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Ray Set visibility: public f877e05 13h ago
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{
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  "slug": "si3590dv-t1-e3",
  "title": "SI3590DV-T1-E3",
  "brief": "Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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    "manufacturer": "Vishay Intertech",
    "package": "TSOP-6",
    "pin_count": 6,
    "category": "Transistors",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/31947936c16503ed4061c1568914349f.pdf",
    "parts": {
      "symbol": "si3590dv-t1-e3.kicad_sym",
      "footprint": "si3590dv-t1-e3.kicad_mod",
      "model_3d": "si3590dv-t1-e3-hero.glb",
      "model_3d_plain": "si3590dv-t1-e3-etched.glb",
      "model_3d_step": "si3590dv-t1-e3-etched.step",
      "model_3d_step_plain": "si3590dv-t1-e3.step",
      "lbr": "si3590dv-t1-e3.lbr"
    },
    "distributor_links": {
      "lcsc": "C727597",
      "digikey": "SI3590DV-T1-E3TR-ND",
      "mouser": "781-SI3590DV-T1-E3"
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    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
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      "mouser": {
        "pn": "781-SI3590DV-T1-E3",
        "status": "found",
        "lifecycle": "End of Life"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G1",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, with VGS rated ±12 V maximum and threshold of 0.6 V to 1.5 V at 250 µA."
      },
      {
        "number": "2",
        "name": "S2",
        "type": "passive",
        "description": "Source of the P-channel MOSFET, rated VDS -30 V with continuous drain current of -2 A (10 s) at TA = 25 °C."
      },
      {
        "number": "3",
        "name": "G2",
        "type": "input",
        "description": "Gate of the P-channel MOSFET, with VGS rated ±12 V maximum and threshold of -0.6 V to -1.5 V at -250 µA."
      },
      {
        "number": "4",
        "name": "D2",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, rated VDS -30 V with pulsed drain current IDM of -8 A."
      },
      {
        "number": "5",
        "name": "S1",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, rated VDS 30 V with continuous drain current of 3 A (10 s) at TA = 25 °C."
      },
      {
        "number": "6",
        "name": "D1",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, rated VDS 30 V with pulsed drain current IDM of 8 A."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin assignments were read from the flattened text of the page 1 Top View diagram (1 G1, 2 S2, 3 G2, ; The AN823 application note on page 10 says pins 1, 2, 5 and 6 are drain pins tied together. That des; MOSFET pin types are a judgment call. The gates are set as input, and sources and drains as passive,"
        ],
        "pages_sent": 13,
        "cost_usd": 0.1188,
        "at": "2026-10-27T00:44:54"
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        "pages": 13,
        "sha256": "ca3ae2c3859cfa71",
        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
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        "described": 6,
        "cites_pages": true,
        "refuses_to_fabricate": true
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    "viewers": {
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      "footprint": "viewers/footprint.html"
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
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        "checked": "2026-10-27",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "si3590dv-t1-e3-etched.step",
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
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        "sha256": "687b617216b9208b40da66f0f4cbfad7cd0fe01f9ffab1f1861cad47f1d56493",
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        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  "metadata": {
    "specs": {
      "Manufacturer": "Vishay Intertech",
      "Package": "TSOP-6",
      "Category": "Transistors",
      "Pins": "6"
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    "appearance": {
      "contacts": {
        "quote": "pins 1,2,5, and 6. The copper plane connects the drain pins",
        "page": 10,
        "doc": "ds.pdf",
        "material": "copper"
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      "version": 1,
      "datasheet_sha256": "ca3ae2c3859cfa711ae4b18d6075717bf3d3f7a277fbbcdc9ac779d4fb675d4e"
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          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage P-Ch",
          "symbol": "VGS(th)",
          "kind": "electrical",
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          "min": -0.6,
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          "conditions": "VDS = VGS, ID = -250 μA",
          "source_page": 2,
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        },
        {
          "name": "Gate-body leakage N-Ch",
          "symbol": "IGSS",
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          "conditions": "VDS = 0 V, VGS = ± 12 V",
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        {
          "name": "Zero gate voltage drain current N-Ch hot",
          "symbol": "IDSS",
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          "conditions": "VDS = 30 V, VGS = 0 V, TJ = 55 °C",
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          "name": "Zero gate voltage drain current P-Ch hot",
          "symbol": "IDSS",
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          "name": "On-state drain current N-Ch",
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          "name": "Diode forward voltage P-Ch",
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        {
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          "source_page": 2,
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          "name": "Rise time N-Ch",
          "symbol": "tr",
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          "conditions": "VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Rise time P-Ch",
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          "max": 23,
          "conditions": "VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Turn-off delay time P-Ch",
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          "min": null,
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          "conditions": "VDD = -15 V, RL = 15 Ω, VGEN = -10 V, Rg = 6 Ω",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Fall time N-Ch",
          "symbol": "tf",
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          "max": 12,
          "conditions": "VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω",
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        {
          "name": "Fall time P-Ch",
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          "conditions": "VDD = -15 V, RL = 15 Ω, VGEN = -10 V, Rg = 6 Ω",
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        {
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          "conditions": "IF = 1.05 A, di/dt = 100 A/μs",
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        {
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        {
          "name": "Drain-source voltage P-Ch",
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          "conditions": "TA = 25 °C, both channels",
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          "conditions": "TJ = 150 °C, TA = 25 °C, 10 s",
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        {
          "name": "Continuous drain current P-Ch 10 s",
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          "min": null,
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          "conditions": "TJ = 150 °C, TA = 25 °C, 10 s",
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          "source": "datasheet"
        },
        {
          "name": "Continuous drain current P-Ch steady state",
          "symbol": "ID",
          "kind": "absolute_maximum",
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          "min": null,
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          "max": -1.7,
          "conditions": "TJ = 150 °C, TA = 25 °C, steady state",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed drain current N-Ch",
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        {
          "name": "Pulsed drain current P-Ch",
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        {
          "name": "Continuous source current N-Ch 10 s",
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          "conditions": "diode conduction, 10 s",
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        {
          "name": "Continuous source current N-Ch steady state",
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