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SI4435DDY-T1-E3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4435DDY-T1-E3
Vishay Intertech · MOSFETs · SO-8
SI4435DDY-T1-E3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, shown as S at pin 1 in the SO-8 top view. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, shown as S at pin 2 in the SO-8 top view. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, shown as S at pin 3 in the SO-8 top view. |
| 4 | G | passive | Gate terminal of the P-channel MOSFET, shown as G at pin 4 in the SO-8 top view, with gate-source voltage rated at ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, shown as D at pin 5 in the SO-8 top view, with drain-source voltage rated at -30 V. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, shown as D at pin 6 in the SO-8 top view, with drain-source voltage rated at -30 V. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, shown as D at pin 7 in the SO-8 top view, with drain-source voltage rated at -30 V. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, shown as D at pin 8 in the SO-8 top view, with drain-source voltage rated at -30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -30 | V | TA = 25 °C, unless otherwise noted | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | TA = 25 °C, unless otherwise noted | 1 | |
| Continuous drain current | ID | -11.4 | A | TC = 25 °C | 1 | ||
| Continuous drain current | ID | -9.1 | A | TC = 70 °C | 1 | ||
| Continuous drain current | ID | -8.1 | A | TA = 25 °C, a, b | 1 | ||
| Continuous drain current | ID | -6.5 | A | TA = 70 °C, a, b | 1 | ||
| Pulsed drain current | IDM | -50 | A | 1 | |||
| Continuous source-drain diode current | IS | -4.1 | A | TC = 25 °C | 1 | ||
| Continuous source-drain diode current | IS | -2 | A | TA = 25 °C, a, b | 1 | ||
| Avalanche current | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Single-pulse avalanche energy | EAS | 20 | mJ | 1 | |||
| Maximum power dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 3.2 | W | TC = 70 °C | 1 | ||
| Maximum power dissipation | PD | 2.5 | W | TA = 25 °C, a, b | 1 | ||
| Maximum power dissipation | PD | 1.6 | W | TA = 70 °C, a, b | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction-to-ambient thermal resistance | RthJA | 38 | 50 | °C/W | t ≤ 10 s, a, c | 1 | |
| Maximum junction-to-foot thermal resistance | RthJF | 20 | 25 | °C/W | Steady state | 1 | |
| Drain-source breakdown voltage | VDS | -30 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | -5 | μA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-state drain current | ID(on) | -30 | A | VDS -10 V, VGS = -10 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.024 | Ω | VGS = -10 V, ID = -9.1 A | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.035 | Ω | VGS = -4.5 V, ID = -6.9 A | 2 | ||
| Continuous source-drain diode current | IS | -4.1 | A | TC = 25 °C | 2 | ||
| Pulse diode forward current | ISM | -50 | A | 2 | |||
| Body diode voltage | VSD | -1.2 | V | IS = -2 A, VGS = 0 V | 2 | ||
| Body diode reverse recovery time | trr | 60 | ns | IF = -2 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | ||
| Body diode reverse recovery charge | Qrr | 40 | nC | IF = -2 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | ||
| Total gate charge | Qg | 50 | nC | VDS = -15 V, VGS = -10 V, ID = -9.1 A | 2 | ||
| Total gate charge | Qg | 25 | nC | VDS = -15 V, VGS = -4.5 V, ID = -9.1 A | 2 | ||
| Turn-on delay time | td(on) | 15 | ns | VDD = -15 V, RL = 15 Ω, ID -1 A, VGEN = -10 V, Rg = 1 Ω | 2 | ||
| Rise time | tr | 15 | ns | VDD = -15 V, RL = 15 Ω, ID -1 A, VGEN = -10 V, Rg = 1 Ω | 2 | ||
| Turn-off delay time | td(off) | 70 | ns | VDD = -15 V, RL = 15 Ω, ID -1 A, VGEN = -10 V, Rg = 1 Ω | 2 | ||
| Fall time | tf | 25 | ns | VDD = -15 V, RL = 15 Ω, ID -1 A, VGEN = -10 V, Rg = 1 Ω | 2 | ||
| Turn-on delay time | td(on) | 70 | ns | VDD = -15 V, RL = 15 Ω, ID -1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | ||
| Rise time | tr | 60 | ns | VDD = -15 V, RL = 15 Ω, ID -1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | ||
| Fall time | tf | 30 | ns | VDD = -15 V, RL = 15 Ω, ID -1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |
CAD (KiCad official)
- Symbol:
SI4435DDY-T1-E3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4435ddy-t1-e3-etched.step/si4435ddy-t1-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4435ddy-t1-e3.step/si4435ddy-t1-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
d5ba25f1e63aa1a1, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).