 1
Continuous Source-Drain Diode Current IS 2.1 A 1
Maximum Power Dissipation PD 6 W TC = 25 °C 1
Maximum Power Dissipation PD 3.8 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient Thermal Resistance RthJA 37 50 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient Thermal Resistance RthJA 85 °C/W Steady State (note c) 1
Maximum Junction-to-Foot (Drain) Thermal Resistance RthJF 17 21 °C/W 1
Drain-Source Breakdown Voltage VDS 40 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage Temperature Coefficient ΔVDS/ΔTJ 40 mV/°C ID = 250 µA 2
Gate-Source Threshold Voltage Temperature Coefficient ΔVGS(th)/ΔTJ -6 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 50 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.014 Ω VGS = 10 V, ID = 12.4 A 2
Drain-Source On-State Resistance RDS(on) 0.016 Ω VGS = 4.5 V, ID = 10.8 A 2
Forward Transconductance gfs 56 S VDS = 15 V, ID = 12.4 A 2
Input Capacitance Ciss 2000 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 260 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 150 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 33 50 nC VDS = 10 V, VGS = 10 V, ID = 12.4 A 2
Total Gate Charge Qg 15 23 nC VDS = 10 V, VGS = 4.5 V, ID = 12.4 A 2
Gate-Source Charge Qgs 6.7 nC 2
Gate-Drain Charge Qgd 5.1 nC 2
Gate Resistance Rg 1.4 2.1 Ω f = 1 MHz 2
Turn-On Delay Time (VGEN = 4.5 V) td(on) 25 40 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time (VGEN = 4.5 V) tr 12 20 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 4.5 V) td(off) 25 40 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time (VGEN = 4.5 V) tf 10 15 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN = 10 V) td(on) 10 15 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time (VGEN = 10 V) tr 15 25 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 10 V) td(off) 30 45 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGEN = 10 V) tf 10 15 ns VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 30 A TC = 25 °C 2
Pulse Diode Forward Current ISM 50 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 10 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 30 60 ns IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 26 52 nC IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Fall Time ta 17.5 ns 2
Reverse Recovery Rise Time tb 12.5 ns 2

CAD (KiCad official)

  • Symbol: SI4840BDY-T1-E3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4840bdy-t1-e3-vb-etched.step / si4840bdy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4840bdy-t1-e3-vb.step / si4840bdy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 7d4b2aa3576603ff, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF