component
SI4559ADY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si4559ady-t1-ge3: specified limits as data (metadata.characteristics, 60 rows from the datasheet)
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+795−1
README.md+67@@ -26,6 +26,73 @@ SI4559ADY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions e | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source breakdown voltage (N-Ch) | VDS | 60 | | | V | VGS = 0 V, ID = 250 µA N-Ch | 2 |+| Drain-source breakdown voltage (P-Ch) | VDS | -60 | | | V | VGS = 0 V, ID = -250 µA P-Ch | 2 |+| Gate threshold voltage (N-Ch) | VGS(th) | 1 | | 3 | V | VDS = VGS, ID = 250 µA N-Ch | 2 |+| Gate threshold voltage (P-Ch) | VGS(th) | -1 | | -3 | V | VDS = VGS, ID = -250 µA P-Ch | 2 |+| Gate-body leakage (N-Ch) | IGSS | | | 100 | nA | VDS = 0 V, VGS = ± 20 V N-Ch | 2 |+| Gate-body leakage (P-Ch) | IGSS | | | -100 | nA | VDS = 0 V, VGS = ± 20 V P-Ch | 2 |+| Zero gate voltage drain current (N-Ch) | IDSS | | | 1 | µA | VDS = 60 V, VGS = 0 V N-Ch | 2 |+| Zero gate voltage drain current (P-Ch) | IDSS | | | -1 | µA | VDS = -60 V, VGS = 0 V P-Ch | 2 |+| Zero gate voltage drain current at TJ = 55 °C (N-Ch) | IDSS | | | 10 | µA | VDS = 60 V, VGS = 0 V, TJ = 55 °C N-Ch | 2 |+| Zero gate voltage drain current at TJ = 55 °C (P-Ch) | IDSS | | | -10 | µA | VDS = -60 V, VGS = 0 V, TJ = 55 °C P-Ch | 2 |+| On-state drain current (N-Ch) | ID(on) | 20 | | | A | VDS 5 V, VGS = 10 V N-Ch | 2 |+| On-state drain current (P-Ch) | ID(on) | -25 | | | A | VDS -5 V, VGS = -10 V P-Ch | 2 |+| Drain-source on-state resistance (N-Ch) | RDS(on) | | | 0.058 | Ω | VGS = 10 V, ID = 4.3 A N-Ch | 2 |+| Drain-source on-state resistance (P-Ch) | RDS(on) | | | 0.12 | Ω | VGS = -10 V, ID = -3.1 A P-Ch | 2 |+| Drain-source on-state resistance (N-Ch) | RDS(on) | | | 0.072 | Ω | VGS = 4.5 V, ID = 3.9 A N-Ch | 2 |+| Drain-source on-state resistance (P-Ch) | RDS(on) | | | 0.15 | Ω | VGS = -4.5 V, ID = -0.2 A P-Ch | 2 |+| Total gate charge at VGS = 10 V (N-Ch) | Qg | | | 20 | nC | VDS = 30 V, VGS = 10 V, ID = 4.3 A N-Ch | 2 |+| Total gate charge at VGS = -10 V (P-Ch) | Qg | | | 22 | nC | VDS = -30 V, VGS = -10 V, ID = -3.1 A P-Ch | 2 |+| Total gate charge at VGS = 4.5 V (N-Ch) | Qg | | | 9 | nC | VDS = 30 V, VGS = 4.5 V, ID = 4.3 A N-Ch | 2 |+| Total gate charge at VGS = -4.5 V (P-Ch) | Qg | | | 12 | nC | VDS = -30 V, VGS = -4.5 V, ID = -3.1 A P-Ch | 2 |+| Gate resistance (N-Ch) | Rg | | | 3 | Ω | f = 1 MHz N-Ch | 2 |+| Gate resistance (P-Ch) | Rg | | | 20 | Ω | f = 1 MHz P-Ch | 2 |+| Body diode voltage (N-Ch) | VSD | | | 1.2 | V | IS = 1.7 A N-Ch | 3 |+| Body diode voltage (P-Ch) | VSD | | | -1.2 | V | IS = -2 A P-Ch | 3 |+| Continuous source-drain diode current (N-Ch) | IS | | | 2.6 | A | TC = 25 °C N-Ch | 3 |+| Continuous source-drain diode current (P-Ch) | IS | | | -2.8 | A | TC = 25 °C P-Ch | 3 |+| Pulsed diode forward current (N-Ch) | ISM | | | 20 | A | | 3 |+| Pulsed diode forward current (P-Ch) | ISM | | | -25 | A | | 3 |+| Body diode reverse recovery time (N-Ch) | trr | | | 60 | ns | IF = 1.7 A, di/dt = 100 A/µs, TJ = 25 °C N-Ch | 3 |+| Body diode reverse recovery time (P-Ch) | trr | | | 50 | ns | IF = -2 A, di/dt = -100 A/µs, TJ = 25 °C P-Ch | 3 |+| Body diode reverse recovery charge (N-Ch) | Qrr | | | 50 | nC | | 3 |+| Body diode reverse recovery charge (P-Ch) | Qrr | | | 60 | nC | | 3 |+| Turn-on delay time at VGEN = 10 V (N-Ch) | td(on) | | | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch | 3 |+| Turn-on delay time at VGEN = -10 V (P-Ch) | td(on) | | | 15 | ns | VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch | 3 |+| Rise time at VGEN = 10 V (N-Ch) | tr | | | 25 | ns | VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch | 3 |+| Rise time at VGEN = -10 V (P-Ch) | tr | | | 20 | ns | VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch | 3 |+| Turn-off delay time at VGEN = 10 V (N-Ch) | td(off) | | | 30 | ns | VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch | 3 |+| Turn-off delay time at VGEN = -10 V (P-Ch) | td(off) | | | 55 | ns | VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch | 3 |+| Fall time at VGEN = 10 V (N-Ch) | tf | | | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch | 3 |+| Fall time at VGEN = -10 V (P-Ch) | tf | | | 45 | ns | VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch | 3 |+| Drain-source voltage (N-Ch) | VDS | | | 60 | V | | 1 |+| Drain-source voltage (P-Ch) | VDS | | | -60 | V | | 1 |+| Gate-source voltage (N-Ch) | VGS | -20 | | 20 | V | | 1 |+| Gate-source voltage (P-Ch) | VGS | -20 | | 20 | V | | 1 |+| Continuous drain current (N-Ch) | ID | | | 5.3 | A | TC = 25 °C (TJ = 150 °C) | 1 |+| Continuous drain current (P-Ch) | ID | | | -3.9 | A | TC = 25 °C (TJ = 150 °C) | 1 |+| Pulsed drain current (N-Ch) | IDM | | | 20 | A | 10 µs pulse width | 1 |+| Pulsed drain current (P-Ch) | IDM | | | -25 | A | 10 µs pulse width | 1 |+| Maximum power dissipation (N-Ch) | PD | | | 3.1 | W | TC = 25 °C | 1 |+| Maximum power dissipation (P-Ch) | PD | | | 3.4 | W | TC = 25 °C | 1 |+| Single pulse avalanche current (N-Ch) | IAS | | | 11 | A | L = 0.1 mH | 1 |+| Single pulse avalanche current (P-Ch) | IAS | | | 15 | A | L = 0.1 mH | 1 |+| Single pulse avalanche energy (N-Ch) | EAS | | | 6.1 | mJ | | 1 |+| Single pulse avalanche energy (P-Ch) | EAS | | | 11 | mJ | | 1 |+| Operating junction and storage temperature range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum junction-to-ambient (N-Ch) | RthJA | | 55 | 62.5 | °C/W | t ≤ 10 s | 1 |+| Maximum junction-to-ambient (P-Ch) | RthJA | | 53 | 62.5 | °C/W | t ≤ 10 s | 1 |+| Maximum junction-to-foot (drain) (N-Ch) | RthJF | | 33 | 40 | °C/W | Steady state | 1 |+| Maximum junction-to-foot (drain) (P-Ch) | RthJF | | 30 | 37 | °C/W | Steady state | 1 |+| Maximum junction-to-ambient, steady state (N-Ch and P-Ch) | RthJA | | | 110 | °C/W | Steady state (note d) | 1 |+ ## CAD (KiCad official) - Symbol: `SI4559ADY-T1-GE3`
page.json+728−1@@ -181,6 +181,733 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "420507069cad3eb3",+ "rows": [+ {+ "name": "Drain-source breakdown voltage (N-Ch)",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 µA N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage (P-Ch)",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 µA P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage (N-Ch)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 3,+ "conditions": "VDS = VGS, ID = 250 µA N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage (P-Ch)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": null,+ "max": -3,+ "conditions": "VDS = VGS, ID = -250 µA P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage (N-Ch)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage (P-Ch)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VDS = 0 V, VGS = ± 20 V P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (N-Ch)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 60 V, VGS = 0 V N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (P-Ch)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -60 V, VGS = 0 V P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current at TJ = 55 °C (N-Ch)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 60 V, VGS = 0 V, TJ = 55 °C N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current at TJ = 55 °C (P-Ch)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VDS = -60 V, VGS = 0 V, TJ = 55 °C P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state drain current (N-Ch)",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VDS 5 V, VGS = 10 V N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state drain current (P-Ch)",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -25,+ "typ": null,+ "max": null,+ "conditions": "VDS -5 V, VGS = -10 V P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance (N-Ch)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.058,+ "conditions": "VGS = 10 V, ID = 4.3 A N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance (P-Ch)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.12,+ "conditions": "VGS = -10 V, ID = -3.1 A P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance (N-Ch)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.072,+ "conditions": "VGS = 4.5 V, ID = 3.9 A N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance (P-Ch)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.15,+ "conditions": "VGS = -4.5 V, ID = -0.2 A P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge at VGS = 10 V (N-Ch)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VDS = 30 V, VGS = 10 V, ID = 4.3 A N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge at VGS = -10 V (P-Ch)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 22,+ "conditions": "VDS = -30 V, VGS = -10 V, ID = -3.1 A P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge at VGS = 4.5 V (N-Ch)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 9,+ "conditions": "VDS = 30 V, VGS = 4.5 V, ID = 4.3 A N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge at VGS = -4.5 V (P-Ch)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "VDS = -30 V, VGS = -4.5 V, ID = -3.1 A P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance (N-Ch)",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "f = 1 MHz N-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance (P-Ch)",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "f = 1 MHz P-Ch",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode voltage (N-Ch)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "IS = 1.7 A N-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body diode voltage (P-Ch)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "IS = -2 A P-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Continuous source-drain diode current (N-Ch)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.6,+ "conditions": "TC = 25 °C N-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Continuous source-drain diode current (P-Ch)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.8,+ "conditions": "TC = 25 °C P-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed diode forward current (N-Ch)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed diode forward current (P-Ch)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -25,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery time (N-Ch)",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "IF = 1.7 A, di/dt = 100 A/µs, TJ = 25 °C N-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery time (P-Ch)",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IF = -2 A, di/dt = -100 A/µs, TJ = 25 °C P-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery charge (N-Ch)",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery charge (P-Ch)",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time at VGEN = 10 V (N-Ch)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time at VGEN = -10 V (P-Ch)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise time at VGEN = 10 V (N-Ch)",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise time at VGEN = -10 V (P-Ch)",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time at VGEN = 10 V (N-Ch)",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time at VGEN = -10 V (P-Ch)",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 55,+ "conditions": "VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall time at VGEN = 10 V (N-Ch)",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall time at VGEN = -10 V (P-Ch)",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source voltage (N-Ch)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source voltage (P-Ch)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage (N-Ch)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage (P-Ch)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current (N-Ch)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.3,+ "conditions": "TC = 25 °C (TJ = 150 °C)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current (P-Ch)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3.9,+ "conditions": "TC = 25 °C (TJ = 150 °C)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current (N-Ch)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "10 µs pulse width",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current (P-Ch)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -25,+ "conditions": "10 µs pulse width",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation (N-Ch)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.1,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation (P-Ch)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.4,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche current (N-Ch)",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche current (P-Ch)",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy (N-Ch)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 6.1,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy 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40,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum junction-to-foot (drain) (P-Ch)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 30,+ "max": 37,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum junction-to-ambient, steady state (N-Ch and P-Ch)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "Steady state (note d)",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -222,4 +949,4 @@ "visibility": { "public": true }-}+}