component
SI4599DY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si4599dy-t1-ge3: specified limits as data (metadata.characteristics, 57 rows from the datasheet)
2 files changed
+756−1
README.md+64@@ -26,6 +26,70 @@ SI4599DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions ex | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-Channel) | VDS | | | 40 | V | | 1 |+| Drain-Source Voltage (P-Channel) | VDS | | | -40 | V | | 1 |+| Gate-Source Voltage (N and P) | VGS | -20 | | 20 | V | Printed as ±20 | 1 |+| Continuous Drain Current (N-Channel) | ID | | | 6.8 | A | TC = 25 °C, TJ = 150 °C | 1 |+| Continuous Drain Current (P-Channel) | ID | | | -5.8 | A | TC = 25 °C, TJ = 150 °C | 1 |+| Continuous Drain Current (N-Channel) | ID | | | 5.4 | A | TC = 70 °C | 1 |+| Continuous Drain Current (P-Channel) | ID | | | -4.7 | A | TC = 70 °C | 1 |+| Continuous Drain Current (N-Channel) | ID | | | 5.6 | A | TA = 25 °C (notes b, c) | 1 |+| Continuous Drain Current (N-Channel) | ID | | | 4.4 | A | TA = 70 °C (notes b, c) | 1 |+| Continuous Drain Current (P-Channel) | ID | | | -3.7 | A | TA = 70 °C (notes b, c) | 1 |+| Pulsed Drain Current (N-Channel) | IDM | | | 20 | A | | 1 |+| Pulsed Drain Current (P-Channel) | IDM | | | -20 | A | | 1 |+| Source-Drain Current Diode Current (N-Channel) | IS | | | 2.5 | A | TC = 25 °C | 1 |+| Source-Drain Current Diode Current (P-Channel) | IS | | | -2.5 | A | TC = 25 °C | 1 |+| Source-Drain Current Diode Current (N-Channel) | IS | | | 1.6 | A | TA = 25 °C (notes b, c) | 1 |+| Source-Drain Current Diode Current (P-Channel) | IS | | | -1.6 | A | TA = 25 °C (notes b, c) | 1 |+| Pulsed Source-Drain Current (N-Channel) | ISM | | | 20 | A | | 1 |+| Pulsed Source-Drain Current (P-Channel) | ISM | | | -20 | A | | 1 |+| Single Pulse Avalanche Current (N-Channel) | IAS | | | 7 | A | L = 0.1 mH | 1 |+| Single Pulse Avalanche Current (P-Channel) | IAS | | | -10 | A | L = 0.1 mH | 1 |+| Single Pulse Avalanche Energy (N-Channel) | EAS | | | 2.45 | mJ | L = 0.1 mH | 1 |+| Single Pulse Avalanche Energy (P-Channel) | EAS | | | 5 | mJ | L = 0.1 mH | 1 |+| Maximum Power Dissipation (N-Channel) | PD | | | 3 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation (P-Channel) | PD | | | 3.1 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation (N-Channel) | PD | | | 1.9 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation (P-Channel) | PD | | | 2 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation (N-Channel) | PD | | | 2 | W | TA = 25 °C (notes b, c) | 1 |+| Maximum Power Dissipation (N-Channel) | PD | | | 1.25 | W | TA = 70 °C (notes b, c) | 1 |+| Maximum Power Dissipation (P-Channel) | PD | | | 1.25 | W | TA = 70 °C (notes b, c) | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient (N-Channel), t ≤ 10 s | RthJA | | 54 | 64 | °C/W | t ≤ 10 s (notes b, d) | 1 |+| Maximum Junction-to-Ambient (P-Channel), t ≤ 10 s | RthJA | | 49 | 62.5 | °C/W | t ≤ 10 s (notes b, d) | 1 |+| Maximum Junction-to-Ambient, Steady State | RthJA | | | 120 | °C/W | Steady state (note d) | 1 |+| Maximum Junction-to-Foot (Drain) (N-Channel), Steady State | RthJF | | 33 | 42 | °C/W | Steady state | 1 |+| Maximum Junction-to-Foot (Drain) (P-Channel), Steady State | RthJF | | 30 | 40 | °C/W | Steady state | 1 |+| Drain-Source Breakdown Voltage (N-Channel) | VDS | 40 | | | V | VGS = 0 V, ID = 250 µA | 2 |+| Drain-Source Breakdown Voltage (P-Channel) | VDS | -40 | | | V | VGS = 0 V, ID = -250 µA | 2 |+| Gate Threshold Voltage (N-Channel) | VGS(th) | 1.4 | | 3 | V | VDS = VGS, ID = 250 µA | 2 |+| Gate Threshold Voltage (P-Channel) | VGS(th) | -2.5 | | -1.2 | V | VDS = VGS, ID = -250 µA | 2 |+| Gate-Body Leakage (N-Channel) | IGSS | | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |+| Gate-Body Leakage (P-Channel) | IGSS | | | -100 | nA | VDS = 0 V, VGS = ±20 V | 2 |+| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | µA | VDS = 40 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -1 | µA | VDS = -40 V, VGS = 0 V | 2 |+| On-State Drain Current (N-Channel) | ID(on) | 10 | | | A | VDS = 5 V, VGS = 10 V | 2 |+| On-State Drain Current (P-Channel) | ID(on) | -10 | | | A | VDS = -5 V, VGS = -10 V | 2 |+| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.0295 | 0.0355 | Ω | VGS = 10 V, ID = 5 A | 2 |+| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 0.037 | 0.045 | Ω | VGS = -10 V, ID = -5 A | 2 |+| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 0.0355 | 0.0425 | Ω | VGS = 4.5 V, ID = 4 A | 2 |+| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 0.05 | 0.062 | Ω | VGS = -4.5 V, ID = -4 A | 2 |+| Total Gate Charge (N-Channel) | Qg | | 11.7 | 20 | nC | VDS = 20 V, VGS = 10 V, ID = 5 A | 2 |+| Total Gate Charge (P-Channel) | Qg | | 25 | 38 | nC | VDS = -20 V, VGS = -10 V, ID = -5 A | 2 |+| Total Gate Charge (N-Channel) | Qg | | 5.3 | 9 | nC | VDS = 20 V, VGS = 4.5 V, ID = 5 A | 2 |+| Total Gate Charge (P-Channel) | Qg | | 11.8 | 18 | nC | VDS = -20 V, VGS = -4.5 V, ID = -5 A | 2 |+| Gate Resistance (N-Channel) | Rg | 0.5 | 2.2 | 4.5 | Ω | f = 1 MHz | 2 |+| Gate Resistance (P-Channel) | Rg | 1 | 5.5 | 11 | Ω | f = 1 MHz | 2 |+| Drain-Source Body Diode Voltage (N-Channel) | VSD | | 0.78 | 1.2 | V | IS = 1.6 A | 3 |+| Drain-Source Body Diode Voltage (P-Channel) | VSD | | -0.76 | -1.2 | V | IS = -1.6 A | 3 |+ ## CAD (KiCad official) - Symbol: `SI4599DY-T1-GE3`
page.json+692−1@@ -180,6 +180,697 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "0b594c9e2631ddee",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-Channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-Channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N and P)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Printed as ±20",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.8,+ "conditions": "TC = 25 °C, TJ = 150 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -5.8,+ "conditions": "TC = 25 °C, TJ = 150 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.4,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -4.7,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.6,+ "conditions": "TA = 25 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.4,+ "conditions": "TA = 70 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3.7,+ "conditions": "TA = 70 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N-Channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (P-Channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Current Diode Current (N-Channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Current Diode Current (P-Channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.5,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Current Diode Current (N-Channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TA = 25 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Current Diode Current (P-Channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1.6,+ "conditions": "TA = 25 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source-Drain Current (N-Channel)",+ "symbol": "ISM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source-Drain Current (P-Channel)",+ "symbol": "ISM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current (N-Channel)",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current (P-Channel)",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (N-Channel)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 2.45,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (P-Channel)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.1,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.9,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TA = 25 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "TA = 70 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "TA = 70 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (N-Channel), t ≤ 10 s",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 54,+ "max": 64,+ "conditions": "t ≤ 10 s (notes b, d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (P-Channel), t ≤ 10 s",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 49,+ "max": 62.5,+ "conditions": "t ≤ 10 s (notes b, d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient, Steady State",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "Steady state (note d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain) (N-Channel), Steady State",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 33,+ "max": 42,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain) (P-Channel), Steady State",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 30,+ "max": 40,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (N-Channel)",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (P-Channel)",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (N-Channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.4,+ "typ": null,+ "max": 3,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (P-Channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -2.5,+ "typ": null,+ "max": -1.2,+ "conditions": "VDS = VGS, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage (N-Channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage (P-Channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VDS = 0 V, VGS = ±20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N-Channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 40 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (P-Channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -40 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current (N-Channel)",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "VDS = 5 V, VGS = 10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current (P-Channel)",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -10,+ "typ": null,+ "max": null,+ "conditions": "VDS = -5 V, VGS = -10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.0295,+ "max": 0.0355,+ "conditions": "VGS = 10 V, ID = 5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.037,+ "max": 0.045,+ "conditions": "VGS = -10 V, ID = -5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.0355,+ "max": 0.0425,+ "conditions": "VGS = 4.5 V, ID = 4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.05,+ "max": 0.062,+ "conditions": "VGS = -4.5 V, ID = -4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (N-Channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 11.7,+ "max": 20,+ "conditions": "VDS = 20 V, VGS = 10 V, ID = 5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (P-Channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 25,+ "max": 38,+ "conditions": "VDS = -20 V, VGS = -10 V, ID = -5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (N-Channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.3,+ "max": 9,+ "conditions": "VDS = 20 V, VGS = 4.5 V, ID = 5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (P-Channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 11.8,+ "max": 18,+ "conditions": "VDS = -20 V, VGS = -4.5 V, ID = -5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance (N-Channel)",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.5,+ "typ": 2.2,+ "max": 4.5,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance (P-Channel)",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 1,+ "typ": 5.5,+ "max": 11,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Body Diode Voltage (N-Channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.78,+ "max": 1.2,+ "conditions": "IS = 1.6 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Body Diode Voltage (P-Channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.76,+ "max": -1.2,+ "conditions": "IS = -1.6 A",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -221,4 +912,4 @@ "visibility": { "public": true }-}+}