SI4124DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source of the N-channel MOSFET; continuous source-drain diode current is 4.5 A at TC = 25 °C.
2	S	passive	Source of the N-channel MOSFET, tied in parallel with pins 1 and 3.
3	S	passive	Source of the N-channel MOSFET, tied in parallel with pins 1 and 2.
4	G	input	Gate of the N-channel MOSFET; gate-source voltage limit is ±20 V with threshold of 1.0 to 3.0 V.
5	D	passive	Drain of the N-channel MOSFET; VDS is rated 40 V maximum.
6	D	passive	Drain of the N-channel MOSFET, tied in parallel with pins 5, 7 and 8.
7	D	passive	Drain of the N-channel MOSFET, tied in parallel with pins 5, 6 and 8.
8	D	passive	Drain of the N-channel MOSFET; continuous drain current is 18 A at TC = 25 °C.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			40	V	TA = 25 °C	1
Gate-Source Voltage	VGS	-20		20	V	TA = 25 °C	1
Continuous Drain Current	ID			18	A	TC = 25 °C, TJ = 150 °C	1
Continuous Drain Current	ID			13.5	A	TC = 70 °C, TJ = 150 °C	1
Continuous Drain Current	ID			12	A	TA = 25 °C, TJ = 150 °C (b, c)	1
Continuous Drain Current	ID			9.6	A	TA = 70 °C, TJ = 150 °C (b, c)	1
Pulsed Drain Current	IDM			50	A		1
Continuous Source-Drain Diode Current	IS			4.5	A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS			2.2	A	TA = 25 °C (b, c)	1
Single Pulse Avalanche Current	IAS			20	A	L = 0.1 mH	1
Avalanche Energy	EAS			20	mJ	L = 0.1 mH	1
Maximum Power Dissipation	PD			5	W	TC = 25 °C	1
Maximum Power Dissipation	PD			3.2	W	TC = 70 °C	1
Maximum Power Dissipation	PD			2.5	W	TA = 25 °C (b, c)	1
Maximum Power Dissipation	PD			1.6	W	TA = 70 °C (b, c)	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Junction-to-Ambient Thermal Resistance	RthJA		38	50	°C/W	t ≤ 10 s, surface mounted on 1" x 1" FR4	1
Junction-to-Foot (Drain) Thermal Resistance	RthJF		20	25	°C/W	Steady State	1
Drain-Source Breakdown Voltage	VDS	40			V	VGS = 0 V, ID = 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	1		3	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 40 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			10	µA	VDS = 40 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	30			A	VDS ≥ 5 V, VGS = 10 V	2
Gate Resistance	Rg	0.3	1.3	2.6	Ω	f = 1 MHz	2
Total Gate Charge	Qg		18	27	nC	VDS = 15 V, VGS = 10 V, ID = 10 A	2
Turn-On Delay Time	td(on)		14	25	ns	VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω	2
Rise Time	tr		12	24	ns	VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		19	35	ns	VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω	2
Fall Time	tf		9	18	ns	VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		8	16	ns	VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω	2
Rise Time	tr		10	20	ns	VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		16	30	ns	VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			4.5	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			50	A		2
Body Diode Voltage	VSD		0.76	1.1	V	IS = 3 A	2
Body Diode Reverse Recovery Time	trr		14	28	ns	IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		5	10	nC	IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Drain-Source On-State Resistance	RDS(on)		0.0038		Ω	VGS = 10 V, ID = 10 A	2
Drain-Source On-State Resistance	RDS(on)		0.0057		Ω	VGS = 4.5 V, ID = 7 A	2
Forward Transconductance	gfs		30		S	VDS = 15 V, ID = 10 A	2
Input Capacitance	Ciss		985		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
Output Capacitance	Coss		205		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
Reverse Transfer Capacitance	Crss		76		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
VDS Temperature Coefficient	ΔVDS/TJ		34		mV/°C	ID = 250 µA	2
VGS(th) Temperature Coefficient	ΔVGS(th)/TJ		-4.7		mV/°C	ID = 250 µA	2

CAD (KiCad official)

Symbol: SI4124DY-T1-E3-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: si4124dy-t1-e3-vb-etched.step / si4124dy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4124dy-t1-e3-vb.step / si4124dy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 e5902687807e8730, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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SI4124DY-T1-E3-VB

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