component
SI4599DY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4599DY-T1-GE3
Vishay Intertech · MOSFETs · SO-8
SI4599DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET; the continuous source-drain diode current is limited to 2.5 A at TC = 25 °C, with a 20 A pulsed limit. |
| 2 | G1 | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET; the continuous source-drain diode current is limited to -2.5 A at TC = 25 °C, with a -20 A pulsed limit. |
| 4 | G2 | input | Gate of the P-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET; the drain-source voltage is rated at -40 V. |
| 6 | D2 | passive | Drain of the P-channel MOSFET; the drain-source voltage is rated at -40 V. |
| 7 | D1 | passive | Drain of the N-channel MOSFET; the drain-source voltage is rated at 40 V. |
| 8 | D1 | passive | Drain of the N-channel MOSFET; the drain-source voltage is rated at 40 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 40 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -40 | V | 1 | |||
| Gate-Source Voltage (N and P) | VGS | -20 | 20 | V | Printed as ±20 | 1 | |
| Continuous Drain Current (N-Channel) | ID | 6.8 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -5.8 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 5.4 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -4.7 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 5.6 | A | TA = 25 °C (notes b, c) | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 4.4 | A | TA = 70 °C (notes b, c) | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -3.7 | A | TA = 70 °C (notes b, c) | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 20 | A | 1 | |||
| Pulsed Drain Current (P-Channel) | IDM | -20 | A | 1 | |||
| Source-Drain Current Diode Current (N-Channel) | IS | 2.5 | A | TC = 25 °C | 1 | ||
| Source-Drain Current Diode Current (P-Channel) | IS | -2.5 | A | TC = 25 °C | 1 | ||
| Source-Drain Current Diode Current (N-Channel) | IS | 1.6 | A | TA = 25 °C (notes b, c) | 1 | ||
| Source-Drain Current Diode Current (P-Channel) | IS | -1.6 | A | TA = 25 °C (notes b, c) | 1 | ||
| Pulsed Source-Drain Current (N-Channel) | ISM | 20 | A | 1 | |||
| Pulsed Source-Drain Current (P-Channel) | ISM | -20 | A | 1 | |||
| Single Pulse Avalanche Current (N-Channel) | IAS | 7 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current (P-Channel) | IAS | -10 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy (N-Channel) | EAS | 2.45 | mJ | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy (P-Channel) | EAS | 5 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation (N-Channel) | PD | 3 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (P-Channel) | PD | 3.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (N-Channel) | PD | 1.9 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation (P-Channel) | PD | 2 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation (N-Channel) | PD | 2 | W | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation (N-Channel) | PD | 1.25 | W | TA = 70 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation (P-Channel) | PD | 1.25 | W | TA = 70 °C (notes b, c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (N-Channel), t ≤ 10 s | RthJA | 54 | 64 | °C/W | t ≤ 10 s (notes b, d) | 1 | |
| Maximum Junction-to-Ambient (P-Channel), t ≤ 10 s | RthJA | 49 | 62.5 | °C/W | t ≤ 10 s (notes b, d) | 1 | |
| Maximum Junction-to-Ambient, Steady State | RthJA | 120 | °C/W | Steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain) (N-Channel), Steady State | RthJF | 33 | 42 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Foot (Drain) (P-Channel), Steady State | RthJF | 30 | 40 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage (N-Channel) | VDS | 40 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | VDS | -40 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1.4 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -2.5 | -1.2 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage (N-Channel) | IGSS | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Gate-Body Leakage (P-Channel) | IGSS | -100 | nA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | µA | VDS = 40 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | µA | VDS = -40 V, VGS = 0 V | 2 | ||
| On-State Drain Current (N-Channel) | ID(on) | 10 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-Channel) | ID(on) | -10 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.0295 | 0.0355 | Ω | VGS = 10 V, ID = 5 A | 2 | |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.037 | 0.045 | Ω | VGS = -10 V, ID = -5 A | 2 | |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.0355 | 0.0425 | Ω | VGS = 4.5 V, ID = 4 A | 2 | |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.05 | 0.062 | Ω | VGS = -4.5 V, ID = -4 A | 2 | |
| Total Gate Charge (N-Channel) | Qg | 11.7 | 20 | nC | VDS = 20 V, VGS = 10 V, ID = 5 A | 2 | |
| Total Gate Charge (P-Channel) | Qg | 25 | 38 | nC | VDS = -20 V, VGS = -10 V, ID = -5 A | 2 | |
| Total Gate Charge (N-Channel) | Qg | 5.3 | 9 | nC | VDS = 20 V, VGS = 4.5 V, ID = 5 A | 2 | |
| Total Gate Charge (P-Channel) | Qg | 11.8 | 18 | nC | VDS = -20 V, VGS = -4.5 V, ID = -5 A | 2 | |
| Gate Resistance (N-Channel) | Rg | 0.5 | 2.2 | 4.5 | Ω | f = 1 MHz | 2 |
| Gate Resistance (P-Channel) | Rg | 1 | 5.5 | 11 | Ω | f = 1 MHz | 2 |
| Drain-Source Body Diode Voltage (N-Channel) | VSD | 0.78 | 1.2 | V | IS = 1.6 A | 3 | |
| Drain-Source Body Diode Voltage (P-Channel) | VSD | -0.76 | -1.2 | V | IS = -1.6 A | 3 |
CAD (KiCad official)
- Symbol:
SI4599DY-T1-GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4599dy-t1-ge3-etched.step/si4599dy-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4599dy-t1-ge3.step/si4599dy-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (14 pp, sha256
0b594c9e2631ddee, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).