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SI4056DY-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI4056DY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4056DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied with pins 2 and 3 in the SO-8 single configuration.
2 S passive Source of the N-channel MOSFET, tied with pins 1 and 3 in the SO-8 single configuration.
3 S passive Source of the N-channel MOSFET, tied with pins 1 and 2 in the SO-8 single configuration.
4 G input Gate of the N-channel MOSFET; gate-source voltage limit is ±20 V.
5 D passive Drain of the N-channel MOSFET, tied with pins 6, 7 and 8; VDS rated 100 V.
6 D passive Drain of the N-channel MOSFET, tied with pins 5, 7 and 8; VDS rated 100 V.
7 D passive Drain of the N-channel MOSFET, tied with pins 5, 6 and 8; VDS rated 100 V.
8 D passive Drain of the N-channel MOSFET, tied with pins 5, 6 and 7; VDS rated 100 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 100 V TA = 25 °C 1
Gate-source voltage VGS -20 20 V TA = 25 °C 1
Continuous drain current ID 11.1 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID 8.8 A TJ = 150 °C, TC = 70 °C 1
Continuous drain current ID 7.3 A TJ = 150 °C, TA = 25 °C (b, c) 1
Continuous drain current ID 5.8 A TJ = 150 °C, TA = 70 °C (b, c) 1
Pulsed drain current IDM 70 A t = 300 μs 1
Continuous source-drain diode current IS 5.1 A TC = 25 °C 1
Continuous source-drain diode current IS 2.2 A TA = 25 °C (b, c) 1
Single pulse avalanche current IAS 15 A L = 0.1 mH 1
Avalanche energy EAS 11.2 mJ L = 0.1 mH 1
Maximum power dissipation PD 5.7 W TC = 25 °C 1
Maximum power dissipation PD 3.6 W TC = 70 °C 1
Maximum power dissipation PD 2.5 W TA = 25 °C (b, c) 1
Maximum power dissipation PD 1.6 W TA = 70 °C (b, c) 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 35 50 °C/W t ≤ 10 s, surface mounted on 1" x 1" FR4 1
Maximum junction-to-foot (drain) RthJF 18 22 °C/W Steady state 1
Drain-source breakdown voltage VDS 100 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 1.5 2.8 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 100 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 10 μA VDS = 100 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current ID(on) 30 A VDS ≥ 5 V, VGS = 10 V 2
Drain-source on-state resistance RDS(on) 0.017 0.023 Ω VGS = 10 V, ID = 15 A 2
Drain-source on-state resistance RDS(on) 0.018 0.024 Ω VGS = 7.5 V, ID = 12 A 2
Drain-source on-state resistance RDS(on) 0.022 0.031 Ω VGS = 4.5 V, ID = 10 A 2
Total gate charge Qg 19.6 29.5 nC VDS = 50 V, VGS = 10 V, ID = 10 A 2
Total gate charge Qg 9.7 15 nC VDS = 50 V, VGS = 4.5 V, ID = 10 A 2
Output charge Qoss 26.2 40 nC VDS = 50 V, VGS = 0 V 2
Gate resistance Rg 0.2 0.85 1.7 Ω f = 1 MHz 2
Turn-on delay time td(on) 13 26 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω 2
Rise time tr 14 28 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 19 38 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω 2
Fall time tf 10 20 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω 2
Turn-on delay time td(on) 11 22 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise time tr 10 20 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 20 40 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall time tf 9 18 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous source-drain diode current IS 5.1 A TC = 25 °C 2
Pulse diode forward current ISM 70 A 2
Body diode voltage VSD 0.77 1.1 V IS = 4 A 2
Body diode reverse recovery time trr 34 65 ns IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 34 65 nC IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C 2
VDS temperature coefficient ΔVDS/TJ 67 mV/°C ID = 250 μA 2
VGS(th) temperature coefficient ΔVGS(th)/TJ -5 mV/°C ID = 250 μA 2
Forward transconductance gfs 26 S VDS = 15 V, ID = 15 A 2
Input capacitance Ciss 900 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Output capacitance Coss 340 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Reverse transfer capacitance Crss 31 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Gate-source charge Qgs 2.8 nC VDS = 50 V, VGS = 10 V, ID = 10 A 2
Gate-drain charge Qgd 4.3 nC VDS = 50 V, VGS = 10 V, ID = 10 A 2

CAD (KiCad official)

  • Symbol: SI4056DY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4056dy-t1-ge3-etched.step / si4056dy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4056dy-t1-ge3.step / si4056dy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 43331bb35a03d2e0, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF