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SI4435DDY-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4435DDY-T1-GE3-HXY
HXY MOSFET · MOSFETs · SOP-8
SI4435DDY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, with VDS rated -30 V and continuous drain current of -9 A at TA=25℃. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, with VDS rated -30 V and continuous drain current of -9 A at TA=25℃. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, with VDS rated -30 V and continuous drain current of -9 A at TA=25℃. |
| 4 | G | input | Gate terminal with maximum gate-source voltage of ±20 V and gate threshold voltage of -1 V to -3 V at ID=-250uA. |
| 5 | D | passive | Drain terminal with drain-source voltage rating of -30 V, continuous drain current of -9 A and pulsed drain current of -50 A. |
| 6 | D | passive | Drain terminal with drain-source voltage rating of -30 V, continuous drain current of -9 A and pulsed drain current of -50 A. |
| 7 | D | passive | Drain terminal with drain-source voltage rating of -30 V, continuous drain current of -9 A and pulsed drain current of -50 A. |
| 8 | D | passive | Drain terminal with drain-source voltage rating of -30 V, continuous drain current of -9 A and pulsed drain current of -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
SI4435DDY-T1-GE3-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
si4435ddy-t1-ge3-hxy-etched.step/si4435ddy-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4435ddy-t1-ge3-hxy.step/si4435ddy-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
61c23af86f5c901c, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).