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SI4455DY-T1-GE3

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4455DY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4455DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -150 V.
2 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -150 V.
3 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -150 V.
4 G passive Gate terminal of the P-channel MOSFET, with gate-source voltage limited to ±20 V.
5 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -2.8 A at TC = 25 °C and -2 A at TA = 25 °C (surface mounted on 1" x 1" FR4).
6 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -2.8 A at TC = 25 °C and -2 A at TA = 25 °C (surface mounted on 1" x 1" FR4).
7 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -2.8 A at TC = 25 °C and -2 A at TA = 25 °C (surface mounted on 1" x 1" FR4).
8 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -2.8 A at TC = 25 °C and -2 A at TA = 25 °C (surface mounted on 1" x 1" FR4).

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -150 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -2 -4 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -150 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -150 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -8 A VDS ≤ -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.245 0.295 Ω VGS = -10 V, ID = -4 A 2
Drain-Source On-State Resistance RDS(on) 0.26 0.315 Ω VGS = -6 V, ID = -3 A 2
Total Gate Charge Qg 27.5 42 nC VDS = -75 V, VGS = -10 V, ID = -3 A 2
Total Gate Charge Qg 23.2 35 nC VDS = -75 V, VGS = -6 V, ID = -3 A 2
Gate Resistance Rg 6.1 9.2 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 20 30 ns VDD = -75 V, RL = 25 Ω, ID = -3 A, VGEN = -6 V, Rg = 1 Ω 2
Rise Time tr 95 145 ns VDD = -75 V, RL = 25 Ω, ID = -3 A, VGEN = -6 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 38 60 ns VDD = -75 V, RL = 25 Ω, ID = -3 A, VGEN = -6 V, Rg = 1 Ω 2
Fall Time tf 34 51 ns VDD = -75 V, RL = 25 Ω, ID = -3 A, VGEN = -6 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 11 18 ns VDD = -75 V, RL = 25 Ω, ID = -3 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 28 42 ns VDD = -75 V, RL = 25 Ω, ID = -3 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 52 78 ns VDD = -75 V, RL = 25 Ω, ID = -3 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 35 53 ns VDD = -75 V, RL = 25 Ω, ID = -3 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -13 A TC = 25 °C 2
Pulse Diode Forward Current ISM -15 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -3 A 2
Body Diode Reverse Recovery Time trr 65 90 ns IF = -4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 180 270 nC IF = -4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS -150 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TJ = 150 °C) ID -2.8 A TC = 25 °C 1
Continuous Drain Current (TJ = 150 °C) ID -2.3 A TC = 70 °C 1
Continuous Drain Current (TJ = 150 °C) ID -2 A TA = 25 °C 1
Continuous Drain Current (TJ = 150 °C) ID -1.6 A TA = 70 °C 1
Pulsed Drain Current IDM -15 A 1
Continuous Source-Drain Diode Current IS -4.9 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.5 A TA = 25 °C 1
Avalanche Current IAS -15 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 11.25 mJ 1
Maximum Power Dissipation PD 5.9 W TC = 25 °C 1
Maximum Power Dissipation PD 3.8 W TC = 70 °C 1
Maximum Power Dissipation PD 3.1 W TA = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 33 40 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 80 °C/W Steady state (per note b) 1
Maximum Junction-to-Foot (Drain) RthJF 17 21 °C/W Steady state 1

CAD (KiCad official)

  • Symbol: SI4455DY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4455dy-t1-ge3-etched.step / si4455dy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4455dy-t1-ge3.step / si4455dy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 8da450d2121c65a3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF