component

SI4202DY-T1-GE3-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi4202dy-t1-ge3-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 11d ago
viewers si4202dy-t1-ge3-hxy: viewers · Ray 11d ago
package.json Publish 0.1.0 · Ray 11d ago
page.json Set visibility: public · Ray 11d ago
README.md Publish 0.1.0 · Ray 11d ago
si4202dy-t1-ge3-hxy-etched.glb Publish 0.1.0 · Ray 11d ago
si4202dy-t1-ge3-hxy-etched.step si4202dy-t1-ge3-hxy: factory component page (tier=lcsc) · Ray 11d ago
si4202dy-t1-ge3-hxy-hero.glb si4202dy-t1-ge3-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 11d ago
si4202dy-t1-ge3-hxy-hero.overlay.json Publish 0.1.0 · Ray 11d ago
si4202dy-t1-ge3-hxy.glb Publish 0.1.0 · Ray 11d ago
si4202dy-t1-ge3-hxy.kicad_mod Publish 0.1.0 · Ray 11d ago
si4202dy-t1-ge3-hxy.kicad_sym Publish 0.1.0 · Ray 11d ago
si4202dy-t1-ge3-hxy.lbr Publish 0.1.0 · Ray 11d ago
si4202dy-t1-ge3-hxy.step Publish 0.1.0 · Ray 11d ago

SI4202DY-T1-GE3-HXY

HXY MOSFET · MOSFETs · SOP-8

SI4202DY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of N-channel MOSFET 1; the datasheet's absolute maximum VGS is ±20 V and VDS is 30 V.
2 G1 input Gate of N-channel MOSFET 1; VGS is rated ±20 V and the gate threshold VGS(th) is 1.0 V min, 1.5 V typ, 2.5 V max at ID=250 µA.
3 S2 passive Source terminal of N-channel MOSFET 2; the datasheet's absolute maximum VGS is ±20 V and VDS is 30 V.
4 G2 input Gate of N-channel MOSFET 2; VGS is rated ±20 V and the gate threshold VGS(th) is 1.0 V min, 1.5 V typ, 2.5 V max at ID=250 µA.
5 D2 passive Drain terminal of N-channel MOSFET 2; the datasheet rates VDS at 30 V and ID at 11.5 A (TA=25 °C).
6 D2 passive Drain terminal of N-channel MOSFET 2 (internally tied to pin 5); the datasheet rates VDS at 30 V and ID at 11.5 A (TA=25 °C).
7 D1 passive Drain terminal of N-channel MOSFET 1; the datasheet rates VDS at 30 V and ID at 11.5 A (TA=25 °C).
8 D1 passive Drain terminal of N-channel MOSFET 1 (internally tied to pin 7); the datasheet rates VDS at 30 V and ID at 11.5 A (TA=25 °C).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 10 13 mΩ VGS=10V, ID=10A 2
Static Drain-Source on-Resistance RDS(on) 16 22.5 mΩ VGS=4.5V, ID=5A 2
Maximum Continuous Drain to Source Diode Forward Current IS 11.5 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 72 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=18A 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID@TA=25℃ 11.5 A VGS @ 4.5V, TA=25℃ 1
Drain Current ID@TA=70℃ 7.8 A VGS @ 4.5V, TA=70℃ 1
Pulsed Drain Current IDM 42 A 1
Total Power Dissipation PD@TA=25℃ 3.2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W Junction-ambient, note 3 1

CAD (KiCad official)

  • Symbol: SI4202DY-T1-GE3-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4202dy-t1-ge3-hxy-etched.step / si4202dy-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4202dy-t1-ge3-hxy.step / si4202dy-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 10a7745f4cbf62a8, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF