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SI4156DY-T1-GE3

Public Made by Adom

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Vishay Intertech Pre-ordered Chips, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI4156DY-T1-GE3

Vishay Intertech · Pre-ordered Chips · SO-8

SI4156DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; continuous source-drain diode current is rated 5 A at TC = 25 °C.
2 S passive Source terminal of the N-channel MOSFET; continuous source-drain diode current is rated 5 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET; continuous source-drain diode current is rated 5 A at TC = 25 °C.
4 G input Gate terminal; gate-source voltage is rated ±20 V.
5 D passive Drain terminal; drain-source voltage is rated 30 V and continuous drain current is 24 A at TC = 25 °C.
6 D passive Drain terminal; drain-source voltage is rated 30 V and continuous drain current is 24 A at TC = 25 °C.
7 D passive Drain terminal; drain-source voltage is rated 30 V and continuous drain current is 24 A at TC = 25 °C.
8 D passive Drain terminal; drain-source voltage is rated 30 V and continuous drain current is 24 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Communication Interface Chip/UART/485/232
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 24 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 19 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 15.7 A TA = 25 °C, surface mounted, t = 10 s 1
Continuous Drain Current ID 12.5 A TA = 70 °C, surface mounted, t = 10 s 1
Pulsed Drain Current IDM 70 A 1
Avalanche Current IAS 35 A L = 0.1 mH 1
Avalanche Energy EAS 61 mJ L = 0.1 mH 1
Continuous Source-Drain Diode Current IS 5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.1 A TA = 25 °C, surface mounted, t = 10 s 1
Maximum Power Dissipation PD 6 W TC = 25 °C 1
Maximum Power Dissipation PD 3.8 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C, surface mounted, t = 10 s 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C, surface mounted, t = 10 s 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C Peak temperature 1
Maximum Junction-to-Ambient RthJA 37 50 °C/W t ≤ 10 s, surface mounted 1
Maximum Junction-to-Foot (Drain) RthJF 17 21 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.15 2.2 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Drain-Source On-State Resistance RDS(on) 0.0048 0.006 Ω VGS = 10 V, ID = 15.7 A 2
Drain-Source On-State Resistance RDS(on) 0.0064 0.008 Ω VGS = 4.5 V, ID = 13.2 A 2
Gate Resistance Rg 0.2 1.2 2.4 Ω f = 1 MHz 2
Total Gate Charge Qg 28 42 nC VDS = 15 V, VGS = 10 V, ID = 19 A 2
Total Gate Charge Qg 12 21 nC VDS = 15 V, VGS = 4.5 V, ID = 19 A 2
Turn-On Delay Time td(on) 25 40 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 20 30 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 25 40 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 15 25 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 12 20 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 10 15 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.8 1.2 V IS = 10 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 25 50 ns IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 17 35 nC IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4156DY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4156dy-t1-ge3-etched.step / si4156dy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4156dy-t1-ge3.step / si4156dy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 3bd9380f2fea3094, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF