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SI4431CDY-T1-GE3-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4431CDY-T1-GE3-HXY

HXY MOSFET · MOSFETs · SOP-8

SI4431CDY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, rated with a drain-source voltage VDS of -30 V and an absolute maximum gate-source voltage of +20 V.
2 S passive Source terminal of the P-channel MOSFET, rated with a drain-source voltage VDS of -30 V and an absolute maximum gate-source voltage of +20 V.
3 S passive Source terminal of the P-channel MOSFET, rated with a drain-source voltage VDS of -30 V and an absolute maximum gate-source voltage of +20 V.
4 G input Gate terminal of the P-channel MOSFET, with a gate threshold voltage VGS(th) of -1 V to -3 V and a rated gate-source voltage of +20 V; the datasheet states operation with gate voltages as low as 2.5 V.
5 D passive Drain terminal of the P-channel MOSFET, rated at a continuous drain current ID of -9 A at TA=25°C (VGS = -10 V) and a pulsed drain current IDM of -50 A.
6 D passive Drain terminal of the P-channel MOSFET, rated at a continuous drain current ID of -9 A at TA=25°C (VGS = -10 V) and a pulsed drain current IDM of -50 A.
7 D passive Drain terminal of the P-channel MOSFET, rated at a continuous drain current ID of -9 A at TA=25°C (VGS = -10 V) and a pulsed drain current IDM of -50 A.
8 D passive Drain terminal of the P-channel MOSFET, rated at a continuous drain current ID of -9 A at TA=25°C (VGS = -10 V) and a pulsed drain current IDM of -50 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 18 20 mΩ VGS=-10V, ID=-7A 2
Static Drain-Source On-Resistance RDS(ON) 32 36 mΩ VGS=-4.5V, ID=-5A 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250uA 2
Drain-Source Leakage Current IDSS -30 uA VDS=-24V, VGS=0V 2
Gate-Source Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 18 29 nC ID=-7A, VDS=-24V, VGS=-4.5V 2
Input Capacitance Ciss 1175 1690 pF VGS=0V, VDS=-25V, f=1.0MHz 2
Forward On Voltage VSD -1.2 V IS=-2.1A, VGS=0V 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID@TA=25℃ -9 A VGS @ 10V 1
Drain Current ID@TA=70℃ -7.3 A VGS @ 10V 1
Pulsed Drain Current IDM -50 A 1
Total Power Dissipation PD@TA=25℃ 2.5 W 1
Linear Derating Factor 0.02 W/℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 50 ℃/W 1

CAD (KiCad official)

  • Symbol: SI4431CDY-T1-GE3-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4431cdy-t1-ge3-hxy-etched.step / si4431cdy-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4431cdy-t1-ge3-hxy.step / si4431cdy-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 29585e1b451bc369, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF