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SI4214DDY-T1-E3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4214DDY-T1-E3-VB

VBsemi Elec · MOSFETs · SO-8

SI4214DDY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1 (Top View pin 1).
2 G1 input Gate of N-channel MOSFET 1, rated at ±20 V VGS maximum.
3 S2 passive Source of N-channel MOSFET 2.
4 G2 input Gate of N-channel MOSFET 2, rated at ±20 V VGS maximum.
5 D2 passive Drain of N-channel MOSFET 2, rated at 30 V VDS maximum.
6 D2 passive Drain of N-channel MOSFET 2, rated at 30 V VDS maximum (tied to pin 5).
7 D1 passive Drain of N-channel MOSFET 1, rated at 30 V VDS maximum.
8 D1 passive Drain of N-channel MOSFET 1, rated at 30 V VDS maximum (tied to pin 7).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 8.5 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID 7.5 A TC = 70 °C 1
Continuous Drain Current ID 7.2 A TA = 25 °C (b, c) 1
Continuous Drain Current ID 5.9 A TA = 70 °C (b, c) 1
Pulsed Drain Current IDM 30 A 1
Source-Drain Diode Current IS 2.8 A TC = 25 °C 1
Source-Drain Diode Current IS 1.8 A TA = 25 °C (b, c) 1
Pulsed Source-Drain Current ISM 30 A 1
Single Pulse Avalanche Current IAS 10 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 5 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 3.1 W TC = 25 °C 1
Maximum Power Dissipation PD 2 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W TA = 70 °C (b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 52 62.5 °C/W t ≤ 10 s, surface mounted on 1" x 1" FR4 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 30 40 °C/W Steady-State 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS = 5 V, VGS = 10 V 2
Total Gate Charge Qg 14.5 22 nC VDS = 15 V, VGS = 10 V, ID = 8 A 2
Gate Resistance Rg 0.5 2.6 5.2 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 14 28 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 45 80 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 18 35 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 12 24 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 7 14 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 10 20 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 15 30 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 7 14 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.8 A TC = 25 °C 2
Pulse Diode Forward Current ISM 30 A 2
Body Diode Voltage VSD 0.77 1.1 V IS = 2 A 2
Body Diode Reverse Recovery Time trr 17 34 ns IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 9 18 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source On-State Resistance RDS(on) 0.016 Ω VGS = 10 V, ID = 8 A 2
Drain-Source On-State Resistance RDS(on) 0.02 Ω VGS = 4.5 V, ID = 5 A 2
Forward Transconductance gfs 27 S VDS = 15 V, ID = 8 A 2
Input Capacitance Ciss 660 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 140 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 86 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
VDS Temperature Coefficient ΔVDS/TJ 3 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -5.2 mV/°C ID = 250 µA 2

CAD (KiCad official)

  • Symbol: SI4214DDY-T1-E3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4214ddy-t1-e3-vb-etched.step / si4214ddy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4214ddy-t1-e3-vb.step / si4214ddy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 11132ef21bf1d479, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF