SI4532CDY-T1-GE3

{
  "slug": "si4532cdy-t1-ge3",
  "version": "0.1.0",
  "type": "component",
  "description": "Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "si4532cdy-t1-ge3.kicad_mod",
    "si4532cdy-t1-ge3.glb",
    "si4532cdy-t1-ge3.step",
    "si4532cdy-t1-ge3.lbr",
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    "docs/si4532cdy-t1-ge3-datasheet.pdf",
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    "viewers/footprint.html",
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    "si4532cdy-t1-ge3-hero.overlay.json",
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  "component": {
    "mpn": "SI4532CDY-T1-GE3",
    "manufacturer": "Vishay Intertech",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879930737876992",
    "parts": {
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      "lbr": "si4532cdy-t1-ge3.lbr"
    },
    "distributor_links": {
      "lcsc": "C145447",
      "digikey": "SI4532CDY-T1-GE3TR-ND"
    },
    "distributor_check": {
      "checked_at": "2026-10-17T20:14:34Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "SI4532CDY-T1-GE3TR-ND",
        "status": "found"
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      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of the N-channel MOSFET; the N-channel drain-source voltage is rated 30 V (VDS)."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGS)."
      },
      {
        "number": "3",
        "name": "S2",
        "type": "passive",
        "description": "Source of the P-channel MOSFET; the P-channel drain-source voltage is rated -30 V (VDS)."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGS)."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET; continuous drain current is -4.3 A at TC = 25 °C."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET; continuous drain current is -4.3 A at TC = 25 °C."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET; continuous drain current is 6.0 A at TC = 25 °C."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET; continuous drain current is 6.0 A at TC = 25 °C."
      }
    ],
    "provenance": {
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        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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        "cost_usd": 0.0709,
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        "pages": 14,
        "sha256": "83d462b9f60fec4a",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "file": "si4532cdy-t1-ge3-etched.step",
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        "sha256": "bdcb6181930cf4c32bd64b674a3128d8a0b9bc32116714714274ce9a45a7da6f",
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}