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SI4425DDY-T1-GE3

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI4425DDY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4425DDY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the datasheet limits the continuous source-drain diode current to -4.7 A at TC = 25 °C.
2 S passive Source terminal of the P-channel MOSFET; the datasheet limits the continuous source-drain diode current to -4.7 A at TC = 25 °C.
3 S passive Source terminal of the P-channel MOSFET; the datasheet limits the continuous source-drain diode current to -4.7 A at TC = 25 °C.
4 G input Gate terminal; the datasheet specifies a gate-source voltage limit of ±20 V (VGS).
5 D passive Drain terminal; the datasheet limits drain-source voltage to -30 V and continuous drain current to -19.7 A at TC = 25 °C, and gives the drain as the thermal path (junction-to-foot).
6 D passive Drain terminal; the datasheet limits drain-source voltage to -30 V and continuous drain current to -19.7 A at TC = 25 °C, and gives the drain as the thermal path (junction-to-foot).
7 D passive Drain terminal; the datasheet limits drain-source voltage to -30 V and continuous drain current to -19.7 A at TC = 25 °C, and gives the drain as the thermal path (junction-to-foot).
8 D passive Drain terminal; the datasheet limits drain-source voltage to -30 V and continuous drain current to -19.7 A at TC = 25 °C, and gives the drain as the thermal path (junction-to-foot).

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS -30 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -1.2 -2.5 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -30 V, VGS = 0 V 2
Zero gate voltage drain current (TJ = 55 °C) IDSS -5 μA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current ID(on) -30 A VDS -5 V, VGS = -10 V 2
Drain-source on-state resistance RDS(on) 0.0081 0.0098 Ω VGS = -10 V, ID = -13 A 2
Drain-source on-state resistance RDS(on) 0.0137 0.0165 Ω VGS = -4.5 V, ID = -10 A 2
Total gate charge Qg 53 80 nC VDS = -15 V, VGS = -10 V, ID = -13 A 2
Total gate charge Qg 27 41 nC VDS = -15 V, VGS = -4.5 V, ID = -13 A 2
Gate resistance Rg 0.4 2.1 4.2 Ω f = 1 MHz 2
Turn-on delay time (VGEN = -4.5 V) td(on) 52 78 ns VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise time (VGEN = -4.5 V) tr 41 62 ns 2
Turn-off delay time (VGEN = -4.5 V) td(off) 36 54 ns 2
Fall time (VGEN = -4.5 V) tf 15 25 ns 2
Turn-on delay time (VGEN = -10 V) td(on) 12 20 ns VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω 2
Rise time (VGEN = -10 V) tr 9 15 ns 2
Turn-off delay time (VGEN = -10 V) td(off) 42 63 ns 2
Fall time (VGEN = -10 V) tf 9 15 ns 2
Continuous source-drain diode current IS -4.7 A TC = 25 °C 2
Pulse diode forward current ISM -50 A 2
Body diode voltage VSD -0.8 -1.2 V IS = -10 A, VGS = 0 V 2
Body diode reverse recovery time trr 20 30 ns IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 10 20 nC 2
Drain-source voltage VDS -30 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID -19.7 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID -15.7 A TJ = 150 °C, TC = 70 °C 1
Continuous drain current ID -13 A TJ = 150 °C, TA = 25 °C (notes b, c) 1
Continuous drain current ID -10.4 A TJ = 150 °C, TA = 70 °C (notes b, c) 1
Pulsed drain current IDM -50 A 1
Continuous source-drain diode current IS -4.7 A TC = 25 °C 1
Continuous source-drain diode current IS -2.1 A TA = 25 °C (notes b, c) 1
Maximum power dissipation PD 5.7 W TC = 25 °C 1
Maximum power dissipation PD 3.6 W TC = 70 °C 1
Maximum power dissipation PD 2.5 W TA = 25 °C (notes b, c) 1
Maximum power dissipation PD 1.6 W TA = 70 °C (notes b, c) 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 35 50 °C/W t 10 s (notes b, d) 1
Maximum junction-to-foot (drain) RthJF 18 22 °C/W Steady state 1

CAD (KiCad official)

  • Symbol: SI4425DDY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4425ddy-t1-ge3-etched.step / si4425ddy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4425ddy-t1-ge3.step / si4425ddy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 dcac6cf5d5a4768a, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF