component

SI4100DY-T1-GE3

Public Made by Adom

by adom

Vishay Intertech MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorsi4100dy-t1-ge3factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
si4100dy-t1-ge3 / README.md
History Download
Ray Publish 0.1.0 f0d4afd 15d ago

SI4100DY-T1-GE3

Vishay Intertech · MOSFETs · SOIC-8

SI4100DY-T1-GE3 from Vishay Intertech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel 100-V TrenchFET MOSFET (SO-8 top view, pin 1).
2 S passive Source terminal of the N-channel 100-V TrenchFET MOSFET (SO-8 top view, pin 2).
3 S passive Source terminal of the N-channel 100-V TrenchFET MOSFET (SO-8 top view, pin 3).
4 G input Gate terminal of the MOSFET, with VGS rated at ±20 V maximum.
5 D passive Drain terminal, VDS rated at 100 V maximum; connected with pins 6, 7 and 8.
6 D passive Drain terminal, VDS rated at 100 V maximum; connected with pins 5, 7 and 8.
7 D passive Drain terminal, VDS rated at 100 V maximum; connected with pins 5, 6 and 8.
8 D passive Drain terminal, VDS rated at 100 V maximum; connected with pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOIC-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2 4.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ = 55 °C) IDSS 10 µA VDS = 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance (10 V) RDS(on) 0.051 0.063 Ω VGS = 10 V, ID = 4.4 A 2
Drain-Source On-State Resistance (6 V) RDS(on) 0.069 0.084 Ω VGS = 6 V, ID = 3.8 A 2
Total Gate Charge (10 V) Qg 13.5 20 nC VDS = 50 V, VGS = 10 V, ID = 4.4 A 2
Total Gate Charge (6 V) Qg 9 13.5 nC VDS = 50 V, VGS = 6 V, ID = 4.4 A 2
Turn-On Delay Time (VGEN 6 V) td(on) 15 25 ns VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω 2
Rise Time (VGEN 6 V) tr 12 20 ns VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN 6 V) td(off) 12 20 ns VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω 2
Fall Time (VGEN 6 V) tf 10 15 ns VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN 10 V) td(on) 10 15 ns VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time (VGEN 10 V) tr 12 20 ns VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN 10 V) td(off) 15 25 ns VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGEN 10 V) tf 10 15 ns VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 5 A TC = 25 °C 2
Pulse Diode Forward Current ISM 20 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 3.5 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 45 70 ns IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 80 120 nC IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ 120 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -9 mV/°C ID = 250 µA 2
Forward Transconductance gfs 10 S VDS = 15 V, ID = 4.4 A 2
Input Capacitance Ciss 600 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 90 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 50 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 3 nC 2
Gate-Drain Charge Qgd 4.6 nC 2
Gate Resistance Rg 1 Ω f = 1 MHz 2
Drain-Source Voltage VDS 100 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 6.8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 5.4 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 4.4 A TJ = 150 °C, TA = 25 °C (a, b) 1
Continuous Drain Current ID 3.5 A TJ = 150 °C, TA = 70 °C (a, b) 1
Pulsed Drain Current IDM 20 A 1
Continuous Source-Drain Diode Current IS 5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.1 A TA = 25 °C (a, b) 1
Single Avalanche Current IAS 19 A L = 0.1 mH 1
Single Avalanche Energy EAS 18 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 6 W TC = 25 °C 1
Maximum Power Dissipation PD 3.8 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C (a, b) 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C (a, b) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 37 50 °C/W t ≤ 10 s, surface mounted on 1" x 1" FR4 board 1
Maximum Junction-to-Foot (Drain) RthJF 17 21 °C/W Steady State 1

CAD (KiCad official)

  • Symbol: SI4100DY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: si4100dy-t1-ge3-etched.step / si4100dy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4100dy-t1-ge3.step / si4100dy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 05048fb130d6c41f, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF