SI4401BDY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source of the P-channel MOSFET (pin 1 of 3 tied source pins); VDS rated -40 V and continuous drain current up to -16.1 A at TC = 25 °C.
2	S	passive	Source of the P-channel MOSFET (pin 2 of 3 tied source pins); VDS rated -40 V and continuous drain current up to -16.1 A at TC = 25 °C.
3	S	passive	Source of the P-channel MOSFET (pin 3 of 3 tied source pins); VDS rated -40 V and continuous drain current up to -16.1 A at TC = 25 °C.
4	G	input	Gate of the P-channel MOSFET; absolute maximum gate-source voltage ±20 V with threshold of -1.2 V to -2.5 V.
5	D	passive	Drain of the P-channel MOSFET (pin 1 of 4 tied drain pins); RDS(on) 0.010 Ω at VGS = -10 V and pulsed drain current up to -50 A.
6	D	passive	Drain of the P-channel MOSFET (pin 2 of 4 tied drain pins); RDS(on) 0.010 Ω at VGS = -10 V and pulsed drain current up to -50 A.
7	D	passive	Drain of the P-channel MOSFET (pin 3 of 4 tied drain pins); RDS(on) 0.010 Ω at VGS = -10 V and pulsed drain current up to -50 A.
8	D	passive	Drain of the P-channel MOSFET (pin 4 of 4 tied drain pins); RDS(on) 0.010 Ω at VGS = -10 V and pulsed drain current up to -50 A.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Transistors/Thyristors
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS	-40			V		1
Gate-Source Voltage	VGS	-20		20	V		1
Pulsed Drain Current	IDM	-50			A		1
Single Pulse Avalanche Current	IAS	-28			A	L = 0.1 mH	1
Single Pulse Avalanche Energy	EAS			39	mJ	L = 0.1 mH	1
Continuous Drain Current	ID	-16.1			A	TC = 25 °C, TJ = 150 °C	1
Maximum Power Dissipation	PD			6.3	W	TC = 25 °C	1
Operating Junction and Storage Temperature	TJ, Tstg	-55		150	°C		1
Junction-to-Ambient Thermal Resistance	RthJA		37	50	°C/W	t ≤ 10 s	1
Junction-to-Foot Thermal Resistance	RthJF		16	20	°C/W	Steady State	1
Drain-Source Breakdown Voltage	VDS	-40			V	VGS = 0 V, ID = - 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	-2.5		-1.2	V	VDS = VGS, ID = - 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			-1	µA	VDS = - 40 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			-5	µA	VDS = - 40 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	-25			A	VDS ≤ - 5 V, VGS = - 10 V	2
Gate Resistance	Rg	0.4	2	4	Ω	f = 1 MHz	2
Total Gate Charge	Qg		64	95	nC	VDS = - 20 V, VGS = - 10 V, ID = - 10.2 A	2
Total Gate Charge	Qg		33	50	nC	VDS = - 20 V, VGS = - 4.5 V, ID = - 10.2 A	2
Turn-On Delay Time	td(on)		57	86	ns	VDD = - 20 V, RL = 2.4 Ω, VGEN = - 4.5 V, Rg = 1 Ω	2
Rise Time	tr		50	75	ns	VDD = - 20 V, RL = 2.4 Ω, VGEN = - 4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		40	60	ns	VDD = - 20 V, RL = 2.4 Ω, VGEN = - 4.5 V, Rg = 1 Ω	2
Fall Time	tf		17	26	ns	VDD = - 20 V, RL = 2.4 Ω, VGEN = - 4.5 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		13	20	ns	VDD = - 20 V, RL = 2.4 Ω, VGEN = - 10 V, Rg = 1 Ω	2
Rise Time	tr		11	20	ns	VDD = - 20 V, RL = 2.4 Ω, VGEN = - 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		45	68	ns	VDD = - 20 V, RL = 2.4 Ω, VGEN = - 10 V, Rg = 1 Ω	2
Fall Time	tf		9	18	ns	VDD = - 20 V, RL = 2.4 Ω, VGEN = - 10 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			-5.3	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			-50	A		2
Body Diode Voltage	VSD		-0.8	-1.2	V	IS = - 8.2 A, VGS = 0 V	2
Body Diode Reverse Recovery Charge	Qrr		41	62	nC	IF = - 8.2 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Drain-Source On-State Resistance	RDS(on)		0.01		Ω	VGS = - 10 V, ID = - 10.2 A	2
Drain-Source On-State Resistance	RDS(on)		0.014		Ω	VGS = - 4.5 V, ID = - 8.4 A	2
Forward Transconductance	gfs		37		S	VDS = - 15 V, ID = - 10.2 A	2
Input Capacitance	Ciss		3007		pF	VDS = - 20 V, VGS = 0 V, f = 1 MHz	2
Output Capacitance	Coss		335		pF	VDS = - 20 V, VGS = 0 V, f = 1 MHz	2
Reverse Transfer Capacitance	Crss		291		pF	VDS = - 20 V, VGS = 0 V, f = 1 MHz	2

CAD (KiCad official)

Symbol: SI4401BDY-T1-E3-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: si4401bdy-t1-e3-vb-etched.step / si4401bdy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4401bdy-t1-e3-vb.step / si4401bdy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 6e4f313318b14f07, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

SI4401BDY-T1-E3-VB

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3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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