component
SI4435DDY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6h ago |
| viewers | 6h ago |
| package.json | 6h ago |
| page.json | 6h ago |
| README.md | 6h ago |
| si4435ddy-t1-ge3-etched.glb | 6h ago |
| si4435ddy-t1-ge3-etched.step | 6h ago |
| si4435ddy-t1-ge3-hero.glb | 6h ago |
| si4435ddy-t1-ge3-hero.overlay.json | 6h ago |
| si4435ddy-t1-ge3.glb | 6h ago |
| si4435ddy-t1-ge3.kicad_mod | 6h ago |
| si4435ddy-t1-ge3.kicad_sym | 6h ago |
| si4435ddy-t1-ge3.lbr | 6h ago |
| si4435ddy-t1-ge3.step | 6h ago |
SI4435DDY-T1-GE3
Vishay Intertech · MOSFETs · SO-8
SI4435DDY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 5 | D | passive | Drain of the MOSFET; pins 5 through 8 are electrically connected together and also serve as the thermal path to the package (continuous drain current -11.4 A at TC = 25 °C). |
| 6 | D | passive | Drain of the MOSFET; pins 5 through 8 are electrically connected together and also serve as the thermal path to the package (continuous drain current -11.4 A at TC = 25 °C). |
| 7 | D | passive | Drain of the MOSFET; pins 5 through 8 are electrically connected together and also serve as the thermal path to the package (continuous drain current -11.4 A at TC = 25 °C). |
| 8 | D | passive | Drain of the MOSFET; pins 5 through 8 are electrically connected together and also serve as the thermal path to the package (continuous drain current -11.4 A at TC = 25 °C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
SI4435DDY-T1-GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4435ddy-t1-ge3-etched.step/si4435ddy-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4435ddy-t1-ge3.step/si4435ddy-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
8df7e29858048913, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).