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SI4204DY-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4204DY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4204DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1; the device is rated for VDS of 20 V maximum.
2 G1 input Gate of N-channel MOSFET 1; VGS is rated at ±20 V maximum.
3 S2 passive Source of N-channel MOSFET 2; the device is rated for VDS of 20 V maximum.
4 G2 input Gate of N-channel MOSFET 2; VGS is rated at ±20 V maximum.
5 D2 passive Drain of N-channel MOSFET 2; the device is rated for VDS of 20 V maximum.
6 D2 passive Drain of N-channel MOSFET 2 (second drain pin, internally common with pin 5); VDS rated at 20 V maximum.
7 D1 passive Drain of N-channel MOSFET 1; the device is rated for VDS of 20 V maximum.
8 D1 passive Drain of N-channel MOSFET 1 (second drain pin, internally common with pin 7); VDS rated at 20 V maximum.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 19.8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 15.9 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 15.5 A TA = 25 °C (notes b, c) 1
Continuous Drain Current ID 12.2 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM 50 A 10 µs pulse width 1
Source-Drain Current Diode Current IS 2.7 A TC = 25 °C 1
Source-Drain Current Diode Current IS 1.6 A TA = 25 °C (notes b, c) 1
Pulsed Source-Drain Current ISM 50 A 1
Single Pulse Avalanche Current IAS 20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 20 1
Maximum Power Dissipation PD 3.25 W TC = 25 °C 1
Maximum Power Dissipation PD 2.1 W TC = 70 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 1.25 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 45 62.5 °C/W t ≤ 10 s (notes b, d) 1
Maximum Junction-to-Foot (Drain) Steady-State RthJF 29 38 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 20 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 2.4 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.0038 0.0046 Ω VGS = 10 V, ID = 10 A 2
Drain-Source On-State Resistance RDS(on) 0.0047 0.006 Ω VGS = 4.5 V, ID = 8 A 2
Total Gate Charge Qg 30 45 nC VDS = 10 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge Qg 14.5 22 nC VDS = 10 V, VGS = 4.5 V, ID = 10 A 2
Gate Resistance Rg 0.4 1.4 2.8 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 8 16 ns VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 15 30 ns VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 24 45 ns VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 18 35 ns VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 24 45 ns VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 26 50 ns VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 13 26 ns VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.7 A TC = 25 °C 2
Pulse Diode Forward Current ISM 50 A 2
Body Diode Voltage VSD 0.7 1.2 V IS = 3 A 2
Body Diode Reverse Recovery Time trr 20 40 ns IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 10 20 nC IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4204DY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4204dy-t1-ge3-etched.step / si4204dy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4204dy-t1-ge3.step / si4204dy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 c002546d54d846d4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF