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SI4168DY-T1-E3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi4168dy-t1-e3-vbfactory-2.0.0extractor-text

Verified SI4168DY-T1-E3-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SI4168DY-T1-E3-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-js1s95uq/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ si4168dy-t1-e3-vb.kicad_sym✓ si4168dy-t1-e3-vb.kicad_mod✓ si4168dy-t1-e3-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 9d ago
viewers si4168dy-t1-e3-vb: viewers · Ray 9d ago
package.json Publish 0.1.0 · Ray 9d ago
page.json Set visibility: public · Ray 9d ago
README.md Publish 0.1.0 · Ray 9d ago
si4168dy-t1-e3-vb-etched.glb Publish 0.1.0 · Ray 9d ago
si4168dy-t1-e3-vb-etched.step si4168dy-t1-e3-vb: factory component page (tier=lcsc) · Ray 9d ago
si4168dy-t1-e3-vb-hero.glb si4168dy-t1-e3-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 9d ago
si4168dy-t1-e3-vb-hero.overlay.json Publish 0.1.0 · Ray 9d ago
si4168dy-t1-e3-vb.glb Publish 0.1.0 · Ray 9d ago
si4168dy-t1-e3-vb.kicad_mod Publish 0.1.0 · Ray 9d ago
si4168dy-t1-e3-vb.kicad_sym Publish 0.1.0 · Ray 9d ago
si4168dy-t1-e3-vb.lbr Publish 0.1.0 · Ray 9d ago
si4168dy-t1-e3-vb.step Publish 0.1.0 · Ray 9d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 9d ago

SI4168DY-T1-E3-VB

VBsemi Elec · MOSFETs · SO-8

SI4168DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, tied with pins 2 and 3; continuous source current (diode conduction) is 2.9 A for 10 s and 1.3 A steady state.
2 S passive Source terminal of the N-channel MOSFET, tied with pins 1 and 3; continuous source current (diode conduction) is 2.9 A for 10 s and 1.3 A steady state.
3 S passive Source terminal of the N-channel MOSFET, tied with pins 1 and 2; continuous source current (diode conduction) is 2.9 A for 10 s and 1.3 A steady state.
4 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V with a threshold of 1.0 V min to 3.0 V max at 250 µA.
5 D passive Drain terminal, tied with pins 6, 7 and 8; drain-source voltage is rated 30 V and pulsed drain current is 70 A.
6 D passive Drain terminal, tied with pins 5, 7 and 8; drain-source voltage is rated 30 V and pulsed drain current is 70 A.
7 D passive Drain terminal, tied with pins 5, 6 and 8; drain-source voltage is rated 30 V and pulsed drain current is 70 A.
8 D passive Drain terminal, tied with pins 5, 6 and 7; drain-source voltage is rated 30 V and pulsed drain current is 70 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 30 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.003 Ω VGS = 10 V, ID = 25 A 2
Drain-Source On-State Resistance RDS(on) 0.004 Ω VGS = 4.5 V, ID = 22 A 2
Forward Transconductance gfs 110 S VDS = 15 V, ID = 25 A 2
Diode Forward Voltage VSD 0.72 1.1 V IS = 2.9 A, VGS = 0 V 2
Total Gate Charge Qg 45 70 nC VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Turn-On Delay Time td(on) 27 40 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Rise Time tr 21 35 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 107 160 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Fall Time tf 43 65 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 45 70 ns IF = 2.9 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current, 10 s ID 25 A TJ = 150 °C, TA = 25 °C, 10 s 1
Continuous Drain Current, Steady State ID 17 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current, 10 s ID 20 A TJ = 150 °C, TA = 70 °C, 10 s 1
Continuous Drain Current, Steady State ID 13 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM 70 A 10 µs pulse width 1
Continuous Source Current, 10 s IS 2.9 A Diode conduction, 10 s 1
Continuous Source Current, Steady State IS 1.3 A Diode conduction, steady state 1
Avalanche Current IAS 50 A 1
Maximum Power Dissipation, 10 s PD 3.5 W TA = 25 °C, 10 s 1
Maximum Power Dissipation, Steady State PD 1.6 W TA = 25 °C, steady state 1
Maximum Power Dissipation, 10 s PD 2.2 W TA = 70 °C, 10 s 1
Maximum Power Dissipation, Steady State PD 1 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance, 10 s RthJA 29 35 °C/W t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance, Steady State RthJA 67 80 °C/W Steady state 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 13 16 °C/W Steady state 1
Input Capacitance Ciss 6500 pF VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Output Capacitance Coss 930 pF VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Reverse Transfer Capacitance Crss 610 pF VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Gate-Source Charge Qgs 20 nC VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Gate-Drain Charge Qgd 16 nC VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Gate Resistance Rg 1.1 Ω f = 1.0 MHz 2

CAD (KiCad official)

  • Symbol: SI4168DY-T1-E3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4168dy-t1-e3-vb-etched.step / si4168dy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4168dy-t1-e3-vb.step / si4168dy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 b4d069d225f0f852, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF