component
SI4160DY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"schema_version": 1,
"type": "component",
"slug": "si4160dy-t1-ge3",
"title": "SI4160DY-T1-GE3",
"brief": "Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"si4160dy-t1-ge3",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "SI4160DY-T1-GE3",
"manufacturer": "Vishay Intertech",
"package": "SO-8",
"pin_count": 8,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588945228472860672",
"parts": {
"symbol": "si4160dy-t1-ge3.kicad_sym",
"footprint": "si4160dy-t1-ge3.kicad_mod",
"model_3d": "si4160dy-t1-ge3-hero.glb",
"model_3d_plain": "si4160dy-t1-ge3-etched.glb",
"model_3d_step": "si4160dy-t1-ge3-etched.step",
"model_3d_step_plain": "si4160dy-t1-ge3.step",
"lbr": "si4160dy-t1-ge3.lbr"
},
"distributor_links": {
"lcsc": "C2837209"
},
"distributor_check": {
"checked_at": "2026-10-18T15:23:07Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "S",
"type": "passive",
"description": "Source terminal of the N-channel MOSFET, rated within the 30 V drain-source and ±20 V gate-source absolute maximum ratings."
},
{
"number": "2",
"name": "S",
"type": "passive",
"description": "Source terminal of the N-channel MOSFET, rated within the 30 V drain-source and ±20 V gate-source absolute maximum ratings."
},
{
"number": "3",
"name": "S",
"type": "passive",
"description": "Source terminal of the N-channel MOSFET, rated within the 30 V drain-source and ±20 V gate-source absolute maximum ratings."
},
{
"number": "4",
"name": "G",
"type": "input",
"description": "Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±20 V per the absolute maximum ratings."
},
{
"number": "5",
"name": "D",
"type": "passive",
"description": "Drain terminal of the N-channel MOSFET; continuous drain current is 25.4 A at TC = 25 °C and pulsed drain current is 70 A."
},
{
"number": "6",
"name": "D",
"type": "passive",
"description": "Drain terminal of the N-channel MOSFET; continuous drain current is 25.4 A at TC = 25 °C and pulsed drain current is 70 A."
},
{
"number": "7",
"name": "D",
"type": "passive",
"description": "Drain terminal of the N-channel MOSFET; continuous drain current is 25.4 A at TC = 25 °C and pulsed drain current is 70 A."
},
{
"number": "8",
"name": "D",
"type": "passive",
"description": "Drain terminal of the N-channel MOSFET; continuous drain current is 25.4 A at TC = 25 °C and pulsed drain current is 70 A."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet gives only the pin labels (S, G, D) in the SO-8 top-view diagram. It does not give per; The top-view diagram lists pins 1-3 as S, pin 4 as G, and pins 5-8 as D. The drain pins are the 5-8 "
],
"pages_sent": 9,
"cost_usd": 0.0519,
"at": "2026-10-18T15:20:45"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588945228472860672",
"pages": 9,
"sha256": "10c36e11b4a643a4",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 8,
"described": 8,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "si4160dy-t1-ge3.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
6,
4.9,
1.75
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "si4160dy-t1-ge3-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
6,
4.9,
1.75
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "22fae6ec56066d1f7782bcf1311b8f09b85c8abec37e32c478301464eaaeb5c1",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "Vishay Intertech",
"Package": "SO-8",
"Category": "Transistors/Thyristors",
"Pins": "8"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "10c36e11b4a643a463a33c5c98b63b827ed162f374c5f6aea03b7f8aebec20ef",
"rows": [
{
"name": "Gate-source threshold voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 1,
"typ": null,
"max": 2.4,
"conditions": "VDS = VGS, ID = 250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-source breakdown voltage",
"symbol": "VDS",
"kind": "electrical",
"unit": "V",
"min": 30,
"typ": null,
"max": null,
"conditions": "VGS = 0 V, ID = 250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-source leakage",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VDS = 0 V, VGS = ± 20 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS = 30 V, VGS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 10,
"conditions": "VDS = 30 V, VGS = 0 V, TJ = 55 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "On-state drain current",
"symbol": "ID(on)",
"kind": "electrical",
"unit": "A",
"min": 30,
"typ": null,
"max": null,
"conditions": "VDS ≥ 5 V, VGS = 10 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-source on-state resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 0.004,
"max": 0.0049,
"conditions": "VGS = 10 V, ID = 15 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-source on-state resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 0.0051,
"max": 0.0063,
"conditions": "VGS = 4.5 V, ID = 10 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Total gate charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 36,
"max": 54,
"conditions": "VDS = 15 V, VGS = 10 V, ID = 10 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Total gate charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 16.8,
"max": 25.5,
"conditions": "VDS = 15 V, VGS = 4.5 V, ID = 10 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate resistance",
"symbol": "Rg",
"kind": "electrical",
"unit": "Ω",
"min": 0.2,
"typ": 0.85,
"max": 1.7,
"conditions": "f = 1 MHz",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-on delay time",
"symbol": "td(on)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 25,
"max": 45,
"conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 4.5 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Rise time",
"symbol": "tr",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 16,
"max": 30,
"conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 4.5 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-off delay time",
"symbol": "td(off)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 28,
"max": 50,
"conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 4.5 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Fall time",
"symbol": "tf",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 12,
"max": 24,
"conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 4.5 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-on delay time",
"symbol": "td(on)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 10,
"max": 20,
"conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Rise time",
"symbol": "tr",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 9,
"max": 18,
"conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-off delay time",
"symbol": "td(off)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 25,
"max": 45,
"conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Fall time",
"symbol": "tf",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 9,
"max": 18,
"conditions": "VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Continuous source-drain diode current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 5.1,
"conditions": "TC = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Pulse diode forward current",
"symbol": "ISM",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 70,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Body diode voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 0.73,
"max": 1.1,
"conditions": "IS = 3 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Body diode reverse recovery time",
"symbol": "trr",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 19,
"max": 38,
"conditions": "IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Body diode reverse recovery charge",
"symbol": "Qrr",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 10,
"max": 20,
"conditions": "IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-source voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 30,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-source voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous drain current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 25.4,
"conditions": "TJ = 150 °C, TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous drain current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 20.2,
"conditions": "TJ = 150 °C, TC = 70 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous drain current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 16.8,
"conditions": "TJ = 150 °C, TA = 25 °C (notes b, c)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous drain current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 13.4,
"conditions": "TJ = 150 °C, TA = 70 °C (notes b, c)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed drain current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 70,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous source-drain diode current",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 5.1,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous source-drain diode current",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 2.2,
"conditions": "TA = 25 °C (notes b, c)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single pulse avalanche current",
"symbol": "IAS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 30,
"conditions": "L = 0.1 mH",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 45,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum power dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 5.7,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum power dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 3.6,
"conditions": "TC = 70 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum power dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 2.5,
"conditions": "TA = 25 °C (notes b, c)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum power dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 1.6,
"conditions": "TA = 70 °C (notes b, c)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating junction and storage temperature range",
"symbol": "TJ, Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum junction-to-ambient",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 39,
"max": 50,
"conditions": "t ≤ 10 s (notes b, d)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum junction-to-foot (drain)",
"symbol": "RthJF",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 18,
"max": 22,
"conditions": "Steady state",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum junction-to-ambient",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 85,
"conditions": "Steady state (note d)",
"source_page": 1,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"si4160dy-t1-ge3"
],
"discovery_pitch": "SI4160DY-T1-GE3 (Vishay Intertech) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"si4160dy-t1-ge3.kicad_sym",
"si4160dy-t1-ge3.kicad_mod",
"si4160dy-t1-ge3.glb",
"si4160dy-t1-ge3.step",
"si4160dy-t1-ge3.lbr",
"docs/hero.png",
"docs/si4160dy-t1-ge3-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"si4160dy-t1-ge3-hero.glb",
"si4160dy-t1-ge3-hero.overlay.json",
"si4160dy-t1-ge3-etched.glb"
],
"visibility": {
"public": true
}
}