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SI4435DYPBF-HXY
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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI4435DYPBF-HXY
HXY MOSFET · MOSFETs · SOP-8
SI4435DYPBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, with the drain-source voltage rated at -30 V and continuous drain current of -11 A at TA=25℃. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, tied in parallel with the other source pins to carry up to -11 A continuous drain current at TA=25℃. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, tied in parallel with the other source pins to carry up to -11 A continuous drain current at TA=25℃. |
| 4 | G | input | Gate terminal, rated for a gate-source voltage of ±20 V, with operation at gate voltages as low as 2.5 V and a threshold of -1 to -3 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, with a drain-source voltage rating of -30 V and RDS(ON) below 16 mΩ at VGS=-10 V. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, tied in parallel with the other drain pins, with a pulsed drain current rating of -40 A. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, tied in parallel with the other drain pins, with a pulsed drain current rating of -40 A. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, tied in parallel with the other drain pins, with total power dissipation of 2.5 W at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
SI4435DYPBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
si4435dypbf-hxy-etched.step/si4435dypbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4435dypbf-hxy.step/si4435dypbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
92e0faf4d714a0ca, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI4435DYPBF-HXY
**HXY MOSFET** · MOSFETs · SOP-8
SI4435DYPBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, with the drain-source voltage rated at -30 V and continuous drain current of -11 A at TA=25℃. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, tied in parallel with the other source pins to carry up to -11 A continuous drain current at TA=25℃. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, tied in parallel with the other source pins to carry up to -11 A continuous drain current at TA=25℃. |
| 4 | G | input | Gate terminal, rated for a gate-source voltage of ±20 V, with operation at gate voltages as low as 2.5 V and a threshold of -1 to -3 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, with a drain-source voltage rating of -30 V and RDS(ON) below 16 mΩ at VGS=-10 V. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, tied in parallel with the other drain pins, with a pulsed drain current rating of -40 A. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, tied in parallel with the other drain pins, with a pulsed drain current rating of -40 A. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, tied in parallel with the other drain pins, with total power dissipation of 2.5 W at TA=25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## CAD (KiCad official)
- Symbol: `SI4435DYPBF-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `si4435dypbf-hxy-etched.step` / `si4435dypbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si4435dypbf-hxy.step` / `si4435dypbf-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/si4435dypbf-hxy-datasheet.pdf) (7 pp, sha256 `92e0faf4d714a0ca`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si4435dypbf-hxy-datasheet.pdf)