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SI4532DY-NL-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4532DY-NL-VB

VBsemi Elec · MOSFETs · SO-8

SI4532DY-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET, with absolute maximum drain-source voltage of 30 V and gate-source voltage of ±20 V.
2 G1 input Gate of the N-channel MOSFET, with absolute maximum gate-source voltage of ±20 V.
3 S2 passive Source of the P-channel MOSFET, with absolute maximum drain-source voltage of -30 V and gate-source voltage of ±20 V.
4 G2 input Gate of the P-channel MOSFET, with absolute maximum gate-source voltage of ±20 V.
5 D2 passive Drain of the P-channel MOSFET, with absolute maximum drain-source voltage of -30 V.
6 D2 passive Drain of the P-channel MOSFET (second drain pin), with absolute maximum drain-source voltage of -30 V.
7 D1 passive Drain of the N-channel MOSFET, with absolute maximum drain-source voltage of 30 V.
8 D1 passive Drain of the N-channel MOSFET (second drain pin), with absolute maximum drain-source voltage of 30 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 30 V N-Channel 1
Drain-Source Voltage (P-Channel) VDS -30 V P-Channel 1
Gate-Source Voltage VGS -20 20 V N and P channel 1
Continuous Drain Current TC=25 °C ID 8 A TC = 25 °C, N-Channel 1
Continuous Drain Current TC=25 °C ID -8 A TC = 25 °C, P-Channel 1
Continuous Drain Current TC=70 °C ID 6.8 A TC = 70 °C, N-Channel 1
Continuous Drain Current TC=70 °C ID -6.8 A TC = 70 °C, P-Channel 1
Continuous Drain Current TA=25 °C ID 6.8 A TA = 25 °C, N-Channel, surface mounted 1
Continuous Drain Current TA=25 °C ID -6.6 A TA = 25 °C, P-Channel, surface mounted 1
Continuous Drain Current TA=70 °C ID 5.4 A TA = 70 °C, N-Channel, surface mounted 1
Continuous Drain Current TA=70 °C ID -5.3 A TA = 70 °C, P-Channel, surface mounted 1
Pulsed Drain Current IDM 40 A 10 µs pulse width, N-Channel 1
Pulsed Drain Current IDM -40 A 10 µs pulse width, P-Channel 1
Continuous Source-Drain Diode Current TC=25 °C IS 2.6 A TC = 25 °C, N-Channel 1
Continuous Source-Drain Diode Current TC=25 °C IS -2.6 A TC = 25 °C, P-Channel 1
Continuous Source-Drain Diode Current TA=25 °C IS 1.6 A TA = 25 °C, N-Channel 1
Continuous Source-Drain Diode Current TA=25 °C IS -1.6 A TA = 25 °C, P-Channel 1
Pulsed Source-Drain Current ISM 40 A N-Channel 1
Pulsed Source-Drain Current ISM -40 A P-Channel 1
Single Pulse Avalanche Current IAS 10 A L = 0.1 mH, N-Channel 1
Single Pulse Avalanche Current IAS -20 A L = 0.1 mH, P-Channel 1
Single Pulse Avalanche Energy EAS 520 mJ 1
Maximum Power Dissipation TC=25 °C PD 3.1 W TC = 25 °C, N-Channel 1
Maximum Power Dissipation TC=25 °C PD 3.2 W TC = 25 °C, P-Channel 1
Maximum Power Dissipation TA=25 °C PD 2 W TA = 25 °C, surface mounted, N and P channel 1
Maximum Power Dissipation TA=70 °C PD 1.28 W TA = 70 °C, surface mounted, N and P channel 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (t ≤ 10 s) RthJA 50 62.5 °C/W t ≤ 10 s, N-Channel 1
Maximum Junction-to-Ambient (t ≤ 10 s) RthJA 47 62.5 °C/W t ≤ 10 s, P-Channel 1
Maximum Junction-to-Foot (Drain), steady state RthJF 30 40 °C/W Steady state, N-Channel 1
Maximum Junction-to-Foot (Drain), steady state RthJF 29 38 °C/W Steady state, P-Channel 1
Maximum Junction-to-Ambient, steady state (note d) RthJA 120 °C/W Steady state, N-Channel, note d 1
Maximum Junction-to-Ambient, steady state (note d) RthJA 110 °C/W Steady state, P-Channel, note d 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0 V, ID = 250 µA, N-Channel 2
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0 V, ID = -250 µA, P-Channel 2
Gate Threshold Voltage VGS(th) 1 2 V VDS = VGS, ID = 250 µA, N-Channel 2
Gate Threshold Voltage VGS(th) -2 -1 V VDS = VGS, ID = -250 µA, P-Channel 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±12 V, N-Channel 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V, N-Channel 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V, P-Channel 2
Zero Gate Voltage Drain Current, TJ = 55 °C IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Channel 2
Zero Gate Voltage Drain Current, TJ = 55 °C IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C, P-Channel 2
On-State Drain Current ID(on) 20 A VDS = 5 V, VGS = 10 V, N-Channel 2
On-State Drain Current ID(on) -20 A VDS = -5 V, VGS = -10 V, P-Channel 2
Drain-Source On-State Resistance RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A, N-Channel 2
Drain-Source On-State Resistance RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A, N-Channel 2
Drain-Source On-State Resistance RDS(on) 0.04 Ω VGS = -10 V, ID = -8 A, P-Channel 2
Drain-Source On-State Resistance RDS(on) 0.044 Ω VGS = -8 V, ID = -6.5 A, P-Channel 2
Drain-Source On-State Resistance RDS(on) 0.05 Ω VGS = -4.5 V, ID = -5 A, P-Channel 2
Gate Resistance Rg 0.3 1 2.3 Ω f = 1 MHz, N-Channel 2
Gate Resistance Rg 1.2 5.7 9.6 Ω f = 1 MHz, P-Channel 2
Body Diode Voltage VSD 0.81 1.2 V IS = 5.4 A, N-Channel 3
Body Diode Voltage VSD -0.77 -1.2 V IS = -2 A, P-Channel 3
Body Diode Reverse Recovery Charge Qrr 10 17 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C, N-Channel 3
Body Diode Reverse Recovery Charge Qrr 29 47 nC IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C, P-Channel 3
Turn-On Delay Time (VGEN = 10 V) td(on) 4 8 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω, N-Channel 3
Turn-On Delay Time (VGEN = 10 V) td(on) 10 16 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Channel 3
Rise Time (VGEN = 10 V) tr 10 17 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω, N-Channel 3
Rise Time (VGEN = -10 V) tr 9 15 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Channel 3
Turn-Off Delay Time (VGEN = -10 V) td(off) 23 26 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Channel 3
Fall Time (VGEN = 10 V) tf 5 9 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω, N-Channel 3
Fall Time (VGEN = -10 V) tf 10 16 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Channel 3

CAD (KiCad official)

  • Symbol: SI4532DY-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4532dy-nl-vb-etched.step / si4532dy-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4532dy-nl-vb.step / si4532dy-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 e625442200b71b25, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF