component
SI4410BDY-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4410BDY-T1-GE3-HXY
HXY MOSFET · MOSFETs · SOP-8
SI4410BDY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied to pins 2 and 3; gate-source voltage is limited to ±20V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied to pins 1 and 3; gate-source voltage is limited to ±20V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied to pins 1 and 2; gate-source voltage is limited to ±20V. |
| 4 | G | input | Gate of the N-channel MOSFET, rated ±20V maximum gate-source voltage, with RDS(ON) below 18mΩ at VGS=10V and gate drive usable down to 4.5V. |
| 5 | D | passive | Drain terminal tied to pins 6-8, rated 30V drain-source voltage and 8.5A continuous drain current at TA=25℃. |
| 6 | D | passive | Drain terminal tied to pins 5, 7 and 8, rated 30V drain-source voltage and 8.5A continuous drain current at TA=25℃. |
| 7 | D | passive | Drain terminal tied to pins 5, 6 and 8, rated 30V drain-source voltage and 8.5A continuous drain current at TA=25℃. |
| 8 | D | passive | Drain terminal tied to pins 5-7, rated 30V drain-source voltage and 8.5A continuous drain current at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
SI4410BDY-T1-GE3-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
si4410bdy-t1-ge3-hxy-etched.step/si4410bdy-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4410bdy-t1-ge3-hxy.step/si4410bdy-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
11e29470acf09726, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).