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SI4447ADY-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4447ADY-T1-GE3-VB
VBsemi Elec · MOSFETs · SO-8
SI4447ADY-T1-GE3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; pins 1 to 3 are the source, with a drain-source voltage rating of -40 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; pins 1 to 3 are the source, with a drain-source voltage rating of -40 V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; pins 1 to 3 are the source, with a drain-source voltage rating of -40 V. |
| 4 | G | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; pins 5 to 8 are the drain, with a continuous drain current of -16.1 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; pins 5 to 8 are the drain, with a continuous drain current of -16.1 A at TC = 25 °C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; pins 5 to 8 are the drain, with a continuous drain current of -16.1 A at TC = 25 °C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; pins 5 to 8 are the drain, with a continuous drain current of -16.1 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -16.1 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -12.9 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | -10.2 | A | TA = 25 °C (notes b, c) | 1 | ||
| Continuous Drain Current | ID | -8.2 | A | TA = 70 °C (notes b, c) | 1 | ||
| Pulsed Drain Current | IDM | -50 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -5.3 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -2.1 | A | TA = 25 °C (notes b, c) | 1 | ||
| Single Pulse Avalanche Current | IAS | -28 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 39 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 6.3 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 4 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA = 70 °C (notes b, c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 37 | 50 | °C/W | t = 10 s (note c) | 1 | |
| Maximum Junction-to-Ambient | RthJA | 85 | °C/W | steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 16 | 20 | °C/W | steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | -40 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1.2 | -2.5 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 40 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS = - 40 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -25 | A | VDS - 5 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.01 | Ω | VGS = - 10 V, ID = - 10.2 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.014 | Ω | VGS = - 4.5 V, ID = - 8.4 A | 2 | ||
| Total Gate Charge | Qg | 64 | 95 | nC | VDS = - 20 V, VGS = - 10 V, ID = - 10.2 A | 2 | |
| Total Gate Charge | Qg | 33 | 50 | nC | VDS = - 20 V, VGS = - 4.5 V, ID = - 10.2 A | 2 | |
| Gate Resistance | Rg | 0.4 | 2 | 4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 57 | 86 | ns | VDD = - 20 V, RL = 2.4 Ω, ID - 8.2 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 50 | 75 | ns | VDD = - 20 V, RL = 2.4 Ω, ID - 8.2 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 40 | 60 | ns | VDD = - 20 V, RL = 2.4 Ω, ID - 8.2 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 17 | 26 | ns | VDD = - 20 V, RL = 2.4 Ω, ID - 8.2 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 13 | 20 | ns | VDD = - 20 V, RL = 2.4 Ω, ID - 8.2 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 11 | 20 | ns | VDD = - 20 V, RL = 2.4 Ω, ID - 8.2 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 45 | 68 | ns | VDD = - 20 V, RL = 2.4 Ω, ID - 8.2 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 9 | 18 | ns | VDD = - 20 V, RL = 2.4 Ω, ID - 8.2 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | -5.3 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -50 | A | 2 | |||
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IS = - 8.2 A, VGS 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 36 | 54 | ns | IF = - 8.2 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 41 | 62 | nC | IF = - 8.2 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
SI4447ADY-T1-GE3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4447ady-t1-ge3-vb-etched.step/si4447ady-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4447ady-t1-ge3-vb.step/si4447ady-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
d38516dc5fb04c03, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).