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SI4435FDY-T1-GE3

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4435FDY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4435FDY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -30 V and gate-source voltage is ±20 V.
2 S passive Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -30 V and gate-source voltage is ±20 V.
3 S passive Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -30 V and gate-source voltage is ±20 V.
4 G input Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V, with RDS(on) specified at VGS = -4.5 V and -10 V.
5 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and the drain is the junction-to-case (foot) thermal reference.
6 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and the drain is the junction-to-case (foot) thermal reference.
7 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and the drain is the junction-to-case (foot) thermal reference.
8 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and the drain is the junction-to-case (foot) thermal reference.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS -30 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -1 -2.2 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -30 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -10 μA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current ID(on) -10 A VDS -5 V, VGS = 10 V 2
Drain-source on-state resistance RDS(on) 0.015 0.019 Ω VGS = -10 V, ID = -9 A 2
Drain-source on-state resistance RDS(on) 0.023 0.03 Ω VGS = -4.5 V, ID = -7 A 2
Total gate charge Qg 28 42 nC VDS = -15 V, VGS = -10 V, ID = -5 A 2
Total gate charge Qg 13.5 21 nC VDS = -15 V, VGS = -4.5 V, ID = -5 A 2
Gate resistance Rg 0.6 3.3 6.6 Ω f = 1 MHz 2
Turn-on delay time td(on) 26 50 ns VDD = -15 V, RL = 15, ID -1 A, VGEN = -4.5 V, Rg = 1 2
Rise time tr 30 60 ns VDD = -15 V, RL = 15, ID -1 A, VGEN = -4.5 V, Rg = 1 2
Turn-off delay time td(off) 21 40 ns VDD = -15 V, RL = 15, ID -1 A, VGEN = -4.5 V, Rg = 1 2
Fall time tf 16 30 ns VDD = -15 V, RL = 15, ID -1 A, VGEN = -4.5 V, Rg = 1 2
Turn-on delay time td(on) 9 20 ns VDD = -15 V, RL = 15, ID -1 A, VGEN = -10 V, Rg = 1 2
Rise time tr 18 35 ns VDD = -15 V, RL = 15, ID -1 A, VGEN = -10 V, Rg = 1 2
Turn-off delay time td(off) 23 45 ns VDD = -15 V, RL = 15, ID -1 A, VGEN = -10 V, Rg = 1 2
Fall time tf 15 30 ns VDD = -15 V, RL = 15, ID -1 A, VGEN = -10 V, Rg = 1 2
Continuous source-drain diode current IS -4 A TC = 25 °C 2
Pulse diode forward current ISM -32 A 2
Body diode voltage VSD -0.82 -1.2 V IS = -5 A, VGS = 0 V 2
Body diode reverse recovery time trr 20 40 ns IF = -5 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 10 20 nC IF = -5 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Drain-source voltage VDS -30 V TA = 25 °C unless otherwise noted 1
Gate-source voltage VGS -20 20 V TA = 25 °C unless otherwise noted 1
Continuous drain current ID -12.6 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID -10 A TJ = 150 °C, TC = 70 °C 1
Continuous drain current ID -8.6 A TJ = 150 °C, TA = 25 °C 1
Continuous drain current ID -6.9 A TJ = 150 °C, TA = 70 °C 1
Pulsed drain current IDM -32 A t = 100 μs 1
Continuous source-drain diode current IS -4 A TC = 25 °C 1
Continuous source-drain diode current IS -1.9 A TA = 70 °C 1
Maximum power dissipation PD 4.8 W TC = 25 °C 1
Maximum power dissipation PD 3.1 W TC = 70 °C 1
Maximum power dissipation PD 2.2 W TA = 25 °C 1
Maximum power dissipation PD 1.4 W TA = 70 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 260 °C Notes d, e 1
Maximum junction-to-ambian RthJA 45 56 °C/W t ≤ 10 s 1
Maximum junction-to-case (drain) RthJF 20 26 °C/W Steady state 1
Maximum junction-to-ambient (steady state, note d) RthJA 100 °C/W Steady state, from note d 1

CAD (KiCad official)

  • Symbol: SI4435FDY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4435fdy-t1-ge3-etched.step / si4435fdy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4435fdy-t1-ge3.step / si4435fdy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 7ebff2f39e83fdaa, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF