component
Si4286DY-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSi4286DY-T1-GE3-VB
VBsemi Elec · MOSFETs · SO-8
Si4286DY-T1-GE3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET leg 1; continuous source (diode conduction) current IS is rated 3.6 A in the absolute maximum ratings. |
| 2 | G1 | input | Gate of N-channel MOSFET leg 1; gate-source voltage VGS is limited to ±20 V. |
| 3 | S2 | passive | Source of N-channel MOSFET leg 2; continuous source (diode conduction) current IS is rated 3.6 A in the absolute maximum ratings. |
| 4 | G2 | input | Gate of N-channel MOSFET leg 2; gate-source voltage VGS is limited to ±20 V. |
| 5 | D2 | passive | Drain of N-channel MOSFET leg 2; drain-source voltage VDS is rated 60 V. Pin label inferred from the extracted text and the standard SO-8 dual pinout; not clearly printed, see review_required. |
| 6 | D2 | passive | Drain of N-channel MOSFET leg 2; drain-source voltage VDS is rated 60 V. Pin label inferred from the extracted text and the standard SO-8 dual pinout; not clearly printed, see review_required. |
| 7 | D1 | passive | Drain of N-channel MOSFET leg 1; drain-source voltage VDS is rated 60 V and continuous drain current ID is 7 A at TC = 25 °C. Pin label inferred from the extracted text and the standard SO-8 dual pinout; not clearly printed, see review_required. |
| 8 | D1 | passive | Drain of N-channel MOSFET leg 1; drain-source voltage VDS is rated 60 V and continuous drain current ID is 7 A at TC = 25 °C. Pin label inferred from the extracted text and the standard SO-8 dual pinout; not clearly printed, see review_required. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 7 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 4 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 3.6 | A | 1 | |||
| Pulsed Drain Current | IDM | 28 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | 18 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 16.2 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 4 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient (PCB Mount) | RthJA | 110 | °C/W | PCB Mount | 1 | ||
| Junction-to-Foot (Drain) | RthJF | 34 | °C/W | Drain | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 60 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 150 | μA | VGS = 0 V, VDS = 60 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Gate Resistance | Rg | 1.3 | 6 | Ω | f = 1 MHz | 2 | |
| Output Capacitance | Coss | 110 | 140 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 50 | 62 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | |
| Gate-Source Charge | Qgs | 1.8 | 2.7 | nC | VGS = 10 V, VDS = 30 V, ID = 5.3 A | 2 | |
| Gate-Drain Charge | Qgd | 2.8 | 4.2 | nC | VGS = 10 V, VDS = 30 V, ID = 5.3 A | 2 | |
| Turn-On Delay Time | td(on) | 7 | 11 | ns | VDD = 30 V, RL = 6.8 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 22.4 | 33.5 | ns | 2 | ||
| Fall Time | tf | 2.1 | 3.2 | ns | 2 | ||
| Pulsed Current (Source-Drain Diode) | ISM | 28 | A | 2 | |||
| Forward Voltage | VSD | 0.75 | 1.1 | V | IF = 2 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
Si4286DY-T1-GE3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4286dy-t1-ge3-vb-etched.step/si4286dy-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4286dy-t1-ge3-vb.step/si4286dy-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
96275ebbe5754e96, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).