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SI4835DDY-T1-E3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI4835DDY-T1-E3-VB

VBsemi Elec · MOSFETs · SO-8

SI4835DDY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (pins 1-3 are source), with the drain-source voltage rated at -30 V.
2 S passive Source of the P-channel MOSFET (pins 1-3 are source), with the drain-source voltage rated at -30 V.
3 S passive Source of the P-channel MOSFET (pins 1-3 are source), with the drain-source voltage rated at -30 V.
4 G input Gate of the P-channel MOSFET, with a gate-source voltage limit of ±20 V and a threshold of -1.0 to -3.0 V.
5 D passive Drain of the P-channel MOSFET (pins 5-8 are drain), with a continuous drain current of -11.6 A at TC = 25 °C.
6 D passive Drain of the P-channel MOSFET (pins 5-8 are drain), with a continuous drain current of -11.6 A at TC = 25 °C.
7 D passive Drain of the P-channel MOSFET (pins 5-8 are drain), with a continuous drain current of -11.6 A at TC = 25 °C.
8 D passive Drain of the P-channel MOSFET (pins 5-8 are drain), with a continuous drain current of -11.6 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID -11.6 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -10.5 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -8.7 A TJ = 150 °C, TA = 25 °C, a, b 1
Continuous Drain Current ID -7.7 A TJ = 150 °C, TA = 70 °C, a, b 1
Pulsed Drain Current IDM -40 A 1
Continuous Source-Drain Diode Current IS -4.6 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2 A TA = 25 °C, a, b 1
Avalanche Current IAS -20 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 20 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 5.6 W TC = 25 °C 1
Maximum Power Dissipation PD 3.6 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C, a, b 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C, a, b 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 39 50 °C/W t ≤ 10 s 1
Junction-to-Foot Thermal Resistance RthJF 18 22 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 25 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS ≥ - 10 V, VGS = - 10 V 2
Gate Resistance Rg 0.3 1.3 2.5 Ω f = 1 MHz 2
Total Gate Charge Qg 43 65 nC VDS = - 15 V, VGS = - 10 V, ID = - 10 A 2
Total Gate Charge Qg 22 33 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 2
Turn-On Delay Time td(on) 11 22 ns VDD = - 15 V, RL = 3 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 13 25 ns VDD = - 15 V, RL = 3 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 32 50 ns VDD = - 15 V, RL = 3 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = - 15 V, RL = 3 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 44 70 ns VDD = - 15 V, RL = 3 Ω, ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 100 160 ns VDD = - 15 V, RL = 3 Ω, ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 28 50 ns VDD = - 15 V, RL = 3 Ω, ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 15 30 ns VDD = - 15 V, RL = 3 Ω, ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -4.6 A TC = 25 °C 2
Pulse Diode Forward Current ISM -50 A 2
Body Diode Voltage VSD -0.75 -1.2 V IS = - 2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 28 45 ns IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 20 40 nC IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source On-State Resistance RDS(on) 0.011 Ω VGS = - 10 V, ID = - 10 A 2
Drain-Source On-State Resistance RDS(on) 0.012 Ω VGS = - 4.5 V, ID = - 7 A 2
Forward Transconductance gfs 23 S VDS = - 10 V, ID = - 10 A 2
Input Capacitance Ciss 1960 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 380 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 325 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
VDS Temperature Coefficient ΔVDS/TJ -31 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 5.5 mV/°C ID = - 250 µA 2
Gate-Source Charge Qgs 6 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 2
Gate-Drain Charge Qgd 11 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 2
Reverse Recovery Fall Time ta 13 ns IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 15 ns IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4835DDY-T1-E3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4835ddy-t1-e3-vb-etched.step / si4835ddy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4835ddy-t1-e3-vb.step / si4835ddy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 ca1860597b865fb5, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF