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SI4431BDY-T1-E3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4431BDY-T1-E3
Vishay Intertech · MOSFETs · SO-8
SI4431BDY-T1-E3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; continuous source (diode) current is rated -2.1 A (10 s) / -1.2 A (steady state). |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the same source terminal as pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, connected to the same source terminal as pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; maximum gate-source voltage is ±20 V with threshold of -1.0 to -3.0 V. |
| 5 | D | passive | Drain of the P-channel MOSFET; drain-source voltage rated -30 V and pulsed drain current -30 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected to the same drain terminal as pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | -3 | -1 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (70 °C) | IDSS | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VDS = - 5 V, VGS = - 10 V | 2 | ||
| On-State Drain Current | ID(on) | -7 | A | VDS = - 5 V, VGS = - 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.023 | 0.03 | Ω | VGS = - 10 V, ID = - 7.5 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.036 | 0.05 | Ω | VGS = - 4.5 V, ID = - 5.8 A | 2 | |
| Diode Forward Voltage | VSD | -0.78 | -1.1 | V | IS = - 2.1 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 13 | 20 | nC | VDS = - 15 V, VGS = - 5 V, ID = - 7.5 A | 2 | |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω | 2 | |
| Rise Time | tr | 10 | 20 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 70 | 110 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω | 2 | |
| Fall Time | tf | 47 | 70 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 45 | 80 | ns | IF = - 2.1 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | -30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current, 10 s | ID | -7.5 | A | TJ = 150 °C, TA = 25 °C, 10 s | 1 | ||
| Continuous Drain Current, Steady State | ID | -5.7 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current, 10 s | ID | -6 | A | TJ = 150 °C, TA = 70 °C, 10 s | 1 | ||
| Continuous Drain Current, Steady State | ID | -4.6 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | TA = 25 °C | 1 | ||
| Continuous Source Current, 10 s | IS | -2.1 | A | Diode conduction, 10 s | 1 | ||
| Continuous Source Current, Steady State | IS | -1.2 | A | Diode conduction, steady state | 1 | ||
| Maximum Power Dissipation, 10 s | PD | 2.5 | W | TA = 25 °C, 10 s | 1 | ||
| Maximum Power Dissipation, Steady State | PD | 1.5 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation, 10 s | PD | 1.6 | W | TA = 70 °C, 10 s | 1 | ||
| Maximum Power Dissipation, Steady State | PD | 0.9 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance, t ≤ 10 s | RthJA | 38 | 50 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance, Steady State | RthJA | 70 | 85 | °C/W | Steady State | 1 | |
| Junction-to-Foot Thermal Resistance | RthJF | 22 | 28 | °C/W | Steady State | 1 | |
| Forward Transconductance | gfs | 18 | S | VDS = - 15 V, ID = - 7.5 A | 2 |
CAD (KiCad official)
- Symbol:
SI4431BDY-T1-E3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4431bdy-t1-e3-etched.step/si4431bdy-t1-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4431bdy-t1-e3.step/si4431bdy-t1-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
700a74765f1f305b, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).