component

SI4160DY-T1-GE3

Public Made by Adom

by adom

Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi4160dy-t1-ge3factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
si4160dy-t1-ge3 / README.md
History Download
Ray Publish 0.1.0 4a10cbf 4h ago

SI4160DY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4160DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, rated within the 30 V drain-source and ±20 V gate-source absolute maximum ratings.
2 S passive Source terminal of the N-channel MOSFET, rated within the 30 V drain-source and ±20 V gate-source absolute maximum ratings.
3 S passive Source terminal of the N-channel MOSFET, rated within the 30 V drain-source and ±20 V gate-source absolute maximum ratings.
4 G input Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±20 V per the absolute maximum ratings.
5 D passive Drain terminal of the N-channel MOSFET; continuous drain current is 25.4 A at TC = 25 °C and pulsed drain current is 70 A.
6 D passive Drain terminal of the N-channel MOSFET; continuous drain current is 25.4 A at TC = 25 °C and pulsed drain current is 70 A.
7 D passive Drain terminal of the N-channel MOSFET; continuous drain current is 25.4 A at TC = 25 °C and pulsed drain current is 70 A.
8 D passive Drain terminal of the N-channel MOSFET; continuous drain current is 25.4 A at TC = 25 °C and pulsed drain current is 70 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source threshold voltage VGS(th) 1 2.4 V VDS = VGS, ID = 250 µA 2
Drain-source breakdown voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current ID(on) 30 A VDS ≥ 5 V, VGS = 10 V 2
Drain-source on-state resistance RDS(on) 0.004 0.0049 Ω VGS = 10 V, ID = 15 A 2
Drain-source on-state resistance RDS(on) 0.0051 0.0063 Ω VGS = 4.5 V, ID = 10 A 2
Total gate charge Qg 36 54 nC VDS = 15 V, VGS = 10 V, ID = 10 A 2
Total gate charge Qg 16.8 25.5 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 2
Gate resistance Rg 0.2 0.85 1.7 Ω f = 1 MHz 2
Turn-on delay time td(on) 25 45 ns VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise time tr 16 30 ns VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 28 50 ns VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall time tf 12 24 ns VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-on delay time td(on) 10 20 ns VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise time tr 9 18 ns VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 25 45 ns VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall time tf 9 18 ns VDD = 15 V, RL = 1.5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous source-drain diode current IS 5.1 A TC = 25 °C 2
Pulse diode forward current ISM 70 A 2
Body diode voltage VSD 0.73 1.1 V IS = 3 A 2
Body diode reverse recovery time trr 19 38 ns IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 10 20 nC IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 2
Drain-source voltage VDS 30 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 25.4 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID 20.2 A TJ = 150 °C, TC = 70 °C 1
Continuous drain current ID 16.8 A TJ = 150 °C, TA = 25 °C (notes b, c) 1
Continuous drain current ID 13.4 A TJ = 150 °C, TA = 70 °C (notes b, c) 1
Pulsed drain current IDM 70 A 1
Continuous source-drain diode current IS 5.1 A TC = 25 °C 1
Continuous source-drain diode current IS 2.2 A TA = 25 °C (notes b, c) 1
Single pulse avalanche current IAS 30 A L = 0.1 mH 1
Avalanche energy EAS 45 mJ 1
Maximum power dissipation PD 5.7 W TC = 25 °C 1
Maximum power dissipation PD 3.6 W TC = 70 °C 1
Maximum power dissipation PD 2.5 W TA = 25 °C (notes b, c) 1
Maximum power dissipation PD 1.6 W TA = 70 °C (notes b, c) 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 39 50 °C/W t ≤ 10 s (notes b, d) 1
Maximum junction-to-foot (drain) RthJF 18 22 °C/W Steady state 1
Maximum junction-to-ambient RthJA 85 °C/W Steady state (note d) 1

CAD (KiCad official)

  • Symbol: SI4160DY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4160dy-t1-ge3-etched.step / si4160dy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4160dy-t1-ge3.step / si4160dy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 10c36e11b4a643a4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF