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SI4482DY-T1-E3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI4482DY-T1-E3-VB
VBsemi Elec · MOSFETs · SO-8
SI4482DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, rated with the device's 100 V drain-source voltage and 9 A continuous drain current at TC = 25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, rated with the device's 100 V drain-source voltage and 9 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, rated with the device's 100 V drain-source voltage and 9 A continuous drain current at TC = 25 °C. |
| 4 | G | input | Gate terminal; gate-source voltage is rated at ±20 V and the gate-source threshold is 1.0 V to 3.0 V at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for 100 V drain-source voltage; drain is internally common with pins 6 to 8. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for 100 V drain-source voltage; drain is internally common with pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, rated for 100 V drain-source voltage; drain is internally common with pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, rated for 100 V drain-source voltage; drain is internally common with pins 5 to 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | Printed as ±20 | 1 | |
| Continuous Drain Current | ID | 9 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 6 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 5 | A | TJ = 150 °C, TA = 70 °C (note b, c) | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 7 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 3.8 | A | TA = 25 °C (note b, c) | 1 | ||
| Single Pulse Avalanche Current | IAS | 30 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 112 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 14 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 5 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 4 | W | TA = 25 °C (note b, c) | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA = 70 °C (note b, c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 33 | 40 | °C/W | t ≤ 10 s (note b, f) | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 17 | 21 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 80 | °C/W | Maximum under steady state conditions (note d) | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 30 | A | VDS ≥ 10 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 33 | mΩ | VGS = 4.5 V, ID = 5 A | 2 | ||
| Total Gate Charge | Qg | 28.5 | 43 | nC | VDS = 75 V, VGS = 10 V, ID = 5 A | 2 | |
| Total Gate Charge | Qg | 23 | 35 | nC | VDS = 75 V, VGS = 8 V, ID = 5 A | 2 | |
| Gate Resistance | Rg | 0.8 | 1.3 | Ω | f = 1 MHz | 2 | |
| Turn-on Delay Time | td(on) | 14 | 21 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 12 | 18 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 22 | 33 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 6 | 10 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-on Delay Time | td(on) | 16 | 24 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 20 | 30 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 7 | 12 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | 0.77 | 1.2 | V | IS = 2.6 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 63 | 95 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 110 | 165 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
SI4482DY-T1-E3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4482dy-t1-e3-vb-etched.step/si4482dy-t1-e3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4482dy-t1-e3-vb.step/si4482dy-t1-e3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
ffeca0011d91f4ef, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI4482DY-T1-E3-VB
**VBsemi Elec** · MOSFETs · SO-8
SI4482DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, rated with the device's 100 V drain-source voltage and 9 A continuous drain current at TC = 25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, rated with the device's 100 V drain-source voltage and 9 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, rated with the device's 100 V drain-source voltage and 9 A continuous drain current at TC = 25 °C. |
| 4 | G | input | Gate terminal; gate-source voltage is rated at ±20 V and the gate-source threshold is 1.0 V to 3.0 V at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for 100 V drain-source voltage; drain is internally common with pins 6 to 8. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for 100 V drain-source voltage; drain is internally common with pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, rated for 100 V drain-source voltage; drain is internally common with pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, rated for 100 V drain-source voltage; drain is internally common with pins 5 to 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | Printed as ±20 | 1 |
| Continuous Drain Current | ID | | | 9 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 6 | A | TJ = 150 °C, TC = 70 °C | 1 |
| Continuous Drain Current | ID | | | 5 | A | TJ = 150 °C, TA = 70 °C (note b, c) | 1 |
| Pulsed Drain Current | IDM | | | 40 | A | | 1 |
| Continuous Source-Drain Diode Current | IS | | | 7 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 3.8 | A | TA = 25 °C (note b, c) | 1 |
| Single Pulse Avalanche Current | IAS | | | 30 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 112 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 14 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 5 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 4 | W | TA = 25 °C (note b, c) | 1 |
| Maximum Power Dissipation | PD | | | 2 | W | TA = 70 °C (note b, c) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 33 | 40 | °C/W | t ≤ 10 s (note b, f) | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 17 | 21 | °C/W | Steady state | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA | | | 80 | °C/W | Maximum under steady state conditions (note d) | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 30 | | | A | VDS ≥ 10 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 33 | mΩ | VGS = 4.5 V, ID = 5 A | 2 |
| Total Gate Charge | Qg | | 28.5 | 43 | nC | VDS = 75 V, VGS = 10 V, ID = 5 A | 2 |
| Total Gate Charge | Qg | | 23 | 35 | nC | VDS = 75 V, VGS = 8 V, ID = 5 A | 2 |
| Gate Resistance | Rg | | 0.8 | 1.3 | Ω | f = 1 MHz | 2 |
| Turn-on Delay Time | td(on) | | 14 | 21 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 12 | 18 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 22 | 33 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 6 | 10 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-on Delay Time | td(on) | | 16 | 24 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 20 | 30 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 7 | 12 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD | | 0.77 | 1.2 | V | IS = 2.6 A | 2 |
| Body Diode Reverse Recovery Time | trr | | 63 | 95 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 110 | 165 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
## CAD (KiCad official)
- Symbol: `SI4482DY-T1-E3-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `si4482dy-t1-e3-vb-etched.step` / `si4482dy-t1-e3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si4482dy-t1-e3-vb.step` / `si4482dy-t1-e3-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/si4482dy-t1-e3-vb-datasheet.pdf) (9 pp, sha256 `ffeca0011d91f4ef`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si4482dy-t1-e3-vb-datasheet.pdf)