component

SI4427BDY-T1-E3-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorsi4427bdy-t1-e3-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 15d ago
viewers si4427bdy-t1-e3-hxy: viewers · Ray 15d ago
package.json Publish 0.1.0 · Ray 15d ago
page.json Set visibility: public · Ray 15d ago
README.md Publish 0.1.0 · Ray 15d ago
si4427bdy-t1-e3-hxy-etched.glb Publish 0.1.0 · Ray 15d ago
si4427bdy-t1-e3-hxy-etched.step si4427bdy-t1-e3-hxy: factory component page (tier=lcsc) · Ray 15d ago
si4427bdy-t1-e3-hxy-hero.glb si4427bdy-t1-e3-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 15d ago
si4427bdy-t1-e3-hxy-hero.overlay.json Publish 0.1.0 · Ray 15d ago
si4427bdy-t1-e3-hxy.glb Publish 0.1.0 · Ray 15d ago
si4427bdy-t1-e3-hxy.kicad_mod Publish 0.1.0 · Ray 15d ago
si4427bdy-t1-e3-hxy.kicad_sym Publish 0.1.0 · Ray 15d ago
si4427bdy-t1-e3-hxy.lbr Publish 0.1.0 · Ray 15d ago
si4427bdy-t1-e3-hxy.step Publish 0.1.0 · Ray 15d ago

SI4427BDY-T1-E3-HXY

HXY MOSFET · MOSFETs · SOP-8

SI4427BDY-T1-E3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; datasheet pin diagram shows three source pins, with VDS rated -30V.
2 S passive Source of the P-channel MOSFET; datasheet pin diagram shows three source pins, with continuous drain current of -15A at TA=25℃ for the device.
3 S passive Source of the P-channel MOSFET; datasheet pin diagram shows three source pins, tied together externally.
4 G input Gate of the P-channel MOSFET, rated ±20V gate-source with threshold of -1.2V to -2.5V and RDS(ON) specified at VGS=-10V and -4.5V.
5 D passive Drain of the P-channel MOSFET; drain-source voltage rated -30V and pulsed drain current -56A.
6 D passive Drain of the P-channel MOSFET; drain-source voltage rated -30V and pulsed drain current -56A.
7 D passive Drain of the P-channel MOSFET; drain-source voltage rated -30V and pulsed drain current -56A.
8 D passive Drain of the P-channel MOSFET; drain-source voltage rated -30V and pulsed drain current -56A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V , ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 5.8 8.7 mΩ VGS=-10V , ID=-12A 2
Static Drain-Source On-Resistance RDS(ON) 8.5 13.5 mΩ VGS=-4.5V , ID=-10A 2
Gate Threshold Voltage VGS(th) -1.2 -2.5 V VGS=VDS , ID =-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS -14 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM -56 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 2
Drain-Source Voltage VDS -30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TA=25℃ -15 A VGS @ -10V 1
Continuous Drain Current ID@TA=70℃ -11 A VGS @ -10V 1
Pulsed Drain Current IDM -56 A 1
Avalanche Current IAS -55 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient (t≦10s) RθJA 40 ℃/W t≦10s 1
Thermal Resistance Junction-Ambient RθJA 75 ℃/W 1
Thermal Resistance Junction-Case RθJC 24 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△TJ -0.018 V/℃ Reference to 25℃ , ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 5.04 mV/℃ 2
Forward Transconductance gfs 25 S VDS=-5V , ID=-12A 2
Total Gate Charge (-4.5V) Qg 30 nC VDS=-15V , VGS=-4.5V , ID=-12A 2
Gate-Source Charge Qgs 10 nC VDS=-15V , VGS=-4.5V , ID=-12A 2
Gate-Drain Charge Qgd 10.4 nC VDS=-15V , VGS=-4.5V , ID=-12A 2
Turn-On Delay Time Td(on) 9.4 ns VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A 2
Rise Time Tr 10.2 ns VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A 2
Turn-Off Delay Time Td(off) 117 ns VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A 2
Fall Time Tf 24 ns VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A 2
Input Capacitance Ciss 3448 pF VDS=-15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 508 pF VDS=-15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 421 pF VDS=-15V , VGS=0V , f=1MHz 2
Reverse Recovery Time trr 19.4 nS IF=-10A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 9.1 nC IF=-10A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SI4427BDY-T1-E3-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4427bdy-t1-e3-hxy-etched.step / si4427bdy-t1-e3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4427bdy-t1-e3-hxy.step / si4427bdy-t1-e3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 e5d8cfcdc98ab941, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF