component
SI4186DY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si4186dy-t1-ge3: specified limits as data (metadata.characteristics, 43 rows from the datasheet)
2 files changed
+574−1
README.md+50@@ -26,6 +26,56 @@ SI4186DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions ex | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 20 | V | | 1 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous drain current | ID | | | 35.8 | A | TJ = 150 °C; TC = 25 °C | 1 |+| Continuous drain current | ID | | | 26.5 | A | TJ = 150 °C; TC = 70 °C | 1 |+| Continuous drain current | ID | | | 25.3 | A | TJ = 150 °C; TA = 25 °C (notes b, c) | 1 |+| Continuous drain current | ID | | | 20.1 | A | TJ = 150 °C; TA = 70 °C (notes b, c) | 1 |+| Pulsed drain current | IDM | | | 70 | A | | 1 |+| Continuous source-drain diode current | IS | | | 5.4 | A | TC = 25 °C | 1 |+| Continuous source-drain diode current | IS | | | 2.7 | A | TA = 25 °C (notes b, c) | 1 |+| Single pulse avalanche current | IAS | | | 30 | A | L = 0.1 mH | 1 |+| Avalanche energy | EAS | | | 45 | mJ | | 1 |+| Maximum power dissipation | PD | | | 6 | W | TC = 25 °C | 1 |+| Maximum power dissipation | PD | | | 3.3 | W | TC = 70 °C | 1 |+| Maximum power dissipation | PD | | | 3 | W | TA = 25 °C (notes b, c) | 1 |+| Maximum power dissipation | PD | | | 1.9 | W | TA = 70 °C (notes b, c) | 1 |+| Operating junction and storage temperature range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum junction-to-ambient (t ≤ 10 s) | RthJA | | 33 | 42 | °C/W | t ≤ 10 s (notes b, d) | 1 |+| Maximum junction-to-ambient (steady state) | RthJA | | | 85 | °C/W | Steady state (printed in note d) | 1 |+| Maximum junction-to-foot (drain), steady state | RthJF | | 16 | 21 | °C/W | Steady state | 1 |+| Drain-source breakdown voltage | VDS | 20 | | | V | VGS = 0 V, ID = 250 μA | 2 |+| Gate-source threshold voltage | VGS(th) | 1.2 | | 2.4 | V | VDS = VGS, ID = 250 μA | 2 |+| Gate-source leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |+| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS = 20 V, VGS = 0 V | 2 |+| Zero gate voltage drain current | IDSS | | | 10 | μA | VDS = 20 V, VGS = 0 V, TJ = 55 °C | 2 |+| On-state drain current | ID(on) | 30 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |+| Drain-source on-state resistance | RDS(on) | | 0.0021 | 0.0026 | Ω | VGS = 10 V, ID = 15 A | 2 |+| Drain-source on-state resistance | RDS(on) | | 0.0026 | 0.0032 | Ω | VGS = 4.5 V, ID = 10 A | 2 |+| Gate resistance | Rg | 0.3 | 1.2 | 2.4 | Ω | f = 1 MHz | 2 |+| Total gate charge | Qg | | 60 | 90 | nC | VDS = 10 V, VGS = 10 V, ID = 10 A | 2 |+| Total gate charge | Qg | | 28.7 | 44 | nC | VDS = 10 V, VGS = 4.5 V, ID = 10 A | 2 |+| Turn-on delay time | td(on) | | 29 | 55 | ns | VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Rise time | tr | | 16 | 30 | ns | VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Turn-off delay time | td(off) | | 40 | 75 | ns | VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Fall time | tf | | 13 | 26 | ns | VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Turn-on delay time | td(on) | | 12 | 24 | ns | VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Rise time | tr | | 9 | 18 | ns | VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Turn-off delay time | td(off) | | 32 | 60 | ns | VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Fall time | tf | | 9 | 18 | ns | VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Continuous source-drain diode current | IS | | | 5.4 | A | TC = 25 °C | 2 |+| Pulse diode forward current | ISM | | | 70 | A | | 2 |+| Body diode voltage | VSD | | 0.74 | 1.1 | V | IS = 4 A | 2 |+| Body diode reverse recovery time | trr | | 30 | 60 | ns | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |+| Body diode reverse recovery charge | Qrr | | 20 | 40 | nC | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |+ ## CAD (KiCad official) - Symbol: `SI4186DY-T1-GE3`
page.json+524−1@@ -180,6 +180,529 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "2d51f5dc432baa15",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 35.8,+ "conditions": "TJ = 150 °C; TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 26.5,+ "conditions": "TJ = 150 °C; TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 25.3,+ "conditions": "TJ = 150 °C; TA = 25 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20.1,+ "conditions": "TJ = 150 °C; TA = 70 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous source-drain diode current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.4,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous source-drain diode current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.7,+ "conditions": "TA = 25 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.3,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "TA = 25 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.9,+ "conditions": "TA = 70 °C (notes b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum junction-to-ambient (t ≤ 10 s)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 33,+ "max": 42,+ "conditions": "t ≤ 10 s (notes b, d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum junction-to-ambient (steady state)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 85,+ "conditions": "Steady state (printed in note d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum junction-to-foot (drain), steady state",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 16,+ "max": 21,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": null,+ "max": 2.4,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 20 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 20 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state drain current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VDS ≥ 5 V, VGS = 10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.0021,+ "max": 0.0026,+ "conditions": "VGS = 10 V, ID = 15 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.0026,+ "max": 0.0032,+ "conditions": "VGS = 4.5 V, ID = 10 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.3,+ "typ": 1.2,+ "max": 2.4,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 60,+ "max": 90,+ "conditions": "VDS = 10 V, VGS = 10 V, ID = 10 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 28.7,+ "max": 44,+ "conditions": "VDS = 10 V, VGS = 4.5 V, ID = 10 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 29,+ "max": 55,+ "conditions": "VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": 30,+ "conditions": "VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 40,+ "max": 75,+ "conditions": "VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 26,+ "conditions": "VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 24,+ "conditions": "VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 18,+ "conditions": "VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 32,+ "max": 60,+ "conditions": "VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 18,+ "conditions": "VDD = 10 V, RL = 1 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous source-drain diode current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.4,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulse diode forward current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.74,+ "max": 1.1,+ "conditions": "IS = 4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 30,+ "max": 60,+ "conditions": "IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 20,+ "max": 40,+ "conditions": "IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -221,4 +744,4 @@ "visibility": { "public": true }-}+}